Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources

Gespeichert in:

Autor*in:	Shen, Jingyu [verfasserIn] Li, Wei Zhang, Yuanbin

Format:	Artikel
Sprache:	Englisch

Erschienen:	2017

Übergeordnetes Werk:	Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, (2017), Seite 1-1
Übergeordnetes Werk:	year:2017 ; pages:1-1

Links:	Volltext

DOI / URN:	10.1109/TNS.2017.2655302

Katalog-ID:	OLC1987784510

Internformat


LEADER	01000caa a2200265 4500
001	OLC1987784510
003	DE-627
005	20230525173942.0
007	tu
008	170207s2017 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1109/TNS.2017.2655302 \|2 doi
028	5	2	\|a PQ20170501
035			\|a (DE-627)OLC1987784510
035			\|a (DE-599)GBVOLC1987784510
035			\|a (PRQ)crossref_primary_10_1109_TNS_2017_26553020
035			\|a (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 620 \|q DNB
100	1		\|a Shen, Jingyu \|e verfasserin \|4 aut
245	1	0	\|a Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
264		1	\|c 2017
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Li, Wei \|4 oth
700	1		\|a Zhang, Yuanbin \|4 oth
773	0	8	\|i Enthalten in \|t IEEE transactions on nuclear science \|d New York, NY : IEEE, 1963 \|g (2017), Seite 1-1 \|w (DE-627)129547352 \|w (DE-600)218510-6 \|w (DE-576)014998238 \|x 0018-9499 \|7 nnns
773	1	8	\|g year:2017 \|g pages:1-1
856	4	1	\|u http://dx.doi.org/10.1109/TNS.2017.2655302 \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_70
951			\|a AR
952			\|j 2017 \|h 1-1

Indexfelder

author_variant	j s js
matchkey_str	article:00189499:2017----::sesetfiefcofammrcludrlcrnrync6
hierarchy_sort_str	2017
publishDate	2017
allfields	10.1109/TNS.2017.2655302 doi PQ20170501 (DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 (2017), Seite 1-1 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns year:2017 pages:1-1 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 2017 1-1
spelling	10.1109/TNS.2017.2655302 doi PQ20170501 (DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 (2017), Seite 1-1 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns year:2017 pages:1-1 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 2017 1-1
allfields_unstemmed	10.1109/TNS.2017.2655302 doi PQ20170501 (DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 (2017), Seite 1-1 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns year:2017 pages:1-1 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 2017 1-1
allfieldsGer	10.1109/TNS.2017.2655302 doi PQ20170501 (DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 (2017), Seite 1-1 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns year:2017 pages:1-1 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 2017 1-1
allfieldsSound	10.1109/TNS.2017.2655302 doi PQ20170501 (DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 (2017), Seite 1-1 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns year:2017 pages:1-1 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 2017 1-1
language	English
source	Enthalten in IEEE transactions on nuclear science (2017), Seite 1-1 year:2017 pages:1-1
sourceStr	Enthalten in IEEE transactions on nuclear science (2017), Seite 1-1 year:2017 pages:1-1
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE transactions on nuclear science
authorswithroles_txt_mv	Shen, Jingyu @@aut@@ Li, Wei @@oth@@ Zhang, Yuanbin @@oth@@
publishDateDaySort_date	2017-01-01T00:00:00Z
hierarchy_top_id	129547352
dewey-sort	3620
id	OLC1987784510
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1987784510</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230525173942.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170207s2017 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TNS.2017.2655302</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170501</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1987784510</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1987784510</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)crossref_primary_10_1109_TNS_2017_26553020</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shen, Jingyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Wei</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Yuanbin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on nuclear science</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">(2017), Seite 1-1</subfield><subfield code="w">(DE-627)129547352</subfield><subfield code="w">(DE-600)218510-6</subfield><subfield code="w">(DE-576)014998238</subfield><subfield code="x">0018-9499</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">year:2017</subfield><subfield code="g">pages:1-1</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TNS.2017.2655302</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="j">2017</subfield><subfield code="h">1-1</subfield></datafield></record></collection>
author	Shen, Jingyu
spellingShingle	Shen, Jingyu ddc 620 Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
authorStr	Shen, Jingyu
ppnlink_with_tag_str_mv	@@773@@(DE-627)129547352
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0018-9499
topic_title	620 DNB Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
topic	ddc 620
topic_unstemmed	ddc 620
topic_browse	ddc 620
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	w l wl y z yz
hierarchy_parent_title	IEEE transactions on nuclear science
hierarchy_parent_id	129547352
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE transactions on nuclear science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129547352 (DE-600)218510-6 (DE-576)014998238
title	Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
ctrlnum	(DE-627)OLC1987784510 (DE-599)GBVOLC1987784510 (PRQ)crossref_primary_10_1109_TNS_2017_26553020 (KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron
title_full	Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
author_sort	Shen, Jingyu
journal	IEEE transactions on nuclear science
journalStr	IEEE transactions on nuclear science
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2017
contenttype_str_mv	txt
container_start_page	1
author_browse	Shen, Jingyu
class	620 DNB
format_se	Aufsätze
author-letter	Shen, Jingyu
doi_str_mv	10.1109/TNS.2017.2655302
dewey-full	620
title_sort	assessment of tid effect of fram memory cell under electron, x-ray and co-60 ? ray radiation sources
title_auth	Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70
title_short	Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources
url	http://dx.doi.org/10.1109/TNS.2017.2655302
remote_bool	false
author2	Li, Wei Zhang, Yuanbin
author2Str	Li, Wei Zhang, Yuanbin
ppnlink	129547352
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
doi_str	10.1109/TNS.2017.2655302
up_date	2024-07-03T15:18:36.454Z
_version_	1803571603914620928
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1987784510</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230525173942.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170207s2017 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TNS.2017.2655302</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170501</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1987784510</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1987784510</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)crossref_primary_10_1109_TNS_2017_26553020</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0054996720170000000000000001assessmentoftideffectofframmemorycellunderelectron</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shen, Jingyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Assessment of TID Effect of FRAM Memory Cell under Electron, X-ray and Co-60 ? Ray Radiation Sources</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Wei</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Yuanbin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on nuclear science</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">(2017), Seite 1-1</subfield><subfield code="w">(DE-627)129547352</subfield><subfield code="w">(DE-600)218510-6</subfield><subfield code="w">(DE-576)014998238</subfield><subfield code="x">0018-9499</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">year:2017</subfield><subfield code="g">pages:1-1</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TNS.2017.2655302</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="j">2017</subfield><subfield code="h">1-1</subfield></datafield></record></collection>
score	7.402337

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