An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions
Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junc...
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| Autor*in: |
Jain, Shubham [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 64(2017), 2, Seite 507-514 |
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| Übergeordnetes Werk: |
volume:64 ; year:2017 ; number:2 ; pages:507-514 |
| Links: |
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| DOI / URN: |
10.1109/TED.2016.2642995 |
|---|
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OLC1988218403 |
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| 520 | |a Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. | ||
| 650 | 4 | |a forward bias | |
| 650 | 4 | |a conductance | |
| 650 | 4 | |a analytical model | |
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| 650 | 4 | |a current boundary conditions | |
| 650 | 4 | |a semiconductor junction | |
| 650 | 4 | |a current spreading | |
| 650 | 4 | |a 3-D flow | |
| 650 | 4 | |a capacitance | |
| 650 | 4 | |a admittance | |
| 650 | 4 | |a p-n junction | |
| 700 | 1 | |a Gurugubelli, Vijaya Kumar |4 oth | |
| 700 | 1 | |a Karmalkar, Shreepad |4 oth | |
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10.1109/TED.2016.2642995 doi PQ20170206 (DE-627)OLC1988218403 (DE-599)GBVOLC1988218403 (PRQ)i586-d53e767fb896c5a3dd53efb88aa4a60f26c6999e36a1a451fedf2c18d8020ad60 (KEY)0079428720170000064000200507analyticalmodelofthefrequencydependent3dcurrentspr DE-627 ger DE-627 rakwb eng 620 DNB Jain, Shubham verfasserin aut An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. forward bias conductance analytical model ac equivalent circuit current boundary conditions semiconductor junction current spreading 3-D flow capacitance admittance p-n junction Gurugubelli, Vijaya Kumar oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 64(2017), 2, Seite 507-514 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:64 year:2017 number:2 pages:507-514 http://dx.doi.org/10.1109/TED.2016.2642995 Volltext http://ieeexplore.ieee.org/document/7828163 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 64 2017 2 507-514 |
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10.1109/TED.2016.2642995 doi PQ20170206 (DE-627)OLC1988218403 (DE-599)GBVOLC1988218403 (PRQ)i586-d53e767fb896c5a3dd53efb88aa4a60f26c6999e36a1a451fedf2c18d8020ad60 (KEY)0079428720170000064000200507analyticalmodelofthefrequencydependent3dcurrentspr DE-627 ger DE-627 rakwb eng 620 DNB Jain, Shubham verfasserin aut An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. forward bias conductance analytical model ac equivalent circuit current boundary conditions semiconductor junction current spreading 3-D flow capacitance admittance p-n junction Gurugubelli, Vijaya Kumar oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 64(2017), 2, Seite 507-514 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:64 year:2017 number:2 pages:507-514 http://dx.doi.org/10.1109/TED.2016.2642995 Volltext http://ieeexplore.ieee.org/document/7828163 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 64 2017 2 507-514 |
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10.1109/TED.2016.2642995 doi PQ20170206 (DE-627)OLC1988218403 (DE-599)GBVOLC1988218403 (PRQ)i586-d53e767fb896c5a3dd53efb88aa4a60f26c6999e36a1a451fedf2c18d8020ad60 (KEY)0079428720170000064000200507analyticalmodelofthefrequencydependent3dcurrentspr DE-627 ger DE-627 rakwb eng 620 DNB Jain, Shubham verfasserin aut An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. forward bias conductance analytical model ac equivalent circuit current boundary conditions semiconductor junction current spreading 3-D flow capacitance admittance p-n junction Gurugubelli, Vijaya Kumar oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 64(2017), 2, Seite 507-514 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:64 year:2017 number:2 pages:507-514 http://dx.doi.org/10.1109/TED.2016.2642995 Volltext http://ieeexplore.ieee.org/document/7828163 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 64 2017 2 507-514 |
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Jain, Shubham |
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10.1109/TED.2016.2642995 |
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620 |
| title_sort |
analytical model of the frequency dependent 3-d current spreading in forward biased shallow rectangular p-n junctions |
| title_auth |
An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions |
| abstract |
Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. |
| abstractGer |
Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. |
| abstract_unstemmed |
Recently, we presented an analytical model of the frequency-dependent spreading of the small-signal minority carrier flow in forward biased shallow p-n junctions, having stripe and circular geometries and an ohmic bottom contact. This paper extends this approach to model a practical rectangular junction, which could be eccentric, have rounded corners and have an HI-LO junction characterized by a finite surface recombination velocity at the bottom. The current spreading is expressed in terms of the junction length and width, lateral and vertical extent beyond the junction, diffusion length, lifetime, surface recombination velocity, and frequency. It is shown that the spreading in a circular junction approximates that in a square junction of the same area, and the spreading in the direction of a side, which is more than four times the diffusion length can be neglected. The model is validated using TCAD simulation. |
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| title_short |
An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions |
| url |
http://dx.doi.org/10.1109/TED.2016.2642995 http://ieeexplore.ieee.org/document/7828163 |
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Gurugubelli, Vijaya Kumar Karmalkar, Shreepad |
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| up_date |
2024-07-03T17:01:53.520Z |
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