Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films
Superior piezoelectric properties of lead-based perovskite type solid solution systems such as PLZT, having compositions near morphotropic phase boundary (MPB) make them ideal candidates for MEMS. The dielectric and piezoelectric characteristics in such perovskite based thin films are related to the...
Ausführliche Beschreibung
Autor*in: |
Priya, S. Laxmi [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2016 |
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Rechteinformationen: |
Nutzungsrecht: © 2016 Taylor & Francis Group, LLC 2016 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Integrated ferroelectrics - Philadelphia, PA : Taylor & Francis, 1992, 176(2016), 1, Seite 210-219 |
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Übergeordnetes Werk: |
volume:176 ; year:2016 ; number:1 ; pages:210-219 |
Links: |
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DOI / URN: |
10.1080/10584587.2016.1252648 |
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Katalog-ID: |
OLC1989402216 |
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10.1080/10584587.2016.1252648 doi PQ20170301 (DE-627)OLC1989402216 (DE-599)GBVOLC1989402216 (PRQ)c1662-2938a3996d5877fc8aa6cc51b594ec3dbdc80c079811d818ca1fe82588e96c0f0 (KEY)0218424920160000176000100210improvedtransversepiezoelectricpropertiesin110orie DE-627 ger DE-627 rakwb eng 620 DNB Priya, S. Laxmi verfasserin aut Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Superior piezoelectric properties of lead-based perovskite type solid solution systems such as PLZT, having compositions near morphotropic phase boundary (MPB) make them ideal candidates for MEMS. The dielectric and piezoelectric characteristics in such perovskite based thin films are related to their structure and texture. In this study, we report the influence of aliovalent B-site acceptor dopants (Fe 3+ , Cu 2+ and Mn 3+ ) on the structure, dielectric and piezoelectric properties of {110}- preferentially oriented PLZT (8/65/35) thin films. Thin films having a thickness of 2.0 µm were prepared on silicon substrates (111) Pt/Ti/SiO 2 /Si by Sol-gel spin coating technique. The preferential crystallographic orientation and crystalline phase formation in the thin films were analysed by X-ray diffraction and Raman spectroscopy respectively. The improved transverse piezoelectric coefficient, e 31,f and electric field induced bipolar strain characteristics of the acceptor doped PLZT films have been correlated with their crystal structure. Mechanism for higher bipolar strain in Cu 2+ and Mn 3+ doped PLZT films have also been studied and are reported. Nutzungsrecht: © 2016 Taylor & Francis Group, LLC 2016 Piezoelectric thin films thin film texture domains Dielectric properties Perovskite Thin films Kumar, V oth Nishio, Shogo oth Kanno, Isaku oth Enthalten in Integrated ferroelectrics Philadelphia, PA : Taylor & Francis, 1992 176(2016), 1, Seite 210-219 (DE-627)16567475X (DE-600)1160073-1 (DE-576)045286442 1058-4587 nnns volume:176 year:2016 number:1 pages:210-219 http://dx.doi.org/10.1080/10584587.2016.1252648 Volltext http://www.tandfonline.com/doi/abs/10.1080/10584587.2016.1252648 http://search.proquest.com/docview/1848852604 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 176 2016 1 210-219 |
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Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films |
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Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films |
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Priya, S. Laxmi |
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Integrated ferroelectrics |
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10.1080/10584587.2016.1252648 |
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improved transverse piezoelectric properties in {110}-oriented b-site acceptor doped plzt (8/65/35) thin films |
title_auth |
Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films |
abstract |
Superior piezoelectric properties of lead-based perovskite type solid solution systems such as PLZT, having compositions near morphotropic phase boundary (MPB) make them ideal candidates for MEMS. The dielectric and piezoelectric characteristics in such perovskite based thin films are related to their structure and texture. In this study, we report the influence of aliovalent B-site acceptor dopants (Fe 3+ , Cu 2+ and Mn 3+ ) on the structure, dielectric and piezoelectric properties of {110}- preferentially oriented PLZT (8/65/35) thin films. Thin films having a thickness of 2.0 µm were prepared on silicon substrates (111) Pt/Ti/SiO 2 /Si by Sol-gel spin coating technique. The preferential crystallographic orientation and crystalline phase formation in the thin films were analysed by X-ray diffraction and Raman spectroscopy respectively. The improved transverse piezoelectric coefficient, e 31,f and electric field induced bipolar strain characteristics of the acceptor doped PLZT films have been correlated with their crystal structure. Mechanism for higher bipolar strain in Cu 2+ and Mn 3+ doped PLZT films have also been studied and are reported. |
abstractGer |
Superior piezoelectric properties of lead-based perovskite type solid solution systems such as PLZT, having compositions near morphotropic phase boundary (MPB) make them ideal candidates for MEMS. The dielectric and piezoelectric characteristics in such perovskite based thin films are related to their structure and texture. In this study, we report the influence of aliovalent B-site acceptor dopants (Fe 3+ , Cu 2+ and Mn 3+ ) on the structure, dielectric and piezoelectric properties of {110}- preferentially oriented PLZT (8/65/35) thin films. Thin films having a thickness of 2.0 µm were prepared on silicon substrates (111) Pt/Ti/SiO 2 /Si by Sol-gel spin coating technique. The preferential crystallographic orientation and crystalline phase formation in the thin films were analysed by X-ray diffraction and Raman spectroscopy respectively. The improved transverse piezoelectric coefficient, e 31,f and electric field induced bipolar strain characteristics of the acceptor doped PLZT films have been correlated with their crystal structure. Mechanism for higher bipolar strain in Cu 2+ and Mn 3+ doped PLZT films have also been studied and are reported. |
abstract_unstemmed |
Superior piezoelectric properties of lead-based perovskite type solid solution systems such as PLZT, having compositions near morphotropic phase boundary (MPB) make them ideal candidates for MEMS. The dielectric and piezoelectric characteristics in such perovskite based thin films are related to their structure and texture. In this study, we report the influence of aliovalent B-site acceptor dopants (Fe 3+ , Cu 2+ and Mn 3+ ) on the structure, dielectric and piezoelectric properties of {110}- preferentially oriented PLZT (8/65/35) thin films. Thin films having a thickness of 2.0 µm were prepared on silicon substrates (111) Pt/Ti/SiO 2 /Si by Sol-gel spin coating technique. The preferential crystallographic orientation and crystalline phase formation in the thin films were analysed by X-ray diffraction and Raman spectroscopy respectively. The improved transverse piezoelectric coefficient, e 31,f and electric field induced bipolar strain characteristics of the acceptor doped PLZT films have been correlated with their crystal structure. Mechanism for higher bipolar strain in Cu 2+ and Mn 3+ doped PLZT films have also been studied and are reported. |
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title_short |
Improved transverse piezoelectric properties in {110}-oriented B-site acceptor doped PLZT (8/65/35) thin films |
url |
http://dx.doi.org/10.1080/10584587.2016.1252648 http://www.tandfonline.com/doi/abs/10.1080/10584587.2016.1252648 http://search.proquest.com/docview/1848852604 |
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Kumar, V Nishio, Shogo Kanno, Isaku |
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