Cold sintering process: A new era for ceramic packaging and microwave device development
Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Guo, Jing [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © 2016 The American Ceramic Society |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the American Ceramic Society - Malden [u.a.] : Blackwell Publishing, 1918, 100(2017), 2, Seite 669-677 |
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| Übergeordnetes Werk: |
volume:100 ; year:2017 ; number:2 ; pages:669-677 |
| Links: |
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| DOI / URN: |
10.1111/jace.14603 |
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| 520 | |a Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. | ||
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| 700 | 1 | |a Baker, Amanda L |4 oth | |
| 700 | 1 | |a Guo, Hanzheng |4 oth | |
| 700 | 1 | |a Lanagan, Michael |4 oth | |
| 700 | 1 | |a Randall, Clive A |4 oth | |
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10.1111/jace.14603 doi PQ20170301 (DE-627)OLC1990901662 (DE-599)GBVOLC1990901662 (PRQ)c1293-e3ca7c0523a27db3b5789579ed67482482f57ad0da0e218f36406d3674944d1c0 (KEY)0108608120170000100000200669coldsinteringprocessaneweraforceramicpackagingandm DE-627 ger DE-627 rakwb eng 660 DNB Guo, Jing verfasserin aut Cold sintering process: A new era for ceramic packaging and microwave device development 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. Nutzungsrecht: © 2016 The American Ceramic Society ceramic‐polymer composites ceramics co‐fired ceramics cold sintering process microwave dielectric materials Baker, Amanda L oth Guo, Hanzheng oth Lanagan, Michael oth Randall, Clive A oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 2, Seite 669-677 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:2 pages:669-677 http://dx.doi.org/10.1111/jace.14603 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.14603/abstract http://search.proquest.com/docview/1867883440 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 2 669-677 |
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10.1111/jace.14603 doi PQ20170301 (DE-627)OLC1990901662 (DE-599)GBVOLC1990901662 (PRQ)c1293-e3ca7c0523a27db3b5789579ed67482482f57ad0da0e218f36406d3674944d1c0 (KEY)0108608120170000100000200669coldsinteringprocessaneweraforceramicpackagingandm DE-627 ger DE-627 rakwb eng 660 DNB Guo, Jing verfasserin aut Cold sintering process: A new era for ceramic packaging and microwave device development 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. Nutzungsrecht: © 2016 The American Ceramic Society ceramic‐polymer composites ceramics co‐fired ceramics cold sintering process microwave dielectric materials Baker, Amanda L oth Guo, Hanzheng oth Lanagan, Michael oth Randall, Clive A oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 2, Seite 669-677 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:2 pages:669-677 http://dx.doi.org/10.1111/jace.14603 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.14603/abstract http://search.proquest.com/docview/1867883440 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 2 669-677 |
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10.1111/jace.14603 doi PQ20170301 (DE-627)OLC1990901662 (DE-599)GBVOLC1990901662 (PRQ)c1293-e3ca7c0523a27db3b5789579ed67482482f57ad0da0e218f36406d3674944d1c0 (KEY)0108608120170000100000200669coldsinteringprocessaneweraforceramicpackagingandm DE-627 ger DE-627 rakwb eng 660 DNB Guo, Jing verfasserin aut Cold sintering process: A new era for ceramic packaging and microwave device development 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. Nutzungsrecht: © 2016 The American Ceramic Society ceramic‐polymer composites ceramics co‐fired ceramics cold sintering process microwave dielectric materials Baker, Amanda L oth Guo, Hanzheng oth Lanagan, Michael oth Randall, Clive A oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 2, Seite 669-677 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:2 pages:669-677 http://dx.doi.org/10.1111/jace.14603 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.14603/abstract http://search.proquest.com/docview/1867883440 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 2 669-677 |
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10.1111/jace.14603 doi PQ20170301 (DE-627)OLC1990901662 (DE-599)GBVOLC1990901662 (PRQ)c1293-e3ca7c0523a27db3b5789579ed67482482f57ad0da0e218f36406d3674944d1c0 (KEY)0108608120170000100000200669coldsinteringprocessaneweraforceramicpackagingandm DE-627 ger DE-627 rakwb eng 660 DNB Guo, Jing verfasserin aut Cold sintering process: A new era for ceramic packaging and microwave device development 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. Nutzungsrecht: © 2016 The American Ceramic Society ceramic‐polymer composites ceramics co‐fired ceramics cold sintering process microwave dielectric materials Baker, Amanda L oth Guo, Hanzheng oth Lanagan, Michael oth Randall, Clive A oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 2, Seite 669-677 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:2 pages:669-677 http://dx.doi.org/10.1111/jace.14603 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.14603/abstract http://search.proquest.com/docview/1867883440 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 2 669-677 |
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10.1111/jace.14603 doi PQ20170301 (DE-627)OLC1990901662 (DE-599)GBVOLC1990901662 (PRQ)c1293-e3ca7c0523a27db3b5789579ed67482482f57ad0da0e218f36406d3674944d1c0 (KEY)0108608120170000100000200669coldsinteringprocessaneweraforceramicpackagingandm DE-627 ger DE-627 rakwb eng 660 DNB Guo, Jing verfasserin aut Cold sintering process: A new era for ceramic packaging and microwave device development 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. Nutzungsrecht: © 2016 The American Ceramic Society ceramic‐polymer composites ceramics co‐fired ceramics cold sintering process microwave dielectric materials Baker, Amanda L oth Guo, Hanzheng oth Lanagan, Michael oth Randall, Clive A oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 2, Seite 669-677 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:2 pages:669-677 http://dx.doi.org/10.1111/jace.14603 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.14603/abstract http://search.proquest.com/docview/1867883440 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 2 669-677 |
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Enthalten in Journal of the American Ceramic Society 100(2017), 2, Seite 669-677 volume:100 year:2017 number:2 pages:669-677 |
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Cold sintering process: A new era for ceramic packaging and microwave device development |
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Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. |
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Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. |
| abstract_unstemmed |
Cold sintering process ( CSP ) is an extremely low‐temperature sintering process (room temperature to ~200°C) that uses aqueous‐based solutions as transient solvents to aid densification by a nonequilibrium dissolution‐precipitation process. In this work, CSP is introduced to fabricate microwave and packaging dielectric substrates, including ceramics (bulk monolithic substrates and multilayers) and ceramic‐polymer composites. Some dielectric materials, namely Li 2 MoO 4 , Na 2 Mo 2 O 7 , K 2 Mo 2 O 7 , and (LiBi) 0.5 MoO 4 ceramics, and also (1− x )Li 2 MoO 4 − x PTFE and (1− x )(LiBi) 0.5 MoO 4 − x PTFE composites, are selected to demonstrate the feasibility of CSP in microwave and packaging substrate applications. Selected dielectric ceramics and composites with high densities (88%‐95%) and good microwave dielectric properties (permittivity, 5.6‐37.1; Q × f , 1700‐30 500 GH z) were obtained by CSP at 120°C. CSP can be also used to potentially develop a new co‐fired ceramic technology, namely CSCC . Li 2 MoO 4 −Ag multilayer co‐fired ceramic structures were successfully fabricated without obvious delamination, warping, or interdiffusion. Numerous materials with different dielectric properties can be densified by CSP , indicating that CSP provides a simple, effective, and energy‐saving strategy for the ceramic packaging and microwave device development. |
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