Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime
Autor*in: |
Swami, Yashu [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017 |
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Übergeordnetes Werk: |
Enthalten in: Superlattices and microstructures - Oxford [u.a.] : Elsevier Science, Academic Press, 1985, 102(2017), Seite 259-272 |
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Übergeordnetes Werk: |
volume:102 ; year:2017 ; pages:259-272 |
Links: |
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DOI / URN: |
10.1016/j.spmi.2016.12.044 |
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Katalog-ID: |
OLC1991032013 |
---|
LEADER | 01000caa a2200265 4500 | ||
---|---|---|---|
001 | OLC1991032013 | ||
003 | DE-627 | ||
005 | 20220217022551.0 | ||
007 | tu | ||
008 | 170303s2017 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1016/j.spmi.2016.12.044 |2 doi | |
028 | 5 | 2 | |a PQ20170301 |
035 | |a (DE-627)OLC1991032013 | ||
035 | |a (DE-599)GBVOLC1991032013 | ||
035 | |a (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 | ||
035 | |a (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 530 |q DNB |
084 | |a 33.72 |2 bkl | ||
084 | |a 50.94 |2 bkl | ||
084 | |a 53.56 |2 bkl | ||
100 | 1 | |a Swami, Yashu |e verfasserin |4 aut | |
245 | 1 | 0 | |a Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
264 | 1 | |c 2017 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
700 | 1 | |a Rai, Sanjeev |4 oth | |
773 | 0 | 8 | |i Enthalten in |t Superlattices and microstructures |d Oxford [u.a.] : Elsevier Science, Academic Press, 1985 |g 102(2017), Seite 259-272 |w (DE-627)12918473X |w (DE-600)52577-7 |w (DE-576)014456168 |x 0749-6036 |7 nnns |
773 | 1 | 8 | |g volume:102 |g year:2017 |g pages:259-272 |
856 | 4 | 1 | |u http://dx.doi.org/10.1016/j.spmi.2016.12.044 |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_21 | ||
912 | |a GBV_ILN_70 | ||
936 | b | k | |a 33.72 |q AVZ |
936 | b | k | |a 50.94 |q AVZ |
936 | b | k | |a 53.56 |q AVZ |
951 | |a AR | ||
952 | |d 102 |j 2017 |h 259-272 |
author_variant |
y s ys |
---|---|
matchkey_str |
article:07496036:2017----::oeignaayiosbufclaaeurninnms |
hierarchy_sort_str |
2017 |
bklnumber |
33.72 50.94 53.56 |
publishDate |
2017 |
allfields |
10.1016/j.spmi.2016.12.044 doi PQ20170301 (DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan DE-627 ger DE-627 rakwb eng 530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Swami, Yashu verfasserin aut Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rai, Sanjeev oth Enthalten in Superlattices and microstructures Oxford [u.a.] : Elsevier Science, Academic Press, 1985 102(2017), Seite 259-272 (DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 0749-6036 nnns volume:102 year:2017 pages:259-272 http://dx.doi.org/10.1016/j.spmi.2016.12.044 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 33.72 AVZ 50.94 AVZ 53.56 AVZ AR 102 2017 259-272 |
spelling |
10.1016/j.spmi.2016.12.044 doi PQ20170301 (DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan DE-627 ger DE-627 rakwb eng 530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Swami, Yashu verfasserin aut Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rai, Sanjeev oth Enthalten in Superlattices and microstructures Oxford [u.a.] : Elsevier Science, Academic Press, 1985 102(2017), Seite 259-272 (DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 0749-6036 nnns volume:102 year:2017 pages:259-272 http://dx.doi.org/10.1016/j.spmi.2016.12.044 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 33.72 AVZ 50.94 AVZ 53.56 AVZ AR 102 2017 259-272 |
allfields_unstemmed |
10.1016/j.spmi.2016.12.044 doi PQ20170301 (DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan DE-627 ger DE-627 rakwb eng 530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Swami, Yashu verfasserin aut Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rai, Sanjeev oth Enthalten in Superlattices and microstructures Oxford [u.a.] : Elsevier Science, Academic Press, 1985 102(2017), Seite 259-272 (DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 0749-6036 nnns volume:102 year:2017 pages:259-272 http://dx.doi.org/10.1016/j.spmi.2016.12.044 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 33.72 AVZ 50.94 AVZ 53.56 AVZ AR 102 2017 259-272 |
allfieldsGer |
10.1016/j.spmi.2016.12.044 doi PQ20170301 (DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan DE-627 ger DE-627 rakwb eng 530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Swami, Yashu verfasserin aut Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rai, Sanjeev oth Enthalten in Superlattices and microstructures Oxford [u.a.] : Elsevier Science, Academic Press, 1985 102(2017), Seite 259-272 (DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 0749-6036 nnns volume:102 year:2017 pages:259-272 http://dx.doi.org/10.1016/j.spmi.2016.12.044 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 33.72 AVZ 50.94 AVZ 53.56 AVZ AR 102 2017 259-272 |
allfieldsSound |
10.1016/j.spmi.2016.12.044 doi PQ20170301 (DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan DE-627 ger DE-627 rakwb eng 530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Swami, Yashu verfasserin aut Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Rai, Sanjeev oth Enthalten in Superlattices and microstructures Oxford [u.a.] : Elsevier Science, Academic Press, 1985 102(2017), Seite 259-272 (DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 0749-6036 nnns volume:102 year:2017 pages:259-272 http://dx.doi.org/10.1016/j.spmi.2016.12.044 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 33.72 AVZ 50.94 AVZ 53.56 AVZ AR 102 2017 259-272 |
language |
English |
source |
Enthalten in Superlattices and microstructures 102(2017), Seite 259-272 volume:102 year:2017 pages:259-272 |
sourceStr |
Enthalten in Superlattices and microstructures 102(2017), Seite 259-272 volume:102 year:2017 pages:259-272 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
dewey-raw |
530 |
isfreeaccess_bool |
false |
container_title |
Superlattices and microstructures |
authorswithroles_txt_mv |
Swami, Yashu @@aut@@ Rai, Sanjeev @@oth@@ |
publishDateDaySort_date |
2017-01-01T00:00:00Z |
hierarchy_top_id |
12918473X |
dewey-sort |
3530 |
id |
OLC1991032013 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1991032013</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220217022551.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170303s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.spmi.2016.12.044</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170301</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1991032013</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1991032013</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Swami, Yashu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rai, Sanjeev</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Superlattices and microstructures</subfield><subfield code="d">Oxford [u.a.] : Elsevier Science, Academic Press, 1985</subfield><subfield code="g">102(2017), Seite 259-272</subfield><subfield code="w">(DE-627)12918473X</subfield><subfield code="w">(DE-600)52577-7</subfield><subfield code="w">(DE-576)014456168</subfield><subfield code="x">0749-6036</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:102</subfield><subfield code="g">year:2017</subfield><subfield code="g">pages:259-272</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1016/j.spmi.2016.12.044</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.72</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">102</subfield><subfield code="j">2017</subfield><subfield code="h">259-272</subfield></datafield></record></collection>
|
author |
Swami, Yashu |
spellingShingle |
Swami, Yashu ddc 530 bkl 33.72 bkl 50.94 bkl 53.56 Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
authorStr |
Swami, Yashu |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)12918473X |
format |
Article |
dewey-ones |
530 - Physics |
delete_txt_mv |
keep |
author_role |
aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0749-6036 |
topic_title |
530 DNB 33.72 bkl 50.94 bkl 53.56 bkl Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
topic |
ddc 530 bkl 33.72 bkl 50.94 bkl 53.56 |
topic_unstemmed |
ddc 530 bkl 33.72 bkl 50.94 bkl 53.56 |
topic_browse |
ddc 530 bkl 33.72 bkl 50.94 bkl 53.56 |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
author2_variant |
s r sr |
hierarchy_parent_title |
Superlattices and microstructures |
hierarchy_parent_id |
12918473X |
dewey-tens |
530 - Physics |
hierarchy_top_title |
Superlattices and microstructures |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)12918473X (DE-600)52577-7 (DE-576)014456168 |
title |
Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
ctrlnum |
(DE-627)OLC1991032013 (DE-599)GBVOLC1991032013 (PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610 (KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan |
title_full |
Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
author_sort |
Swami, Yashu |
journal |
Superlattices and microstructures |
journalStr |
Superlattices and microstructures |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science |
recordtype |
marc |
publishDateSort |
2017 |
contenttype_str_mv |
txt |
container_start_page |
259 |
author_browse |
Swami, Yashu |
container_volume |
102 |
class |
530 DNB 33.72 bkl 50.94 bkl 53.56 bkl |
format_se |
Aufsätze |
author-letter |
Swami, Yashu |
doi_str_mv |
10.1016/j.spmi.2016.12.044 |
dewey-full |
530 |
title_sort |
modeling and analysis of sub-surface leakage current in nano-mosfet under cutoff regime |
title_auth |
Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 |
title_short |
Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime |
url |
http://dx.doi.org/10.1016/j.spmi.2016.12.044 |
remote_bool |
false |
author2 |
Rai, Sanjeev |
author2Str |
Rai, Sanjeev |
ppnlink |
12918473X |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
author2_role |
oth |
doi_str |
10.1016/j.spmi.2016.12.044 |
up_date |
2024-07-04T02:26:07.874Z |
_version_ |
1803613600874496000 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1991032013</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220217022551.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170303s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.spmi.2016.12.044</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170301</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1991032013</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1991032013</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c679-d158476f34fce5fa555a5135134d869f6edcc3d8d19a2e6ccce69ce9d4147c610</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0139852020170000102000000259modelingandanalysisofsubsurfaceleakagecurrentinnan</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.94</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.56</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Swami, Yashu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rai, Sanjeev</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Superlattices and microstructures</subfield><subfield code="d">Oxford [u.a.] : Elsevier Science, Academic Press, 1985</subfield><subfield code="g">102(2017), Seite 259-272</subfield><subfield code="w">(DE-627)12918473X</subfield><subfield code="w">(DE-600)52577-7</subfield><subfield code="w">(DE-576)014456168</subfield><subfield code="x">0749-6036</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:102</subfield><subfield code="g">year:2017</subfield><subfield code="g">pages:259-272</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1016/j.spmi.2016.12.044</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.72</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.94</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.56</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">102</subfield><subfield code="j">2017</subfield><subfield code="h">259-272</subfield></datafield></record></collection>
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