Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources
This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. A...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shen, Jingyu [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
total ionizing dose (TID) effect |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 64(2017), 3, Seite 969-975 |
|---|---|
| Übergeordnetes Werk: |
volume:64 ; year:2017 ; number:3 ; pages:969-975 |
| Links: |
|---|
| DOI / URN: |
10.1109/TNS.2017.2655302 |
|---|
| Katalog-ID: |
OLC1992373590 |
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| 520 | |a This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. | ||
| 650 | 4 | |a total ionizing dose (TID) effect | |
| 650 | 4 | |a Co-60 | |
| 650 | 4 | |a Nonvolatile memory | |
| 650 | 4 | |a Performance evaluation | |
| 650 | 4 | |a Radiation effects | |
| 650 | 4 | |a ferroelectric random access memory (FRAM) memory cell | |
| 650 | 4 | |a Computer architecture | |
| 650 | 4 | |a Ferroelectric films | |
| 650 | 4 | |a X-ray | |
| 650 | 4 | |a Random access memory | |
| 650 | 4 | |a electron accelerator | |
| 650 | 4 | |a Microprocessors | |
| 700 | 1 | |a Li, Wei |4 oth | |
| 700 | 1 | |a Zhang, Yuanbin |4 oth | |
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10.1109/TNS.2017.2655302 doi PQ20171125 (DE-627)OLC1992373590 (DE-599)GBVOLC1992373590 (PRQ)i940-42dd1cfd2bcac286fb4254359785667ca1bf9616777c890fbf6ec88289ee1140 (KEY)0054996720170000064000300969assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. total ionizing dose (TID) effect Co-60 Nonvolatile memory Performance evaluation Radiation effects ferroelectric random access memory (FRAM) memory cell Computer architecture Ferroelectric films X-ray Random access memory electron accelerator Microprocessors Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 3, Seite 969-975 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:3 pages:969-975 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext http://ieeexplore.ieee.org/document/7822991 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 3 969-975 |
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10.1109/TNS.2017.2655302 doi PQ20171125 (DE-627)OLC1992373590 (DE-599)GBVOLC1992373590 (PRQ)i940-42dd1cfd2bcac286fb4254359785667ca1bf9616777c890fbf6ec88289ee1140 (KEY)0054996720170000064000300969assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. total ionizing dose (TID) effect Co-60 Nonvolatile memory Performance evaluation Radiation effects ferroelectric random access memory (FRAM) memory cell Computer architecture Ferroelectric films X-ray Random access memory electron accelerator Microprocessors Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 3, Seite 969-975 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:3 pages:969-975 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext http://ieeexplore.ieee.org/document/7822991 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 3 969-975 |
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10.1109/TNS.2017.2655302 doi PQ20171125 (DE-627)OLC1992373590 (DE-599)GBVOLC1992373590 (PRQ)i940-42dd1cfd2bcac286fb4254359785667ca1bf9616777c890fbf6ec88289ee1140 (KEY)0054996720170000064000300969assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. total ionizing dose (TID) effect Co-60 Nonvolatile memory Performance evaluation Radiation effects ferroelectric random access memory (FRAM) memory cell Computer architecture Ferroelectric films X-ray Random access memory electron accelerator Microprocessors Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 3, Seite 969-975 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:3 pages:969-975 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext http://ieeexplore.ieee.org/document/7822991 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 3 969-975 |
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10.1109/TNS.2017.2655302 doi PQ20171125 (DE-627)OLC1992373590 (DE-599)GBVOLC1992373590 (PRQ)i940-42dd1cfd2bcac286fb4254359785667ca1bf9616777c890fbf6ec88289ee1140 (KEY)0054996720170000064000300969assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. total ionizing dose (TID) effect Co-60 Nonvolatile memory Performance evaluation Radiation effects ferroelectric random access memory (FRAM) memory cell Computer architecture Ferroelectric films X-ray Random access memory electron accelerator Microprocessors Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 3, Seite 969-975 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:3 pages:969-975 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext http://ieeexplore.ieee.org/document/7822991 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 3 969-975 |
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10.1109/TNS.2017.2655302 doi PQ20171125 (DE-627)OLC1992373590 (DE-599)GBVOLC1992373590 (PRQ)i940-42dd1cfd2bcac286fb4254359785667ca1bf9616777c890fbf6ec88289ee1140 (KEY)0054996720170000064000300969assessmentoftideffectofframmemorycellunderelectron DE-627 ger DE-627 rakwb eng 620 DNB Shen, Jingyu verfasserin aut Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. total ionizing dose (TID) effect Co-60 Nonvolatile memory Performance evaluation Radiation effects ferroelectric random access memory (FRAM) memory cell Computer architecture Ferroelectric films X-ray Random access memory electron accelerator Microprocessors Li, Wei oth Zhang, Yuanbin oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 3, Seite 969-975 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:3 pages:969-975 http://dx.doi.org/10.1109/TNS.2017.2655302 Volltext http://ieeexplore.ieee.org/document/7822991 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 3 969-975 |
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Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources |
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Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources |
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Shen, Jingyu |
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assessment of tid effect of fram memory cell under electron, x-ray, and co- 60~\gamma ray radiation sources |
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Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources |
| abstract |
This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. |
| abstractGer |
This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. |
| abstract_unstemmed |
This paper investigates the total ionizing dose (TID) effect of the memory cell of the ferroelectric random access memory (FRAM) under electron, X-ray, and Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray radiation sources. An electron accelerator and an X-ray microbeam from synchrotron, which are used to simulate the given radiation environments, offer local irradiation on the FRAM memory cell. In addition, the Co-<inline-formula> <tex-math notation="LaTeX">60~\gamma </tex-math></inline-formula> ray source provides global irradiation on the full chip of FRAM. The FRAM memory cell is proved to have a lower failure threshold for TID effect than the ferroelectric thin-film capacitor due to the performance degradation of nMOS transistor in memory cell. The failure phenomenon is studied according to the experimental results of different radiation sources, and the failure mechanism is discussed based on the technology and the characteristics of FRAM memory cell in circuit-level. The difference of device performance is also analyzed for electron irradiation and X-ray irradiation. |
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Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- 60~\gamma Ray Radiation Sources |
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http://dx.doi.org/10.1109/TNS.2017.2655302 http://ieeexplore.ieee.org/document/7822991 |
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Li, Wei Zhang, Yuanbin |
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