Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications
This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL applicati...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Benkechkache, M. A [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 64(2017), 4, Seite 1062-1070 |
|---|---|
| Übergeordnetes Werk: |
volume:64 ; year:2017 ; number:4 ; pages:1062-1070 |
| Links: |
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| DOI / URN: |
10.1109/TNS.2017.2672745 |
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| Katalog-ID: |
OLC1992373779 |
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| 520 | |a This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. | ||
| 650 | 4 | |a Sensor phenomena and characterization | |
| 650 | 4 | |a silicon detectors | |
| 650 | 4 | |a pixel detectors | |
| 650 | 4 | |a Active edge | |
| 650 | 4 | |a Photonics | |
| 650 | 4 | |a Image edge detection | |
| 650 | 4 | |a Detectors | |
| 650 | 4 | |a Substrates | |
| 650 | 4 | |a free electron lasers | |
| 650 | 4 | |a X-ray detectors | |
| 650 | 4 | |a X-ray imaging | |
| 700 | 1 | |a Latreche, S |4 oth | |
| 700 | 1 | |a Ronchin, S |4 oth | |
| 700 | 1 | |a Boscardin, M |4 oth | |
| 700 | 1 | |a Pancheri, L |4 oth | |
| 700 | 1 | |a Dalla Betta, G.-F |4 oth | |
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10.1109/TNS.2017.2672745 doi PQ20170501 (DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep DE-627 ger DE-627 rakwb eng 620 DNB Benkechkache, M. A verfasserin aut Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. Sensor phenomena and characterization silicon detectors pixel detectors Active edge Photonics Image edge detection Detectors Substrates free electron lasers X-ray detectors X-ray imaging Latreche, S oth Ronchin, S oth Boscardin, M oth Pancheri, L oth Dalla Betta, G.-F oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 4, Seite 1062-1070 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:4 pages:1062-1070 http://dx.doi.org/10.1109/TNS.2017.2672745 Volltext http://ieeexplore.ieee.org/document/7862292 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 4 1062-1070 |
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10.1109/TNS.2017.2672745 doi PQ20170501 (DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep DE-627 ger DE-627 rakwb eng 620 DNB Benkechkache, M. A verfasserin aut Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. Sensor phenomena and characterization silicon detectors pixel detectors Active edge Photonics Image edge detection Detectors Substrates free electron lasers X-ray detectors X-ray imaging Latreche, S oth Ronchin, S oth Boscardin, M oth Pancheri, L oth Dalla Betta, G.-F oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 4, Seite 1062-1070 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:4 pages:1062-1070 http://dx.doi.org/10.1109/TNS.2017.2672745 Volltext http://ieeexplore.ieee.org/document/7862292 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 4 1062-1070 |
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10.1109/TNS.2017.2672745 doi PQ20170501 (DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep DE-627 ger DE-627 rakwb eng 620 DNB Benkechkache, M. A verfasserin aut Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. Sensor phenomena and characterization silicon detectors pixel detectors Active edge Photonics Image edge detection Detectors Substrates free electron lasers X-ray detectors X-ray imaging Latreche, S oth Ronchin, S oth Boscardin, M oth Pancheri, L oth Dalla Betta, G.-F oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 4, Seite 1062-1070 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:4 pages:1062-1070 http://dx.doi.org/10.1109/TNS.2017.2672745 Volltext http://ieeexplore.ieee.org/document/7862292 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 4 1062-1070 |
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10.1109/TNS.2017.2672745 doi PQ20170501 (DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep DE-627 ger DE-627 rakwb eng 620 DNB Benkechkache, M. A verfasserin aut Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. Sensor phenomena and characterization silicon detectors pixel detectors Active edge Photonics Image edge detection Detectors Substrates free electron lasers X-ray detectors X-ray imaging Latreche, S oth Ronchin, S oth Boscardin, M oth Pancheri, L oth Dalla Betta, G.-F oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 4, Seite 1062-1070 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:4 pages:1062-1070 http://dx.doi.org/10.1109/TNS.2017.2672745 Volltext http://ieeexplore.ieee.org/document/7862292 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 4 1062-1070 |
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10.1109/TNS.2017.2672745 doi PQ20170501 (DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep DE-627 ger DE-627 rakwb eng 620 DNB Benkechkache, M. A verfasserin aut Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. Sensor phenomena and characterization silicon detectors pixel detectors Active edge Photonics Image edge detection Detectors Substrates free electron lasers X-ray detectors X-ray imaging Latreche, S oth Ronchin, S oth Boscardin, M oth Pancheri, L oth Dalla Betta, G.-F oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 64(2017), 4, Seite 1062-1070 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:64 year:2017 number:4 pages:1062-1070 http://dx.doi.org/10.1109/TNS.2017.2672745 Volltext http://ieeexplore.ieee.org/document/7862292 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 64 2017 4 1062-1070 |
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IEEE transactions on nuclear science |
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Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications |
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(DE-627)OLC1992373779 (DE-599)GBVOLC1992373779 (PRQ)c709-a561e928b1370c822531899bb9b03ff0b3a1e4ce3fb043505fb763a43c87be3b0 (KEY)0054996720170000064000401062designandfirstcharacterizationofactiveandslimedgep |
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Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications |
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Benkechkache, M. A |
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IEEE transactions on nuclear science |
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IEEE transactions on nuclear science |
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Benkechkache, M. A |
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10.1109/TNS.2017.2672745 |
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620 |
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design and first characterization of active and slim-edge planar detectors for fel applications |
| title_auth |
Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications |
| abstract |
This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. |
| abstractGer |
This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. |
| abstract_unstemmed |
This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the same time, care has been taken to reduce the dead area at the borders of the sensors, thus minimizing the loss of information and distortion introduced when tiling several dies in a large area imager. Different active-edge and slim-edge terminations, designed with the aid of TCAD simulations, are discussed. Based on numerical simulations, a wafer layout was designed and devices with different configurations were fabricated. The experimental results from the electrical characterization of the produced p-on-n sensors and test structures are presented and discussed. |
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| title_short |
Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications |
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http://dx.doi.org/10.1109/TNS.2017.2672745 http://ieeexplore.ieee.org/document/7862292 |
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Latreche, S Ronchin, S Boscardin, M Pancheri, L Dalla Betta, G.-F |
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