Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gao, Z [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 38(2017), 5, Seite 611-614 |
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| Übergeordnetes Werk: |
volume:38 ; year:2017 ; number:5 ; pages:611-614 |
| Links: |
|---|
| DOI / URN: |
10.1109/LED.2017.2682795 |
|---|
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OLC1992718571 |
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| 520 | |a AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. | ||
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10.1109/LED.2017.2682795 doi PQ20170501 (DE-627)OLC1992718571 (DE-599)GBVOLC1992718571 (PRQ)ieee_primary_0b00006485c29b1b0 (KEY)0101063820170000038000500611effectsofgd2o3gatedielectriconprotonirradiatedalga DE-627 ger DE-627 rakwb eng 620 DNB Gao, Z verfasserin aut Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. proton irradiation AlGaN/GaN MOS-HEMTs HEMTs Romero, M. F oth Redondo-Cubero, A oth Pampillon, M. A oth San Andres, E oth Calle, F oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 38(2017), 5, Seite 611-614 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:38 year:2017 number:5 pages:611-614 http://dx.doi.org/10.1109/LED.2017.2682795 Volltext http://ieeexplore.ieee.org/document/7879197 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 AR 38 2017 5 611-614 |
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10.1109/LED.2017.2682795 doi PQ20170501 (DE-627)OLC1992718571 (DE-599)GBVOLC1992718571 (PRQ)ieee_primary_0b00006485c29b1b0 (KEY)0101063820170000038000500611effectsofgd2o3gatedielectriconprotonirradiatedalga DE-627 ger DE-627 rakwb eng 620 DNB Gao, Z verfasserin aut Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. proton irradiation AlGaN/GaN MOS-HEMTs HEMTs Romero, M. F oth Redondo-Cubero, A oth Pampillon, M. A oth San Andres, E oth Calle, F oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 38(2017), 5, Seite 611-614 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:38 year:2017 number:5 pages:611-614 http://dx.doi.org/10.1109/LED.2017.2682795 Volltext http://ieeexplore.ieee.org/document/7879197 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 AR 38 2017 5 611-614 |
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10.1109/LED.2017.2682795 doi PQ20170501 (DE-627)OLC1992718571 (DE-599)GBVOLC1992718571 (PRQ)ieee_primary_0b00006485c29b1b0 (KEY)0101063820170000038000500611effectsofgd2o3gatedielectriconprotonirradiatedalga DE-627 ger DE-627 rakwb eng 620 DNB Gao, Z verfasserin aut Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. proton irradiation AlGaN/GaN MOS-HEMTs HEMTs Romero, M. F oth Redondo-Cubero, A oth Pampillon, M. A oth San Andres, E oth Calle, F oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 38(2017), 5, Seite 611-614 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:38 year:2017 number:5 pages:611-614 http://dx.doi.org/10.1109/LED.2017.2682795 Volltext http://ieeexplore.ieee.org/document/7879197 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 AR 38 2017 5 611-614 |
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10.1109/LED.2017.2682795 doi PQ20170501 (DE-627)OLC1992718571 (DE-599)GBVOLC1992718571 (PRQ)ieee_primary_0b00006485c29b1b0 (KEY)0101063820170000038000500611effectsofgd2o3gatedielectriconprotonirradiatedalga DE-627 ger DE-627 rakwb eng 620 DNB Gao, Z verfasserin aut Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. proton irradiation AlGaN/GaN MOS-HEMTs HEMTs Romero, M. F oth Redondo-Cubero, A oth Pampillon, M. A oth San Andres, E oth Calle, F oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 38(2017), 5, Seite 611-614 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:38 year:2017 number:5 pages:611-614 http://dx.doi.org/10.1109/LED.2017.2682795 Volltext http://ieeexplore.ieee.org/document/7879197 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 AR 38 2017 5 611-614 |
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10.1109/LED.2017.2682795 doi PQ20170501 (DE-627)OLC1992718571 (DE-599)GBVOLC1992718571 (PRQ)ieee_primary_0b00006485c29b1b0 (KEY)0101063820170000038000500611effectsofgd2o3gatedielectriconprotonirradiatedalga DE-627 ger DE-627 rakwb eng 620 DNB Gao, Z verfasserin aut Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. proton irradiation AlGaN/GaN MOS-HEMTs HEMTs Romero, M. F oth Redondo-Cubero, A oth Pampillon, M. A oth San Andres, E oth Calle, F oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 38(2017), 5, Seite 611-614 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:38 year:2017 number:5 pages:611-614 http://dx.doi.org/10.1109/LED.2017.2682795 Volltext http://ieeexplore.ieee.org/document/7879197 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 AR 38 2017 5 611-614 |
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10.1109/LED.2017.2682795 |
| dewey-full |
620 |
| title_sort |
effects of gd2o3 gate dielectric on proton-irradiated algan/gan hemts |
| title_auth |
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs |
| abstract |
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. |
| abstractGer |
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. |
| abstract_unstemmed |
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as gate dielectric were irradiated with 2-MeV protons up to fluence of <inline-formula> <tex-math notation="LaTeX">1 \times 10^{15} </tex-math></inline-formula> cm −2 . Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd 2 O 3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd 2 O 3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd 2 O 3 gate layer before and after irradiation are also discussed. |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_4266 |
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5 |
| title_short |
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs |
| url |
http://dx.doi.org/10.1109/LED.2017.2682795 http://ieeexplore.ieee.org/document/7879197 |
| remote_bool |
false |
| author2 |
Romero, M. F Redondo-Cubero, A Pampillon, M. A San Andres, E Calle, F |
| author2Str |
Romero, M. F Redondo-Cubero, A Pampillon, M. A San Andres, E Calle, F |
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| doi_str |
10.1109/LED.2017.2682795 |
| up_date |
2024-07-04T05:31:29.202Z |
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