An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the cap...
Ausführliche Beschreibung
Autor*in: |
Gao, Zhiqiang [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017 |
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Rechteinformationen: |
Nutzungsrecht: © 2017, World Scientific Publishing Company |
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Systematik: |
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Übergeordnetes Werk: |
Enthalten in: Modern physics letters / B - Singapore [u.a.] : World Scientific Publ., 1987, 31(2017), 8 |
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Übergeordnetes Werk: |
volume:31 ; year:2017 ; number:8 |
Links: |
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DOI / URN: |
10.1142/S0217984917500701 |
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Katalog-ID: |
OLC1993071105 |
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520 | |a In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. | ||
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
abstractGer |
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
abstract_unstemmed |
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1993071105</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230715044523.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170512s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1142/S0217984917500701</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170721</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1993071105</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1993071105</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UA 5534.</subfield><subfield code="q">AVZ</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gao, Zhiqiang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="3"><subfield code="a">An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. 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