An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the cap...
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| Autor*in: |
Gao, Zhiqiang [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © 2017, World Scientific Publishing Company |
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| Systematik: |
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| Übergeordnetes Werk: |
Enthalten in: Modern physics letters / B - Singapore [u.a.] : World Scientific Publ., 1987, 31(2017), 8 |
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| Übergeordnetes Werk: |
volume:31 ; year:2017 ; number:8 |
| Links: |
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| DOI / URN: |
10.1142/S0217984917500701 |
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OLC1993071105 |
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| 520 | |a In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. | ||
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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10.1142/S0217984917500701 doi PQ20170721 (DE-627)OLC1993071105 (DE-599)GBVOLC1993071105 (PRQ)w771-c1351554fd151c849b2cc3a00ef371618ddda2278a6c67b21f3a23cc587368d40 (KEY)0160451120170000031000800000integratedlow1fnoiseandhighsensitivitycmosinstrume DE-627 ger DE-627 rakwb eng 530 DNB UA 5534. AVZ rvk Gao, Zhiqiang verfasserin aut An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. Nutzungsrecht: © 2017, World Scientific Publishing Company Luan, Bo oth Zhao, Jincai oth Liu, Xiaowei oth Enthalten in Modern physics letters / B Singapore [u.a.] : World Scientific Publ., 1987 31(2017), 8 (DE-627)130684228 (DE-600)896450-6 (DE-576)016233727 0217-9849 nnns volume:31 year:2017 number:8 http://dx.doi.org/10.1142/S0217984917500701 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_70 GBV_ILN_4126 UA 5534. AR 31 2017 8 |
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An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors |
| abstract |
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
| abstractGer |
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
| abstract_unstemmed |
In this paper, a very low 1/f noise integrated Wheatstone bridge magnetoresistive sensor ASIC based on magnetic tunnel junction (MTJ) technology is presented for high sensitivity measurements. The present CMOS instrumentation amplifier employs the gain-boost folded-cascode structure based on the capacitive-feedback chopper-stabilized technique. By chopping both the input and the output of the amplifier, combined with MTJ magnetoresistive sensitive elements, a noise equivalent magnetoresistance 1 nT/Hz 1 / 2 at 2 Hz, the equivalent input noise spectral density 17 nV/Hz 1 / 2 (2Hz) is achieved. The chip-scale package of the TMR sensor and the instrumentation amplifier is only about 5 mm × 5 mm × 1 mm, while the whole DC current dissipates only 2 mA. |
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An integrated low 1/f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors |
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10.1142/S0217984917500701 |
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