Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering
We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-volta...
Ausführliche Beschreibung
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| Autor*in: |
Sharma, Pankaj [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © Author(s) |
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| Übergeordnetes Werk: |
Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 121(2017), 22 |
|---|---|
| Übergeordnetes Werk: |
volume:121 ; year:2017 ; number:22 |
| Links: |
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| DOI / URN: |
10.1063/1.4985246 |
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OLC1994662395 |
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| 520 | |a We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. | ||
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10.1063/1.4985246 doi PQ20170901 (DE-627)OLC1994662395 (DE-599)GBVOLC1994662395 (PRQ)s711-787a181173a5f3a815e47e17b4da261efbf99015ecfbd9ffb14ea0c81b1292180 (KEY)0076740920170000121002200000optoelectronicpropertiesofphosphorusdopedptypeznof DE-627 ger DE-627 rakwb eng 530 DE-600 Sharma, Pankaj verfasserin aut Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. Nutzungsrecht: © Author(s) Aaryashree oth Garg, Vivek oth Mukherjee, Shaibal oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 121(2017), 22 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:121 year:2017 number:22 http://dx.doi.org/10.1063/1.4985246 Volltext http://dx.doi.org/10.1063/1.4985246 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 121 2017 22 |
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10.1063/1.4985246 doi PQ20170901 (DE-627)OLC1994662395 (DE-599)GBVOLC1994662395 (PRQ)s711-787a181173a5f3a815e47e17b4da261efbf99015ecfbd9ffb14ea0c81b1292180 (KEY)0076740920170000121002200000optoelectronicpropertiesofphosphorusdopedptypeznof DE-627 ger DE-627 rakwb eng 530 DE-600 Sharma, Pankaj verfasserin aut Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. Nutzungsrecht: © Author(s) Aaryashree oth Garg, Vivek oth Mukherjee, Shaibal oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 121(2017), 22 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:121 year:2017 number:22 http://dx.doi.org/10.1063/1.4985246 Volltext http://dx.doi.org/10.1063/1.4985246 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 121 2017 22 |
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10.1063/1.4985246 doi PQ20170901 (DE-627)OLC1994662395 (DE-599)GBVOLC1994662395 (PRQ)s711-787a181173a5f3a815e47e17b4da261efbf99015ecfbd9ffb14ea0c81b1292180 (KEY)0076740920170000121002200000optoelectronicpropertiesofphosphorusdopedptypeznof DE-627 ger DE-627 rakwb eng 530 DE-600 Sharma, Pankaj verfasserin aut Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. Nutzungsrecht: © Author(s) Aaryashree oth Garg, Vivek oth Mukherjee, Shaibal oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 121(2017), 22 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:121 year:2017 number:22 http://dx.doi.org/10.1063/1.4985246 Volltext http://dx.doi.org/10.1063/1.4985246 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 121 2017 22 |
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10.1063/1.4985246 doi PQ20170901 (DE-627)OLC1994662395 (DE-599)GBVOLC1994662395 (PRQ)s711-787a181173a5f3a815e47e17b4da261efbf99015ecfbd9ffb14ea0c81b1292180 (KEY)0076740920170000121002200000optoelectronicpropertiesofphosphorusdopedptypeznof DE-627 ger DE-627 rakwb eng 530 DE-600 Sharma, Pankaj verfasserin aut Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. Nutzungsrecht: © Author(s) Aaryashree oth Garg, Vivek oth Mukherjee, Shaibal oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 121(2017), 22 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:121 year:2017 number:22 http://dx.doi.org/10.1063/1.4985246 Volltext http://dx.doi.org/10.1063/1.4985246 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 121 2017 22 |
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10.1063/1.4985246 doi PQ20170901 (DE-627)OLC1994662395 (DE-599)GBVOLC1994662395 (PRQ)s711-787a181173a5f3a815e47e17b4da261efbf99015ecfbd9ffb14ea0c81b1292180 (KEY)0076740920170000121002200000optoelectronicpropertiesofphosphorusdopedptypeznof DE-627 ger DE-627 rakwb eng 530 DE-600 Sharma, Pankaj verfasserin aut Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. Nutzungsrecht: © Author(s) Aaryashree oth Garg, Vivek oth Mukherjee, Shaibal oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 121(2017), 22 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:121 year:2017 number:22 http://dx.doi.org/10.1063/1.4985246 Volltext http://dx.doi.org/10.1063/1.4985246 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 121 2017 22 |
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optoelectronic properties of phosphorus doped p-type zno films grown by dual ion beam sputtering |
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Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering |
| abstract |
We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. |
| abstractGer |
We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. |
| abstract_unstemmed |
We report highly conductive and stable p-type phosphorus doped ZnO (PZO) thin films fabricated by dual ion beam sputtering and subsequent thermal annealing. Hall measurements established that the annealed PZO films were p-type, which were also confirmed by typical diode-like rectifying current-voltage (I-V) characteristics of the p-PZO/n-Si heterojunction. The maximum hole concentration was evaluated to be 8.62 × 1019 cm−3 with a resistivity of 0.066 Ω cm and a mobility of 1.08 cm2/V s at room temperature. The stability of the p-type conduction was verified by Hall measurement performed again after one year of thin film fabrication resulting in a hole concentration of 3.77 × 1019 cm−3. Spectroscopic ellipsometry was employed to determine the complex dielectric function ( ε = ε 1 + i ε 2 ) of p-type PZO films in the 1.2–6.4 eV energy range by a parameterized semiconductor oscillator model. Room temperature excitonic features were identified and the critical point energy was determined by second order derivative of imaginary part of dielectric function. The line shape analysis of ε resulted in a red shift of the energy positions of the critical point with an increase in hole concentration. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 |
| container_issue |
22 |
| title_short |
Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering |
| url |
http://dx.doi.org/10.1063/1.4985246 |
| remote_bool |
false |
| author2 |
Aaryashree Garg, Vivek Mukherjee, Shaibal |
| author2Str |
Aaryashree Garg, Vivek Mukherjee, Shaibal |
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129079030 |
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| doi_str |
10.1063/1.4985246 |
| up_date |
2024-07-03T18:44:55.105Z |
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