GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure

The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area...
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Autor*in:	Zhang, Lingxia [verfasserIn] Tang, Shaoji Wu, Hualong Wang, Hailong Wu, Zhisheng Jiang, Hao

Format:	Artikel
Sprache:	Englisch

Erschienen:	2017

Rechteinformationen:	Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

Schlagwörter:	heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition

Übergeordnetes Werk:	Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 214(2017), 8
Übergeordnetes Werk:	volume:214 ; year:2017 ; number:8

Links:	Volltext Link aufrufen Link aufrufen

DOI / URN:	10.1002/pssa.201600821

Katalog-ID:	OLC199607301X

Internformat


LEADER	01000caa a2200265 4500
001	OLC199607301X
003	DE-627
005	20230516114131.0
007	tu
008	170901s2017 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1002/pssa.201600821 \|2 doi
028	5	2	\|a PQ20170901
035			\|a (DE-627)OLC199607301X
035			\|a (DE-599)GBVOLC199607301X
035			\|a (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3
035			\|a (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 530 \|q DE-101
084			\|a 33.60 \|2 bkl
084			\|a 51.00 \|2 bkl
100	1		\|a Zhang, Lingxia \|e verfasserin \|4 aut
245	1	0	\|a GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
264		1	\|c 2017
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
520			\|a The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.
540			\|a Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
650		4	\|a heterojunctions
650		4	\|a AlGaN
650		4	\|a GaN
650		4	\|a phototransistors
650		4	\|a optical gain
650		4	\|a Sapphire
650		4	\|a Rejection
650		4	\|a Organic chemicals
650		4	\|a Phototransistors
650		4	\|a Dark current
650		4	\|a Structural analysis
650		4	\|a Substrates
650		4	\|a Ultraviolet
650		4	\|a Bias
650		4	\|a Chemical vapor deposition
650		4	\|a Metal organic chemical vapor deposition
700	1		\|a Tang, Shaoji \|4 oth
700	1		\|a Wu, Hualong \|4 oth
700	1		\|a Wang, Hailong \|4 oth
700	1		\|a Wu, Zhisheng \|4 oth
700	1		\|a Jiang, Hao \|4 oth
773	0	8	\|i Enthalten in \|t Physica status solidi. A, Applications and materials science \|d Berlin : Wiley-VCH, 1970 \|g 214(2017), 8 \|w (DE-627)129503932 \|w (DE-600)208850-2 \|w (DE-576)014907240 \|x 1862-6300 \|7 nnns
773	1	8	\|g volume:214 \|g year:2017 \|g number:8
856	4	1	\|u http://dx.doi.org/10.1002/pssa.201600821 \|3 Volltext
856	4	2	\|u http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract
856	4	2	\|u https://search.proquest.com/docview/1928491859
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a SSG-OLC-PHA
912			\|a SSG-OLC-DE-84
912			\|a GBV_ILN_23
912			\|a GBV_ILN_70
912			\|a GBV_ILN_267
912			\|a GBV_ILN_2018
912			\|a GBV_ILN_4277
936	b	k	\|a 33.60 \|q AVZ
936	b	k	\|a 51.00 \|q AVZ
951			\|a AR
952			\|d 214 \|j 2017 \|e 8

Indexfelder

author_variant	l z lz
matchkey_str	article:18626300:2017----::aa0g0naevsbelndulhtrjntopoornitri
hierarchy_sort_str	2017
bklnumber	33.60 51.00
publishDate	2017
allfields	10.1002/pssa.201600821 doi PQ20170901 (DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Zhang, Lingxia verfasserin aut GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition Tang, Shaoji oth Wu, Hualong oth Wang, Hailong oth Wu, Zhisheng oth Jiang, Hao oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 8 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:8 http://dx.doi.org/10.1002/pssa.201600821 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 8
spelling	10.1002/pssa.201600821 doi PQ20170901 (DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Zhang, Lingxia verfasserin aut GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition Tang, Shaoji oth Wu, Hualong oth Wang, Hailong oth Wu, Zhisheng oth Jiang, Hao oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 8 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:8 http://dx.doi.org/10.1002/pssa.201600821 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 8
allfields_unstemmed	10.1002/pssa.201600821 doi PQ20170901 (DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Zhang, Lingxia verfasserin aut GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition Tang, Shaoji oth Wu, Hualong oth Wang, Hailong oth Wu, Zhisheng oth Jiang, Hao oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 8 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:8 http://dx.doi.org/10.1002/pssa.201600821 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 8
allfieldsGer	10.1002/pssa.201600821 doi PQ20170901 (DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Zhang, Lingxia verfasserin aut GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition Tang, Shaoji oth Wu, Hualong oth Wang, Hailong oth Wu, Zhisheng oth Jiang, Hao oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 8 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:8 http://dx.doi.org/10.1002/pssa.201600821 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 8
allfieldsSound	10.1002/pssa.201600821 doi PQ20170901 (DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Zhang, Lingxia verfasserin aut GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition Tang, Shaoji oth Wu, Hualong oth Wang, Hailong oth Wu, Zhisheng oth Jiang, Hao oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 8 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:8 http://dx.doi.org/10.1002/pssa.201600821 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 8
language	English
source	Enthalten in Physica status solidi. A, Applications and materials science 214(2017), 8 volume:214 year:2017 number:8
sourceStr	Enthalten in Physica status solidi. A, Applications and materials science 214(2017), 8 volume:214 year:2017 number:8
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition
dewey-raw	530
isfreeaccess_bool	false
container_title	Physica status solidi. A, Applications and materials science
authorswithroles_txt_mv	Zhang, Lingxia @@aut@@ Tang, Shaoji @@oth@@ Wu, Hualong @@oth@@ Wang, Hailong @@oth@@ Wu, Zhisheng @@oth@@ Jiang, Hao @@oth@@
publishDateDaySort_date	2017-01-01T00:00:00Z
hierarchy_top_id	129503932
dewey-sort	3530
id	OLC199607301X
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC199607301X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230516114131.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170901s2017 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1002/pssa.201600821</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170901</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC199607301X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC199607301X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-101</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Lingxia</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">heterojunctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlGaN</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GaN</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phototransistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">optical gain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sapphire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rejection</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Organic chemicals</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Phototransistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dark current</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Structural analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Substrates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ultraviolet</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bias</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical vapor deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal organic chemical vapor deposition</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Shaoji</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Hualong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Hailong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Zhisheng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jiang, Hao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica status solidi. A, Applications and materials science</subfield><subfield code="d">Berlin : Wiley-VCH, 1970</subfield><subfield code="g">214(2017), 8</subfield><subfield code="w">(DE-627)129503932</subfield><subfield code="w">(DE-600)208850-2</subfield><subfield code="w">(DE-576)014907240</subfield><subfield code="x">1862-6300</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:214</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:8</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1002/pssa.201600821</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://search.proquest.com/docview/1928491859</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.60</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">214</subfield><subfield code="j">2017</subfield><subfield code="e">8</subfield></datafield></record></collection>
author	Zhang, Lingxia
spellingShingle	Zhang, Lingxia ddc 530 bkl 33.60 bkl 51.00 misc heterojunctions misc AlGaN misc GaN misc phototransistors misc optical gain misc Sapphire misc Rejection misc Organic chemicals misc Phototransistors misc Dark current misc Structural analysis misc Substrates misc Ultraviolet misc Bias misc Chemical vapor deposition misc Metal organic chemical vapor deposition GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
authorStr	Zhang, Lingxia
ppnlink_with_tag_str_mv	@@773@@(DE-627)129503932
format	Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	1862-6300
topic_title	530 DE-101 33.60 bkl 51.00 bkl GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure heterojunctions AlGaN GaN phototransistors optical gain Sapphire Rejection Organic chemicals Phototransistors Dark current Structural analysis Substrates Ultraviolet Bias Chemical vapor deposition Metal organic chemical vapor deposition
topic	ddc 530 bkl 33.60 bkl 51.00 misc heterojunctions misc AlGaN misc GaN misc phototransistors misc optical gain misc Sapphire misc Rejection misc Organic chemicals misc Phototransistors misc Dark current misc Structural analysis misc Substrates misc Ultraviolet misc Bias misc Chemical vapor deposition misc Metal organic chemical vapor deposition
topic_unstemmed	ddc 530 bkl 33.60 bkl 51.00 misc heterojunctions misc AlGaN misc GaN misc phototransistors misc optical gain misc Sapphire misc Rejection misc Organic chemicals misc Phototransistors misc Dark current misc Structural analysis misc Substrates misc Ultraviolet misc Bias misc Chemical vapor deposition misc Metal organic chemical vapor deposition
topic_browse	ddc 530 bkl 33.60 bkl 51.00 misc heterojunctions misc AlGaN misc GaN misc phototransistors misc optical gain misc Sapphire misc Rejection misc Organic chemicals misc Phototransistors misc Dark current misc Structural analysis misc Substrates misc Ultraviolet misc Bias misc Chemical vapor deposition misc Metal organic chemical vapor deposition
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	s t st h w hw h w hw z w zw h j hj
hierarchy_parent_title	Physica status solidi. A, Applications and materials science
hierarchy_parent_id	129503932
dewey-tens	530 - Physics
hierarchy_top_title	Physica status solidi. A, Applications and materials science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129503932 (DE-600)208850-2 (DE-576)014907240
title	GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
ctrlnum	(DE-627)OLC199607301X (DE-599)GBVOLC199607301X (PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3 (KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp
title_full	GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
author_sort	Zhang, Lingxia
journal	Physica status solidi. A, Applications and materials science
journalStr	Physica status solidi. A, Applications and materials science
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2017
contenttype_str_mv	txt
author_browse	Zhang, Lingxia
container_volume	214
class	530 DE-101 33.60 bkl 51.00 bkl
format_se	Aufsätze
author-letter	Zhang, Lingxia
doi_str_mv	10.1002/pssa.201600821
dewey-full	530
title_sort	gan/al0.1ga0.9n‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
title_auth	GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
abstract	The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.
abstractGer	The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.
abstract_unstemmed	The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277
container_issue	8
title_short	GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
url	http://dx.doi.org/10.1002/pssa.201600821 http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract https://search.proquest.com/docview/1928491859
remote_bool	false
author2	Tang, Shaoji Wu, Hualong Wang, Hailong Wu, Zhisheng Jiang, Hao
author2Str	Tang, Shaoji Wu, Hualong Wang, Hailong Wu, Zhisheng Jiang, Hao
ppnlink	129503932
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth
doi_str	10.1002/pssa.201600821
up_date	2024-07-03T23:43:33.324Z
_version_	1803603372488523776
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC199607301X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230516114131.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">170901s2017 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1002/pssa.201600821</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170901</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC199607301X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC199607301X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)p1071-44339ebe86fc05b9b9faae51194c7bbd54265985bc4b5bab40d8a78b25e30d7a3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0092529220170000214000800000ganal01ga09nbasedvisibleblinddoubleheterojunctionp</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-101</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhang, Lingxia</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN/Al0.1Ga0.9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The fabrication and characterization of GaN/Al0.1Ga0.9N visible-blind ultraviolet double heterojunction phototransistors (DHPTs), grown by low-pressure metal organic chemical vapor deposition on sapphire substrates were reported in this paper. The fabricated DHPTs with a 150-µm-diameter active area exhibited very low dark currents below 1pA up to a bias voltage of 3V. High ultraviolet-to-visible rejection ratios of 1.9×104 and 1.2×102 were obtained at the bias voltages of 2 and 4V, respectively. Optical gain as high as 1.6×103 was achieved.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">heterojunctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlGaN</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GaN</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phototransistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">optical gain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sapphire</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rejection</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Organic chemicals</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Phototransistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dark current</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Structural analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Substrates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ultraviolet</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bias</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical vapor deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal organic chemical vapor deposition</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Shaoji</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Hualong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Hailong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Zhisheng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jiang, Hao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Physica status solidi. A, Applications and materials science</subfield><subfield code="d">Berlin : Wiley-VCH, 1970</subfield><subfield code="g">214(2017), 8</subfield><subfield code="w">(DE-627)129503932</subfield><subfield code="w">(DE-600)208850-2</subfield><subfield code="w">(DE-576)014907240</subfield><subfield code="x">1862-6300</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:214</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:8</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1002/pssa.201600821</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600821/abstract</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://search.proquest.com/docview/1928491859</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_267</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2018</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4277</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.60</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">214</subfield><subfield code="j">2017</subfield><subfield code="e">8</subfield></datafield></record></collection>
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