Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance

Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, l...
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Autor*in:	Zhao, Lei [verfasserIn] Liu, Qing Gao, Jing Zhang, Shujun Li, Jing‐Feng

Format:	Artikel
Sprache:	Englisch

Erschienen:	2017

Rechteinformationen:	Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

Schlagwörter:	energy storage antiferroelectric materials thermal stability lead‐free materials

Systematik:	UA 1538

Übergeordnetes Werk:	Enthalten in: Advanced materials - Weinheim : Wiley-VCH Verl., 1988, 29(2017), 31
Übergeordnetes Werk:	volume:29 ; year:2017 ; number:31

Links:	Volltext Link aufrufen

DOI / URN:	10.1002/adma.201701824

Katalog-ID:	OLC1996279556

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520			\|a Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity.
540			\|a Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
650		4	\|a energy storage
650		4	\|a antiferroelectric materials
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650		4	\|a lead‐free materials
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700	1		\|a Zhang, Shujun \|4 oth
700	1		\|a Li, Jing‐Feng \|4 oth
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allfields	10.1002/adma.201701824 doi PQ20170901 (DE-627)OLC1996279556 (DE-599)GBVOLC1996279556 (PRQ)p794-d8e44aa2eb3e290c26c72bf113ea93418967a60b786292b839290dd24c9a862d3 (KEY)0178503620170000029003100000leadfreeantiferroelectricsilverniobatetantalatewit DE-627 ger DE-627 rakwb eng 620 540 DE-101 540 AVZ UA 1538 AVZ rvk Zhao, Lei verfasserin aut Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim energy storage antiferroelectric materials thermal stability lead‐free materials Liu, Qing oth Gao, Jing oth Zhang, Shujun oth Li, Jing‐Feng oth Enthalten in Advanced materials Weinheim : Wiley-VCH Verl., 1988 29(2017), 31 (DE-627)130815152 (DE-600)1012489-5 (DE-576)023057149 0935-9648 nnns volume:29 year:2017 number:31 http://dx.doi.org/10.1002/adma.201701824 Volltext http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_95 GBV_ILN_267 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2095 GBV_ILN_4306 UA 1538 AR 29 2017 31
spelling	10.1002/adma.201701824 doi PQ20170901 (DE-627)OLC1996279556 (DE-599)GBVOLC1996279556 (PRQ)p794-d8e44aa2eb3e290c26c72bf113ea93418967a60b786292b839290dd24c9a862d3 (KEY)0178503620170000029003100000leadfreeantiferroelectricsilverniobatetantalatewit DE-627 ger DE-627 rakwb eng 620 540 DE-101 540 AVZ UA 1538 AVZ rvk Zhao, Lei verfasserin aut Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim energy storage antiferroelectric materials thermal stability lead‐free materials Liu, Qing oth Gao, Jing oth Zhang, Shujun oth Li, Jing‐Feng oth Enthalten in Advanced materials Weinheim : Wiley-VCH Verl., 1988 29(2017), 31 (DE-627)130815152 (DE-600)1012489-5 (DE-576)023057149 0935-9648 nnns volume:29 year:2017 number:31 http://dx.doi.org/10.1002/adma.201701824 Volltext http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_95 GBV_ILN_267 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2095 GBV_ILN_4306 UA 1538 AR 29 2017 31
allfields_unstemmed	10.1002/adma.201701824 doi PQ20170901 (DE-627)OLC1996279556 (DE-599)GBVOLC1996279556 (PRQ)p794-d8e44aa2eb3e290c26c72bf113ea93418967a60b786292b839290dd24c9a862d3 (KEY)0178503620170000029003100000leadfreeantiferroelectricsilverniobatetantalatewit DE-627 ger DE-627 rakwb eng 620 540 DE-101 540 AVZ UA 1538 AVZ rvk Zhao, Lei verfasserin aut Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim energy storage antiferroelectric materials thermal stability lead‐free materials Liu, Qing oth Gao, Jing oth Zhang, Shujun oth Li, Jing‐Feng oth Enthalten in Advanced materials Weinheim : Wiley-VCH Verl., 1988 29(2017), 31 (DE-627)130815152 (DE-600)1012489-5 (DE-576)023057149 0935-9648 nnns volume:29 year:2017 number:31 http://dx.doi.org/10.1002/adma.201701824 Volltext http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_95 GBV_ILN_267 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2095 GBV_ILN_4306 UA 1538 AR 29 2017 31
allfieldsGer	10.1002/adma.201701824 doi PQ20170901 (DE-627)OLC1996279556 (DE-599)GBVOLC1996279556 (PRQ)p794-d8e44aa2eb3e290c26c72bf113ea93418967a60b786292b839290dd24c9a862d3 (KEY)0178503620170000029003100000leadfreeantiferroelectricsilverniobatetantalatewit DE-627 ger DE-627 rakwb eng 620 540 DE-101 540 AVZ UA 1538 AVZ rvk Zhao, Lei verfasserin aut Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim energy storage antiferroelectric materials thermal stability lead‐free materials Liu, Qing oth Gao, Jing oth Zhang, Shujun oth Li, Jing‐Feng oth Enthalten in Advanced materials Weinheim : Wiley-VCH Verl., 1988 29(2017), 31 (DE-627)130815152 (DE-600)1012489-5 (DE-576)023057149 0935-9648 nnns volume:29 year:2017 number:31 http://dx.doi.org/10.1002/adma.201701824 Volltext http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_95 GBV_ILN_267 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2095 GBV_ILN_4306 UA 1538 AR 29 2017 31
allfieldsSound	10.1002/adma.201701824 doi PQ20170901 (DE-627)OLC1996279556 (DE-599)GBVOLC1996279556 (PRQ)p794-d8e44aa2eb3e290c26c72bf113ea93418967a60b786292b839290dd24c9a862d3 (KEY)0178503620170000029003100000leadfreeantiferroelectricsilverniobatetantalatewit DE-627 ger DE-627 rakwb eng 620 540 DE-101 540 AVZ UA 1538 AVZ rvk Zhao, Lei verfasserin aut Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim energy storage antiferroelectric materials thermal stability lead‐free materials Liu, Qing oth Gao, Jing oth Zhang, Shujun oth Li, Jing‐Feng oth Enthalten in Advanced materials Weinheim : Wiley-VCH Verl., 1988 29(2017), 31 (DE-627)130815152 (DE-600)1012489-5 (DE-576)023057149 0935-9648 nnns volume:29 year:2017 number:31 http://dx.doi.org/10.1002/adma.201701824 Volltext http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_95 GBV_ILN_267 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2018 GBV_ILN_2095 GBV_ILN_4306 UA 1538 AR 29 2017 31
language	English
source	Enthalten in Advanced materials 29(2017), 31 volume:29 year:2017 number:31
sourceStr	Enthalten in Advanced materials 29(2017), 31 volume:29 year:2017 number:31
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topic_facet	energy storage antiferroelectric materials thermal stability lead‐free materials
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container_title	Advanced materials
authorswithroles_txt_mv	Zhao, Lei @@aut@@ Liu, Qing @@oth@@ Gao, Jing @@oth@@ Zhang, Shujun @@oth@@ Li, Jing‐Feng @@oth@@
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Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. 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author	Zhao, Lei
spellingShingle	Zhao, Lei ddc 620 ddc 540 rvk UA 1538 misc energy storage misc antiferroelectric materials misc thermal stability misc lead‐free materials Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance
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topic_title	620 540 DE-101 540 AVZ UA 1538 AVZ rvk Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance energy storage antiferroelectric materials thermal stability lead‐free materials
topic	ddc 620 ddc 540 rvk UA 1538 misc energy storage misc antiferroelectric materials misc thermal stability misc lead‐free materials
topic_unstemmed	ddc 620 ddc 540 rvk UA 1538 misc energy storage misc antiferroelectric materials misc thermal stability misc lead‐free materials
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title	Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance
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title_full	Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance
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title_sort	lead‐free antiferroelectric silver niobate tantalate with high energy storage performance
title_auth	Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance
abstract	Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity.
abstractGer	Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity.
abstract_unstemmed	Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O 3 ‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO 3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm −3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO 3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO 3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm −1 versus 175 kV cm −1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density. AgNbO 3 lead‐free antiferroelectric ceramic is reported to be a promising candidate for energy storage applications. A great breakthrough with high recoverable energy density up to 4.2 J cm −3 and good thermal stability with minimal variation (±5%) over a temperature range of 20–120 °C is achieved in Ta‐modified AgNbO 3 ceramics. This is possible because of the enhanced dielectric breakdown strength and antiferroelectricity.
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container_issue	31
title_short	Lead‐Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance
url	http://dx.doi.org/10.1002/adma.201701824 http://onlinelibrary.wiley.com/doi/10.1002/adma.201701824/abstract
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