Moving towards the magnetoelectric graphene transistor

The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an a...
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Autor*in:	Cao, Shi [verfasserIn] Xiao, Zhiyong Kwan, Chun-Pui Zhang, Kai Bird, Jonathan P Wang, Lu Mei, Wai-Ning Hong, Xia Dowben, P. A

Format:	Artikel
Sprache:	Englisch

Erschienen:	2017

Rechteinformationen:	Nutzungsrecht: © Author(s)

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 111(2017), 18
Übergeordnetes Werk:	volume:111 ; year:2017 ; number:18

Links:	Volltext Link aufrufen

DOI / URN:	10.1063/1.4999643

Katalog-ID:	OLC1996832697

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allfields	10.1063/1.4999643 doi PQ20171125 (DE-627)OLC1996832697 (DE-599)GBVOLC1996832697 (PRQ)scitation_primary_10_1063_1_49996430 (KEY)0013165220170000111001800000movingtowardsthemagnetoelectricgraphenetransistor DE-627 ger DE-627 rakwb eng 530 DNB Cao, Shi verfasserin aut Moving towards the magnetoelectric graphene transistor 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications. Nutzungsrecht: © Author(s) Xiao, Zhiyong oth Kwan, Chun-Pui oth Zhang, Kai oth Bird, Jonathan P oth Wang, Lu oth Mei, Wai-Ning oth Hong, Xia oth Dowben, P. A oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 111(2017), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:111 year:2017 number:18 http://dx.doi.org/10.1063/1.4999643 Volltext http://dx.doi.org/10.1063/1.4999643 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 111 2017 18
spelling	10.1063/1.4999643 doi PQ20171125 (DE-627)OLC1996832697 (DE-599)GBVOLC1996832697 (PRQ)scitation_primary_10_1063_1_49996430 (KEY)0013165220170000111001800000movingtowardsthemagnetoelectricgraphenetransistor DE-627 ger DE-627 rakwb eng 530 DNB Cao, Shi verfasserin aut Moving towards the magnetoelectric graphene transistor 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications. Nutzungsrecht: © Author(s) Xiao, Zhiyong oth Kwan, Chun-Pui oth Zhang, Kai oth Bird, Jonathan P oth Wang, Lu oth Mei, Wai-Ning oth Hong, Xia oth Dowben, P. A oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 111(2017), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:111 year:2017 number:18 http://dx.doi.org/10.1063/1.4999643 Volltext http://dx.doi.org/10.1063/1.4999643 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 111 2017 18
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allfieldsGer	10.1063/1.4999643 doi PQ20171125 (DE-627)OLC1996832697 (DE-599)GBVOLC1996832697 (PRQ)scitation_primary_10_1063_1_49996430 (KEY)0013165220170000111001800000movingtowardsthemagnetoelectricgraphenetransistor DE-627 ger DE-627 rakwb eng 530 DNB Cao, Shi verfasserin aut Moving towards the magnetoelectric graphene transistor 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications. Nutzungsrecht: © Author(s) Xiao, Zhiyong oth Kwan, Chun-Pui oth Zhang, Kai oth Bird, Jonathan P oth Wang, Lu oth Mei, Wai-Ning oth Hong, Xia oth Dowben, P. A oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 111(2017), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:111 year:2017 number:18 http://dx.doi.org/10.1063/1.4999643 Volltext http://dx.doi.org/10.1063/1.4999643 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 111 2017 18
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abstract	The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.
abstractGer	The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.
abstract_unstemmed	The interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.
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up_date	2024-07-04T01:30:07.792Z
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