Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement
Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Gongjin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Physica status solidi. A, Applications and materials science - Berlin : Wiley-VCH, 1970, 214(2017), 10 |
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| Übergeordnetes Werk: |
volume:214 ; year:2017 ; number:10 |
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| DOI / URN: |
10.1002/pssa.201700295 |
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| 520 | |a Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. | ||
| 540 | |a Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim | ||
| 650 | 4 | |a ultrathin‐silicon | |
| 650 | 4 | |a light trapping | |
| 650 | 4 | |a dielectric microsphere | |
| 650 | 4 | |a photodetector | |
| 650 | 4 | |a Silicon | |
| 650 | 4 | |a Photonics | |
| 650 | 4 | |a Broadband | |
| 650 | 4 | |a Optical properties | |
| 650 | 4 | |a Optoelectronic devices | |
| 650 | 4 | |a Microspheres | |
| 650 | 4 | |a Electromagnetic absorption | |
| 650 | 4 | |a Polystyrene resins | |
| 650 | 4 | |a Nanomaterials | |
| 650 | 4 | |a Self assembly | |
| 650 | 4 | |a Photometers | |
| 650 | 4 | |a Incident light | |
| 650 | 4 | |a Concentrators | |
| 700 | 1 | |a Guo, Qinglei |4 oth | |
| 700 | 1 | |a Fang, Yangfu |4 oth | |
| 700 | 1 | |a Tang, Shiwei |4 oth | |
| 700 | 1 | |a Liu, Minjie |4 oth | |
| 700 | 1 | |a Huang, Gaoshan |4 oth | |
| 700 | 1 | |a Mei, Yongfeng |4 oth | |
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10.1002/pssa.201700295 doi PQ20171125 (DE-627)OLC199760261X (DE-599)GBVOLC199760261X (PRQ)p1435-d91c4bedf1b2b3d7a50eb142baa11fd4798d2dc166b5c81632ed29c5f235939e3 (KEY)0092529220170000214001000000selfassembleddielectricmicrosphereaslightconcentra DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Li, Gongjin verfasserin aut Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators Guo, Qinglei oth Fang, Yangfu oth Tang, Shiwei oth Liu, Minjie oth Huang, Gaoshan oth Mei, Yongfeng oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 10 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:10 http://dx.doi.org/10.1002/pssa.201700295 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700295/abstract https://search.proquest.com/docview/1949916426 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 10 |
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10.1002/pssa.201700295 doi PQ20171125 (DE-627)OLC199760261X (DE-599)GBVOLC199760261X (PRQ)p1435-d91c4bedf1b2b3d7a50eb142baa11fd4798d2dc166b5c81632ed29c5f235939e3 (KEY)0092529220170000214001000000selfassembleddielectricmicrosphereaslightconcentra DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Li, Gongjin verfasserin aut Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators Guo, Qinglei oth Fang, Yangfu oth Tang, Shiwei oth Liu, Minjie oth Huang, Gaoshan oth Mei, Yongfeng oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 10 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:10 http://dx.doi.org/10.1002/pssa.201700295 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700295/abstract https://search.proquest.com/docview/1949916426 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 10 |
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10.1002/pssa.201700295 doi PQ20171125 (DE-627)OLC199760261X (DE-599)GBVOLC199760261X (PRQ)p1435-d91c4bedf1b2b3d7a50eb142baa11fd4798d2dc166b5c81632ed29c5f235939e3 (KEY)0092529220170000214001000000selfassembleddielectricmicrosphereaslightconcentra DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Li, Gongjin verfasserin aut Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators Guo, Qinglei oth Fang, Yangfu oth Tang, Shiwei oth Liu, Minjie oth Huang, Gaoshan oth Mei, Yongfeng oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 10 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:10 http://dx.doi.org/10.1002/pssa.201700295 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700295/abstract https://search.proquest.com/docview/1949916426 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 10 |
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10.1002/pssa.201700295 doi PQ20171125 (DE-627)OLC199760261X (DE-599)GBVOLC199760261X (PRQ)p1435-d91c4bedf1b2b3d7a50eb142baa11fd4798d2dc166b5c81632ed29c5f235939e3 (KEY)0092529220170000214001000000selfassembleddielectricmicrosphereaslightconcentra DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Li, Gongjin verfasserin aut Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators Guo, Qinglei oth Fang, Yangfu oth Tang, Shiwei oth Liu, Minjie oth Huang, Gaoshan oth Mei, Yongfeng oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 10 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:10 http://dx.doi.org/10.1002/pssa.201700295 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700295/abstract https://search.proquest.com/docview/1949916426 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 10 |
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10.1002/pssa.201700295 doi PQ20171125 (DE-627)OLC199760261X (DE-599)GBVOLC199760261X (PRQ)p1435-d91c4bedf1b2b3d7a50eb142baa11fd4798d2dc166b5c81632ed29c5f235939e3 (KEY)0092529220170000214001000000selfassembleddielectricmicrosphereaslightconcentra DE-627 ger DE-627 rakwb eng 530 DE-101 33.60 bkl 51.00 bkl Li, Gongjin verfasserin aut Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. Nutzungsrecht: © 2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators Guo, Qinglei oth Fang, Yangfu oth Tang, Shiwei oth Liu, Minjie oth Huang, Gaoshan oth Mei, Yongfeng oth Enthalten in Physica status solidi. A, Applications and materials science Berlin : Wiley-VCH, 1970 214(2017), 10 (DE-627)129503932 (DE-600)208850-2 (DE-576)014907240 1862-6300 nnns volume:214 year:2017 number:10 http://dx.doi.org/10.1002/pssa.201700295 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700295/abstract https://search.proquest.com/docview/1949916426 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_23 GBV_ILN_70 GBV_ILN_267 GBV_ILN_2018 GBV_ILN_4277 33.60 AVZ 51.00 AVZ AR 214 2017 10 |
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530 DE-101 33.60 bkl 51.00 bkl Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement ultrathin‐silicon light trapping dielectric microsphere photodetector Silicon Photonics Broadband Optical properties Optoelectronic devices Microspheres Electromagnetic absorption Polystyrene resins Nanomaterials Self assembly Photometers Incident light Concentrators |
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Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement |
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Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. |
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Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. |
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Owning to their superior electronic and optical properties, silicon nanomembranes (NMs) have attracted considerable attention to be exploited as fundamental building blocks for the applications in electronics, photonics, and optoelectronics. Nevertheless, small photon traveling distance in such ultra-thin silicon (UT-Si) nanomembranes with nanoscale thicknesses (50nm) induces low total light absorption, which is crucial for optoelectronic applications. Here, a convenient and controllable strategy, involving self-assembly of dielectric polystyrene (PS) microsphere array on UT-Si, was proposed to enhance optoelectronic responses of UT-Si-based photodetectors in broadband. Scattering effect of PS microspheres facilitates to couple incident light into UT-Si layer, thus enhancing the light absorption. UT-Si-based metal-semiconductor-metal (MSM) photodetectors with a PS microspehere array demonstrate significant enhancement in optoelectronic response compared with the photodetector without PS microspeheres. Furthermore, the response spectrum can be controllably tuned by adjusting the size of paved microspeheres. This research may provide a practical and cost-efficient approach for enhancing the optoelectronic responses of nanomaterials with nanoscale thicknesses, thus expediting their potential applications in optoelectronic devices. |
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Self‐assembled dielectric microsphere as light concentrators for ultrathin‐silicon‐based photodetectors with broadband enhancement |
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