Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method
A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated...
Ausführliche Beschreibung
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| Autor*in: |
Chen, Yuanqing [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, PP, 99, Seite 1-1 |
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| Übergeordnetes Werk: |
volume:PP ; number:99 ; pages:1-1 |
| Links: |
|---|
| DOI / URN: |
10.1109/LED.2017.2756444 |
|---|
| Katalog-ID: |
OLC1997634368 |
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| 520 | |a A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability. | ||
| 650 | 4 | |a Titanium oxide | |
| 650 | 4 | |a Switching circuits | |
| 650 | 4 | |a Resistance | |
| 650 | 4 | |a Performance evaluation | |
| 650 | 4 | |a Radiation effects | |
| 650 | 4 | |a Switches | |
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| 650 | 4 | |a deep ultraviolet irradiation | |
| 650 | 4 | |a Films | |
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| 700 | 1 | |a Li, Na |4 oth | |
| 700 | 1 | |a Zhao, Zhao |4 oth | |
| 700 | 1 | |a Qu, Wenwen |4 oth | |
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10.1109/LED.2017.2756444 doi PQ20171228 (DE-627)OLC1997634368 (DE-599)GBVOLC1997634368 (PRQ)i655-d47904bc05ad2f44c2624f4097805f8717a26fd9b29f13624ddc44f524a80a050 (KEY)0101063800000000000009900001resistiveswitchingcharacteristicsofflexibletiothin DE-627 ger DE-627 rakwb eng 620 DE-600 Chen, Yuanqing verfasserin aut Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability. Titanium oxide Switching circuits Resistance Performance evaluation Radiation effects Switches Temperature resistive switching deep ultraviolet irradiation Films Li, Lingwei oth Yin, Xiaoru oth Yerramilli, Aditya oth Shen, Yuxia oth Song, Yang oth Bian, Weibai oth Li, Na oth Zhao, Zhao oth Qu, Wenwen oth Theodore, N. David oth Alford, T. L oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 PP, 99, Seite 1-1 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:PP number:99 pages:1-1 http://dx.doi.org/10.1109/LED.2017.2756444 Volltext http://ieeexplore.ieee.org/document/8049388 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_2004 AR PP 99 1-1 |
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Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method |
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Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method |
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Chen, Yuanqing |
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resistive switching characteristics of flexible tio₂ thin film fabricated by deep ultraviolet photochemical solution method |
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Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method |
| abstract |
A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability. |
| abstractGer |
A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability. |
| abstract_unstemmed |
A novel ultraviolet photochemical method was used to prepare TiO2 resistive-switching films. Amorphous TiO2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO2/ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching, and 1000 cycles of bending. These findings indicate that these devices have good flexibility, retention characteristics, switch-cycle repeatability and bend-cycle repeatability. |
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| title_short |
Resistive Switching Characteristics of Flexible TiO₂ Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method |
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http://dx.doi.org/10.1109/LED.2017.2756444 http://ieeexplore.ieee.org/document/8049388 |
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Li, Lingwei Yin, Xiaoru Yerramilli, Aditya Shen, Yuxia Song, Yang Bian, Weibai Li, Na Zhao, Zhao Qu, Wenwen Theodore, N. David Alford, T. L |
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Li, Lingwei Yin, Xiaoru Yerramilli, Aditya Shen, Yuxia Song, Yang Bian, Weibai Li, Na Zhao, Zhao Qu, Wenwen Theodore, N. David Alford, T. L |
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