Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth
Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a later...
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| Autor*in: |
Steindl, Bernhard [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) |
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| Übergeordnetes Werk: |
Enthalten in: Optical engineering - Bellingham, Wash. : SPIE, 1972, 56(2017), 11 |
|---|---|
| Übergeordnetes Werk: |
volume:56 ; year:2017 ; number:11 |
| Links: |
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| DOI / URN: |
10.1117/1.OE.56.11.110501 |
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| 520 | |a Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. | ||
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| 700 | 1 | |a Zimmermann, Horst |4 oth | |
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10.1117/1.OE.56.11.110501 doi PQ20171228 (DE-627)OLC1998850986 (DE-599)GBVOLC1998850986 (PRQ)spie_journals_10_1117_1_OE_56_11_1105010 (KEY)0033287920170000056001100000optimizedsiliconcmosreachthroughavalanchephotodiod DE-627 ger DE-627 rakwb eng 620 530 DNB Steindl, Bernhard verfasserin aut Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. Nutzungsrecht: © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) Jukić, Tomislav oth Zimmermann, Horst oth Enthalten in Optical engineering Bellingham, Wash. : SPIE, 1972 56(2017), 11 (DE-627)129395315 (DE-600)185526-8 (DE-576)014779536 0036-1860 nnns volume:56 year:2017 number:11 http://dx.doi.org/10.1117/1.OE.56.11.110501 Volltext http://www.dx.doi.org/10.1117/1.OE.56.11.110501 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_47 GBV_ILN_70 GBV_ILN_91 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2286 GBV_ILN_4318 AR 56 2017 11 |
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10.1117/1.OE.56.11.110501 doi PQ20171228 (DE-627)OLC1998850986 (DE-599)GBVOLC1998850986 (PRQ)spie_journals_10_1117_1_OE_56_11_1105010 (KEY)0033287920170000056001100000optimizedsiliconcmosreachthroughavalanchephotodiod DE-627 ger DE-627 rakwb eng 620 530 DNB Steindl, Bernhard verfasserin aut Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. Nutzungsrecht: © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) Jukić, Tomislav oth Zimmermann, Horst oth Enthalten in Optical engineering Bellingham, Wash. : SPIE, 1972 56(2017), 11 (DE-627)129395315 (DE-600)185526-8 (DE-576)014779536 0036-1860 nnns volume:56 year:2017 number:11 http://dx.doi.org/10.1117/1.OE.56.11.110501 Volltext http://www.dx.doi.org/10.1117/1.OE.56.11.110501 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_47 GBV_ILN_70 GBV_ILN_91 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2286 GBV_ILN_4318 AR 56 2017 11 |
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10.1117/1.OE.56.11.110501 doi PQ20171228 (DE-627)OLC1998850986 (DE-599)GBVOLC1998850986 (PRQ)spie_journals_10_1117_1_OE_56_11_1105010 (KEY)0033287920170000056001100000optimizedsiliconcmosreachthroughavalanchephotodiod DE-627 ger DE-627 rakwb eng 620 530 DNB Steindl, Bernhard verfasserin aut Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. Nutzungsrecht: © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) Jukić, Tomislav oth Zimmermann, Horst oth Enthalten in Optical engineering Bellingham, Wash. : SPIE, 1972 56(2017), 11 (DE-627)129395315 (DE-600)185526-8 (DE-576)014779536 0036-1860 nnns volume:56 year:2017 number:11 http://dx.doi.org/10.1117/1.OE.56.11.110501 Volltext http://www.dx.doi.org/10.1117/1.OE.56.11.110501 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_47 GBV_ILN_70 GBV_ILN_91 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2286 GBV_ILN_4318 AR 56 2017 11 |
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10.1117/1.OE.56.11.110501 doi PQ20171228 (DE-627)OLC1998850986 (DE-599)GBVOLC1998850986 (PRQ)spie_journals_10_1117_1_OE_56_11_1105010 (KEY)0033287920170000056001100000optimizedsiliconcmosreachthroughavalanchephotodiod DE-627 ger DE-627 rakwb eng 620 530 DNB Steindl, Bernhard verfasserin aut Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. Nutzungsrecht: © 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) Jukić, Tomislav oth Zimmermann, Horst oth Enthalten in Optical engineering Bellingham, Wash. : SPIE, 1972 56(2017), 11 (DE-627)129395315 (DE-600)185526-8 (DE-576)014779536 0036-1860 nnns volume:56 year:2017 number:11 http://dx.doi.org/10.1117/1.OE.56.11.110501 Volltext http://www.dx.doi.org/10.1117/1.OE.56.11.110501 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_47 GBV_ILN_70 GBV_ILN_91 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2286 GBV_ILN_4318 AR 56 2017 11 |
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Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth |
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Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. |
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Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. |
| abstract_unstemmed |
Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modulation-doping technique is presented. The increased operating voltage of the presented device leads to a −3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-μW optical power. This corresponds to a responsivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficiency of 72.2% at 635-nm wavelength. |
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| container_issue |
11 |
| title_short |
Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth |
| url |
http://dx.doi.org/10.1117/1.OE.56.11.110501 http://www.dx.doi.org/10.1117/1.OE.56.11.110501 |
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| author2 |
Jukić, Tomislav Zimmermann, Horst |
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| doi_str |
10.1117/1.OE.56.11.110501 |
| up_date |
2024-07-04T05:51:09.838Z |
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