Study of spiral growth on 4H-silicon carbide on-axis substrates

Gespeichert in:

Autor*in:	Masumoto, Keiko [verfasserIn] Kojima, Kazutoshi Okumura, Hajime

Format:	Artikel
Sprache:	Englisch

Erschienen:	2017

Rechteinformationen:	Nutzungsrecht: © Elsevier B.V.

Schlagwörter:	A1. Growth models A1. Surfaces A3. Chemical vapor deposition processes B2. Semiconducting silicon compounds

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 475(2017), Seite 251-255
Übergeordnetes Werk:	volume:475 ; year:2017 ; pages:251-255

Links:	Volltext Link aufrufen

DOI / URN:	10.1016/j.jcrysgro.2017.06.028

Katalog-ID:	OLC1999010396

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title	Study of spiral growth on 4H-silicon carbide on-axis substrates
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Study of spiral growth on 4H-silicon carbide on-axis substrates

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