Reliability-enhanced Separated Pre-charge Sensing Amplifier for Hybrid CMOS/MTJ Logic Circuits

Benefitting from its non-volatility, low power, high speed, nearly infinite endurance, good scalability and great CMOS compatibility, magnetic tunnel junction (MTJ) embedded in conventional CMOS logic circuits has been proposed as one potentially powerful solution to introduce non-volatility in toda...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Zhang, Deming [verfasserIn]

Zeng, Lang

Gao, Tianqi

Gong, Fanghui

Qin, Xiaowan

Kang, Wang

Zhang, Yue

ZHANG, Youguang

Klein, Jacques Olivier

ZHAO, Weisheng

Format:

Artikel

Sprache:

Englisch

Erschienen:

2017

Schlagwörter:

Logic circuits

Resistance

Sensors

Sensing reliability

Magnetic tunnel junction (MTJ)

hybrid CMOS/MTJ logic circuit

Discharges (electric)

Non-volatility

Integrated circuit reliability

Magnetic tunneling

Magnetic tunnel junctions

Usage

Complementary metal oxide semiconductors

Übergeordnetes Werk:

Enthalten in: IEEE transactions on magnetics - New York, NY : IEEE, 1965, PP(2017), 99, Seite 1-1

Übergeordnetes Werk:

volume:PP ; year:2017 ; number:99 ; pages:1-1

Links:

Volltext
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DOI / URN:

10.1109/TMAG.2017.2702743

Katalog-ID:

OLC1999024559

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