ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics
Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without chang...
Ausführliche Beschreibung
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| Autor*in: |
Geng, Xiao‐Yu [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © 2017 The American Ceramic Society |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the American Ceramic Society - Malden [u.a.] : Blackwell Publishing, 1918, 100(2017), 12, Seite 5659-5667 |
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| Übergeordnetes Werk: |
volume:100 ; year:2017 ; number:12 ; pages:5659-5667 |
| Links: |
|---|
| DOI / URN: |
10.1111/jace.15090 |
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OLC1999225813 |
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| 520 | |a Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. | ||
| 540 | |a Nutzungsrecht: © 2017 The American Ceramic Society | ||
| 650 | 4 | |a lead‐free ceramics | |
| 650 | 4 | |a ferroelectricity/ferroelectric materials | |
| 650 | 4 | |a composites | |
| 650 | 4 | |a Piezoelectricity | |
| 650 | 4 | |a Zinc oxide | |
| 650 | 4 | |a Ferroelectric materials | |
| 650 | 4 | |a Crystal structure | |
| 650 | 4 | |a Ferroelectric domains | |
| 650 | 4 | |a Ferroelectrics | |
| 650 | 4 | |a Thermal stability | |
| 650 | 4 | |a Lead free | |
| 650 | 4 | |a Electrical properties | |
| 650 | 4 | |a Depolarization | |
| 700 | 1 | |a Zhang, Ji |4 oth | |
| 700 | 1 | |a Wang, Rui‐Xue |4 oth | |
| 700 | 1 | |a Deng, Xian‐Zhu |4 oth | |
| 700 | 1 | |a Sun, Lei |4 oth | |
| 700 | 1 | |a Gu, Zheng‐Bin |4 oth | |
| 700 | 1 | |a Zhang, Shan‐Tao |4 oth | |
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10.1111/jace.15090 doi PQ20171228 (DE-627)OLC1999225813 (DE-599)GBVOLC1999225813 (PRQ)p1719-fac91d0633bd36e5db3141b284617de7f2a3e3f1167c552a4f83506b9c2dd0b30 (KEY)0108608120170000100001205659znoenhancedelectricalpropertiesofbi05na05tio3based DE-627 ger DE-627 rakwb eng 660 DE-101 Geng, Xiao‐Yu verfasserin aut ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. Nutzungsrecht: © 2017 The American Ceramic Society lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization Zhang, Ji oth Wang, Rui‐Xue oth Deng, Xian‐Zhu oth Sun, Lei oth Gu, Zheng‐Bin oth Zhang, Shan‐Tao oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 12, Seite 5659-5667 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:12 pages:5659-5667 http://dx.doi.org/10.1111/jace.15090 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract https://search.proquest.com/docview/1949966474 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 12 5659-5667 |
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10.1111/jace.15090 doi PQ20171228 (DE-627)OLC1999225813 (DE-599)GBVOLC1999225813 (PRQ)p1719-fac91d0633bd36e5db3141b284617de7f2a3e3f1167c552a4f83506b9c2dd0b30 (KEY)0108608120170000100001205659znoenhancedelectricalpropertiesofbi05na05tio3based DE-627 ger DE-627 rakwb eng 660 DE-101 Geng, Xiao‐Yu verfasserin aut ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. Nutzungsrecht: © 2017 The American Ceramic Society lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization Zhang, Ji oth Wang, Rui‐Xue oth Deng, Xian‐Zhu oth Sun, Lei oth Gu, Zheng‐Bin oth Zhang, Shan‐Tao oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 12, Seite 5659-5667 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:12 pages:5659-5667 http://dx.doi.org/10.1111/jace.15090 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract https://search.proquest.com/docview/1949966474 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 12 5659-5667 |
| allfields_unstemmed |
10.1111/jace.15090 doi PQ20171228 (DE-627)OLC1999225813 (DE-599)GBVOLC1999225813 (PRQ)p1719-fac91d0633bd36e5db3141b284617de7f2a3e3f1167c552a4f83506b9c2dd0b30 (KEY)0108608120170000100001205659znoenhancedelectricalpropertiesofbi05na05tio3based DE-627 ger DE-627 rakwb eng 660 DE-101 Geng, Xiao‐Yu verfasserin aut ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. Nutzungsrecht: © 2017 The American Ceramic Society lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization Zhang, Ji oth Wang, Rui‐Xue oth Deng, Xian‐Zhu oth Sun, Lei oth Gu, Zheng‐Bin oth Zhang, Shan‐Tao oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 12, Seite 5659-5667 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:12 pages:5659-5667 http://dx.doi.org/10.1111/jace.15090 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract https://search.proquest.com/docview/1949966474 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 12 5659-5667 |
| allfieldsGer |
10.1111/jace.15090 doi PQ20171228 (DE-627)OLC1999225813 (DE-599)GBVOLC1999225813 (PRQ)p1719-fac91d0633bd36e5db3141b284617de7f2a3e3f1167c552a4f83506b9c2dd0b30 (KEY)0108608120170000100001205659znoenhancedelectricalpropertiesofbi05na05tio3based DE-627 ger DE-627 rakwb eng 660 DE-101 Geng, Xiao‐Yu verfasserin aut ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. Nutzungsrecht: © 2017 The American Ceramic Society lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization Zhang, Ji oth Wang, Rui‐Xue oth Deng, Xian‐Zhu oth Sun, Lei oth Gu, Zheng‐Bin oth Zhang, Shan‐Tao oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 12, Seite 5659-5667 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:12 pages:5659-5667 http://dx.doi.org/10.1111/jace.15090 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract https://search.proquest.com/docview/1949966474 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 12 5659-5667 |
| allfieldsSound |
10.1111/jace.15090 doi PQ20171228 (DE-627)OLC1999225813 (DE-599)GBVOLC1999225813 (PRQ)p1719-fac91d0633bd36e5db3141b284617de7f2a3e3f1167c552a4f83506b9c2dd0b30 (KEY)0108608120170000100001205659znoenhancedelectricalpropertiesofbi05na05tio3based DE-627 ger DE-627 rakwb eng 660 DE-101 Geng, Xiao‐Yu verfasserin aut ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. Nutzungsrecht: © 2017 The American Ceramic Society lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization Zhang, Ji oth Wang, Rui‐Xue oth Deng, Xian‐Zhu oth Sun, Lei oth Gu, Zheng‐Bin oth Zhang, Shan‐Tao oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 100(2017), 12, Seite 5659-5667 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:100 year:2017 number:12 pages:5659-5667 http://dx.doi.org/10.1111/jace.15090 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract https://search.proquest.com/docview/1949966474 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 AR 100 2017 12 5659-5667 |
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Enthalten in Journal of the American Ceramic Society 100(2017), 12, Seite 5659-5667 volume:100 year:2017 number:12 pages:5659-5667 |
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Geng, Xiao‐Yu @@aut@@ Zhang, Ji @@oth@@ Wang, Rui‐Xue @@oth@@ Deng, Xian‐Zhu @@oth@@ Sun, Lei @@oth@@ Gu, Zheng‐Bin @@oth@@ Zhang, Shan‐Tao @@oth@@ |
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Geng, Xiao‐Yu |
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Geng, Xiao‐Yu ddc 660 misc lead‐free ceramics misc ferroelectricity/ferroelectric materials misc composites misc Piezoelectricity misc Zinc oxide misc Ferroelectric materials misc Crystal structure misc Ferroelectric domains misc Ferroelectrics misc Thermal stability misc Lead free misc Electrical properties misc Depolarization ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics |
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660 DE-101 ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics lead‐free ceramics ferroelectricity/ferroelectric materials composites Piezoelectricity Zinc oxide Ferroelectric materials Crystal structure Ferroelectric domains Ferroelectrics Thermal stability Lead free Electrical properties Depolarization |
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zno‐enhanced electrical properties of bi0.5na0.5tio3‐based incipient ferroelectrics |
| title_auth |
ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics |
| abstract |
Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. |
| abstractGer |
Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. |
| abstract_unstemmed |
Bi 0.5 Na 0.5 TiO 3 ‐based incipient ferroelectrics with pseudocubic structure generally show weak ferro‐/piezoelectricity but giant field‐induced strains. It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics. |
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| title_short |
ZnO‐enhanced electrical properties of Bi0.5Na0.5TiO3‐based incipient ferroelectrics |
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Zhang, Ji Wang, Rui‐Xue Deng, Xian‐Zhu Sun, Lei Gu, Zheng‐Bin Zhang, Shan‐Tao |
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It is difficult to artificially and smoothly improve the electrical property based on conventional chemical doping or substituting without changing the crystal structure and suppressing the strain. Here, by introducing the semiconductor ZnO into the lead‐free incipient ferroelectric ((Bi 0.5 (Na 0.84 K 0.16 ) 0.5 ) 0.96 Sr 0.04 )(Ti 0.975 Nb 0.025 )O 3 (BNT–2.5Nb) to form 0‐3 type composites ( BNT –2.5Nb: x ZnO ), we experimentally illustrate that the resistance and ferro‐/piezoelectric properties can be enhanced significantly with an unchanged crystal structure and only slightly suppressed strains. For example, the remanent polarization and piezoelectric coefficient increase from 4.6 μC/cm 2 and 8 pC/N for x =0 to 9.0 μC/cm 2 and 31 pC /N for x =0.3. At the same time, the total strain only decreases from 0.140% for x =0 to 0.108% for x =0.3, whereas the negative strain increases from −0.003% for x =0 to −0.010% for x =0.3. And the thermal stability of d 33 is enhanced. The corresponding mechanism is attributed to that ZnO can form a local field, preventing the depolarization of field induced macroscopic ferroelectric domains. Our results not only provide a feasible way to tune electrical properties of BNT ‐based incipient ferroelectrics, but also may stimulate further work on artificially structured high‐performance ferroelectrics.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © 2017 The American Ceramic Society</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">lead‐free ceramics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ferroelectricity/ferroelectric materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">composites</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Piezoelectricity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Zinc oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric domains</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectrics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermal stability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Lead free</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Depolarization</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Ji</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Rui‐Xue</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Deng, Xian‐Zhu</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, Lei</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gu, Zheng‐Bin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Shan‐Tao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of the American Ceramic Society</subfield><subfield code="d">Malden [u.a.] : Blackwell Publishing, 1918</subfield><subfield code="g">100(2017), 12, Seite 5659-5667</subfield><subfield code="w">(DE-627)129550272</subfield><subfield code="w">(DE-600)219232-9</subfield><subfield code="w">(DE-576)015003671</subfield><subfield code="x">0002-7820</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:100</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:5659-5667</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1111/jace.15090</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://onlinelibrary.wiley.com/doi/10.1111/jace.15090/abstract</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">https://search.proquest.com/docview/1949966474</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-DE-84</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">100</subfield><subfield code="j">2017</subfield><subfield code="e">12</subfield><subfield code="h">5659-5667</subfield></datafield></record></collection>
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