Determination of the p-spray profile for n+p silicon sensors using a MOSFET
The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this i...
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| Autor*in: |
Fretwurst, E [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Rechteinformationen: |
Nutzungsrecht: © Elsevier B.V. |
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| Übergeordnetes Werk: |
Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 866(2017), Seite 140-149 |
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| Übergeordnetes Werk: |
volume:866 ; year:2017 ; pages:140-149 |
| Links: |
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| DOI / URN: |
10.1016/j.nima.2017.05.046 |
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| 520 | |a The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. | ||
| 540 | |a Nutzungsrecht: © Elsevier B.V. | ||
| 650 | 4 | |a Silicon pixel sensor | |
| 650 | 4 | |a [formula omitted]-type silicon | |
| 650 | 4 | |a [formula omitted]-spray | |
| 650 | 4 | |a Doping profile | |
| 650 | 4 | |a MOSFET | |
| 650 | 4 | |a TCAD simulations | |
| 650 | 4 | |a Instrumentation and Detectors | |
| 650 | 4 | |a Physics | |
| 700 | 1 | |a Garutti, E |4 oth | |
| 700 | 1 | |a Klanner, R |4 oth | |
| 700 | 1 | |a Kopsalis, I |4 oth | |
| 700 | 1 | |a Schwandt, J |4 oth | |
| 700 | 1 | |a Weberpals, M |4 oth | |
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10.1016/j.nima.2017.05.046 doi PQ20171228 (DE-627)OLC1999323637 (DE-599)GBVOLC1999323637 (PRQ)a1631-6ba969e31355510318d74d1d69d17bb3a022ce2e4c6fd956bff245c6deeca8320 (KEY)0136675020170000866000000140determinationofthepsprayprofilefornpsiliconsensors DE-627 ger DE-627 rakwb eng 530 DE-600 UA 5680. AVZ rvk Fretwurst, E verfasserin aut Determination of the p-spray profile for n+p silicon sensors using a MOSFET 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. Nutzungsrecht: © Elsevier B.V. Silicon pixel sensor [formula omitted]-type silicon [formula omitted]-spray Doping profile MOSFET TCAD simulations Instrumentation and Detectors Physics Garutti, E oth Klanner, R oth Kopsalis, I oth Schwandt, J oth Weberpals, M oth Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 866(2017), Seite 140-149 (DE-627)129862134 (DE-600)283627-0 (DE-576)015173461 0167-5087 nnns volume:866 year:2017 pages:140-149 http://dx.doi.org/10.1016/j.nima.2017.05.046 Volltext https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 UA 5680. AR 866 2017 140-149 |
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10.1016/j.nima.2017.05.046 doi PQ20171228 (DE-627)OLC1999323637 (DE-599)GBVOLC1999323637 (PRQ)a1631-6ba969e31355510318d74d1d69d17bb3a022ce2e4c6fd956bff245c6deeca8320 (KEY)0136675020170000866000000140determinationofthepsprayprofilefornpsiliconsensors DE-627 ger DE-627 rakwb eng 530 DE-600 UA 5680. AVZ rvk Fretwurst, E verfasserin aut Determination of the p-spray profile for n+p silicon sensors using a MOSFET 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. Nutzungsrecht: © Elsevier B.V. Silicon pixel sensor [formula omitted]-type silicon [formula omitted]-spray Doping profile MOSFET TCAD simulations Instrumentation and Detectors Physics Garutti, E oth Klanner, R oth Kopsalis, I oth Schwandt, J oth Weberpals, M oth Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 866(2017), Seite 140-149 (DE-627)129862134 (DE-600)283627-0 (DE-576)015173461 0167-5087 nnns volume:866 year:2017 pages:140-149 http://dx.doi.org/10.1016/j.nima.2017.05.046 Volltext https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 UA 5680. AR 866 2017 140-149 |
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10.1016/j.nima.2017.05.046 doi PQ20171228 (DE-627)OLC1999323637 (DE-599)GBVOLC1999323637 (PRQ)a1631-6ba969e31355510318d74d1d69d17bb3a022ce2e4c6fd956bff245c6deeca8320 (KEY)0136675020170000866000000140determinationofthepsprayprofilefornpsiliconsensors DE-627 ger DE-627 rakwb eng 530 DE-600 UA 5680. AVZ rvk Fretwurst, E verfasserin aut Determination of the p-spray profile for n+p silicon sensors using a MOSFET 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. Nutzungsrecht: © Elsevier B.V. Silicon pixel sensor [formula omitted]-type silicon [formula omitted]-spray Doping profile MOSFET TCAD simulations Instrumentation and Detectors Physics Garutti, E oth Klanner, R oth Kopsalis, I oth Schwandt, J oth Weberpals, M oth Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 866(2017), Seite 140-149 (DE-627)129862134 (DE-600)283627-0 (DE-576)015173461 0167-5087 nnns volume:866 year:2017 pages:140-149 http://dx.doi.org/10.1016/j.nima.2017.05.046 Volltext https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 UA 5680. AR 866 2017 140-149 |
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10.1016/j.nima.2017.05.046 doi PQ20171228 (DE-627)OLC1999323637 (DE-599)GBVOLC1999323637 (PRQ)a1631-6ba969e31355510318d74d1d69d17bb3a022ce2e4c6fd956bff245c6deeca8320 (KEY)0136675020170000866000000140determinationofthepsprayprofilefornpsiliconsensors DE-627 ger DE-627 rakwb eng 530 DE-600 UA 5680. AVZ rvk Fretwurst, E verfasserin aut Determination of the p-spray profile for n+p silicon sensors using a MOSFET 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. Nutzungsrecht: © Elsevier B.V. Silicon pixel sensor [formula omitted]-type silicon [formula omitted]-spray Doping profile MOSFET TCAD simulations Instrumentation and Detectors Physics Garutti, E oth Klanner, R oth Kopsalis, I oth Schwandt, J oth Weberpals, M oth Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 866(2017), Seite 140-149 (DE-627)129862134 (DE-600)283627-0 (DE-576)015173461 0167-5087 nnns volume:866 year:2017 pages:140-149 http://dx.doi.org/10.1016/j.nima.2017.05.046 Volltext https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 UA 5680. AR 866 2017 140-149 |
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10.1016/j.nima.2017.05.046 doi PQ20171228 (DE-627)OLC1999323637 (DE-599)GBVOLC1999323637 (PRQ)a1631-6ba969e31355510318d74d1d69d17bb3a022ce2e4c6fd956bff245c6deeca8320 (KEY)0136675020170000866000000140determinationofthepsprayprofilefornpsiliconsensors DE-627 ger DE-627 rakwb eng 530 DE-600 UA 5680. AVZ rvk Fretwurst, E verfasserin aut Determination of the p-spray profile for n+p silicon sensors using a MOSFET 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. Nutzungsrecht: © Elsevier B.V. Silicon pixel sensor [formula omitted]-type silicon [formula omitted]-spray Doping profile MOSFET TCAD simulations Instrumentation and Detectors Physics Garutti, E oth Klanner, R oth Kopsalis, I oth Schwandt, J oth Weberpals, M oth Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 866(2017), Seite 140-149 (DE-627)129862134 (DE-600)283627-0 (DE-576)015173461 0167-5087 nnns volume:866 year:2017 pages:140-149 http://dx.doi.org/10.1016/j.nima.2017.05.046 Volltext https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 UA 5680. AR 866 2017 140-149 |
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Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. 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determination of the p-spray profile for n+p silicon sensors using a mosfet |
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Determination of the p-spray profile for n+p silicon sensors using a MOSFET |
| abstract |
The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. |
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The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. |
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The standard technique to electrically isolate the n^+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p^+-implants. Although the knowledge of the p^+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p^+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with \approx 3.5 \times 10^{12} cm^{-2} of boron and \langle 1 0 0 \, \rangle crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3.5 \times 10^{12} cm^{-3} and 2 \times 10^{15} cm^{-3} for the MOSFET with p^+-implant, is determined down to a distance of a fraction of a \mu m from the Si-SiO_2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed. |
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Determination of the p-spray profile for n+p silicon sensors using a MOSFET |
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http://dx.doi.org/10.1016/j.nima.2017.05.046 https://www.sciencedirect.com/science/article/pii/S0168900217306101 http://arxiv.org/abs/1704.01829 |
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