Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon
The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from t...
Ausführliche Beschreibung
Autor*in: |
Fu, Y.Q. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2000 |
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Anmerkung: |
© Springer-Verlag London Limited 2000 |
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Übergeordnetes Werk: |
Enthalten in: The international journal of advanced manufacturing technology - Springer-Verlag London Limited, 1985, 16(2000), 12 vom: Okt., Seite 877-880 |
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Übergeordnetes Werk: |
volume:16 ; year:2000 ; number:12 ; month:10 ; pages:877-880 |
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DOI / URN: |
10.1007/s001700070005 |
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Katalog-ID: |
OLC2025991355 |
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520 | |a The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. | ||
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10.1007/s001700070005 doi (DE-627)OLC2025991355 (DE-He213)s001700070005-p DE-627 ger DE-627 rakwb eng 670 VZ Fu, Y.Q. verfasserin aut Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London Limited 2000 The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. Bryan, N.K.A. aut Shing, O.N. aut Hung, N.P. aut Enthalten in The international journal of advanced manufacturing technology Springer-Verlag London Limited, 1985 16(2000), 12 vom: Okt., Seite 877-880 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:16 year:2000 number:12 month:10 pages:877-880 https://doi.org/10.1007/s001700070005 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_32 GBV_ILN_70 GBV_ILN_132 GBV_ILN_136 GBV_ILN_150 GBV_ILN_161 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2048 GBV_ILN_2241 GBV_ILN_2333 GBV_ILN_4046 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 AR 16 2000 12 10 877-880 |
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10.1007/s001700070005 doi (DE-627)OLC2025991355 (DE-He213)s001700070005-p DE-627 ger DE-627 rakwb eng 670 VZ Fu, Y.Q. verfasserin aut Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London Limited 2000 The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. Bryan, N.K.A. aut Shing, O.N. aut Hung, N.P. aut Enthalten in The international journal of advanced manufacturing technology Springer-Verlag London Limited, 1985 16(2000), 12 vom: Okt., Seite 877-880 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:16 year:2000 number:12 month:10 pages:877-880 https://doi.org/10.1007/s001700070005 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_32 GBV_ILN_70 GBV_ILN_132 GBV_ILN_136 GBV_ILN_150 GBV_ILN_161 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2048 GBV_ILN_2241 GBV_ILN_2333 GBV_ILN_4046 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 AR 16 2000 12 10 877-880 |
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10.1007/s001700070005 doi (DE-627)OLC2025991355 (DE-He213)s001700070005-p DE-627 ger DE-627 rakwb eng 670 VZ Fu, Y.Q. verfasserin aut Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London Limited 2000 The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. Bryan, N.K.A. aut Shing, O.N. aut Hung, N.P. aut Enthalten in The international journal of advanced manufacturing technology Springer-Verlag London Limited, 1985 16(2000), 12 vom: Okt., Seite 877-880 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:16 year:2000 number:12 month:10 pages:877-880 https://doi.org/10.1007/s001700070005 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_32 GBV_ILN_70 GBV_ILN_132 GBV_ILN_136 GBV_ILN_150 GBV_ILN_161 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2048 GBV_ILN_2241 GBV_ILN_2333 GBV_ILN_4046 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 AR 16 2000 12 10 877-880 |
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10.1007/s001700070005 doi (DE-627)OLC2025991355 (DE-He213)s001700070005-p DE-627 ger DE-627 rakwb eng 670 VZ Fu, Y.Q. verfasserin aut Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London Limited 2000 The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. Bryan, N.K.A. aut Shing, O.N. aut Hung, N.P. aut Enthalten in The international journal of advanced manufacturing technology Springer-Verlag London Limited, 1985 16(2000), 12 vom: Okt., Seite 877-880 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:16 year:2000 number:12 month:10 pages:877-880 https://doi.org/10.1007/s001700070005 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_32 GBV_ILN_70 GBV_ILN_132 GBV_ILN_136 GBV_ILN_150 GBV_ILN_161 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2048 GBV_ILN_2241 GBV_ILN_2333 GBV_ILN_4046 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 AR 16 2000 12 10 877-880 |
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10.1007/s001700070005 doi (DE-627)OLC2025991355 (DE-He213)s001700070005-p DE-627 ger DE-627 rakwb eng 670 VZ Fu, Y.Q. verfasserin aut Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London Limited 2000 The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. Bryan, N.K.A. aut Shing, O.N. aut Hung, N.P. aut Enthalten in The international journal of advanced manufacturing technology Springer-Verlag London Limited, 1985 16(2000), 12 vom: Okt., Seite 877-880 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:16 year:2000 number:12 month:10 pages:877-880 https://doi.org/10.1007/s001700070005 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_32 GBV_ILN_70 GBV_ILN_132 GBV_ILN_136 GBV_ILN_150 GBV_ILN_161 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2048 GBV_ILN_2241 GBV_ILN_2333 GBV_ILN_4046 GBV_ILN_4277 GBV_ILN_4307 GBV_ILN_4313 AR 16 2000 12 10 877-880 |
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Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon |
abstract |
The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. © Springer-Verlag London Limited 2000 |
abstractGer |
The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. © Springer-Verlag London Limited 2000 |
abstract_unstemmed |
The influence of the redeposition effect on the focused ion beam 3D micromachining process of silicon is discussed. Milling of some typical patterns in which redeposition is serious has been carried out. Experimental results are analysed in combination with a theoretical model. It can be seen from the analysis that the order of recycle-milling is very important for 3D microfabrication owing to redeposition during the process. In addition, the parameters of beam current, ion beam spot size, etc. are also key factors in the process. A groove and dome shape will be formed at the root of the sidewall and the bottom of the pattern, respectively, because of the ion sputtering yield bariation and sidewall redeposition. Finally, avoidance methods are suggested as a result of the analysis. © Springer-Verlag London Limited 2000 |
collection_details |
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container_issue |
12 |
title_short |
Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon |
url |
https://doi.org/10.1007/s001700070005 |
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author2 |
Bryan, N.K.A. Shing, O.N. Hung, N.P. |
author2Str |
Bryan, N.K.A. Shing, O.N. Hung, N.P. |
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doi_str |
10.1007/s001700070005 |
up_date |
2024-07-04T02:51:02.776Z |
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