Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire
Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the re...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Huang, Hui [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag London 2015 |
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| Übergeordnetes Werk: |
Enthalten in: The international journal of advanced manufacturing technology - Springer London, 1985, 81(2015), 5-8 vom: 15. Mai, Seite 955-965 |
|---|---|
| Übergeordnetes Werk: |
volume:81 ; year:2015 ; number:5-8 ; day:15 ; month:05 ; pages:955-965 |
| Links: |
|---|
| DOI / URN: |
10.1007/s00170-015-7250-8 |
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OLC2026075697 |
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| 520 | |a Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. | ||
| 650 | 4 | |a Single-crystal SiC | |
| 650 | 4 | |a Fixed diamond wire | |
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| 700 | 1 | |a Xu, Xipeng |4 aut | |
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10.1007/s00170-015-7250-8 doi (DE-627)OLC2026075697 (DE-He213)s00170-015-7250-8-p DE-627 ger DE-627 rakwb eng 670 VZ Huang, Hui verfasserin aut Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London 2015 Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. Single-crystal SiC Fixed diamond wire Sawing Material remove mechanism Surface profile Zhang, Yuxing aut Xu, Xipeng aut Enthalten in The international journal of advanced manufacturing technology Springer London, 1985 81(2015), 5-8 vom: 15. Mai, Seite 955-965 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:81 year:2015 number:5-8 day:15 month:05 pages:955-965 https://doi.org/10.1007/s00170-015-7250-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_70 GBV_ILN_2018 GBV_ILN_2333 AR 81 2015 5-8 15 05 955-965 |
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10.1007/s00170-015-7250-8 doi (DE-627)OLC2026075697 (DE-He213)s00170-015-7250-8-p DE-627 ger DE-627 rakwb eng 670 VZ Huang, Hui verfasserin aut Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London 2015 Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. Single-crystal SiC Fixed diamond wire Sawing Material remove mechanism Surface profile Zhang, Yuxing aut Xu, Xipeng aut Enthalten in The international journal of advanced manufacturing technology Springer London, 1985 81(2015), 5-8 vom: 15. Mai, Seite 955-965 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:81 year:2015 number:5-8 day:15 month:05 pages:955-965 https://doi.org/10.1007/s00170-015-7250-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_70 GBV_ILN_2018 GBV_ILN_2333 AR 81 2015 5-8 15 05 955-965 |
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10.1007/s00170-015-7250-8 doi (DE-627)OLC2026075697 (DE-He213)s00170-015-7250-8-p DE-627 ger DE-627 rakwb eng 670 VZ Huang, Hui verfasserin aut Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London 2015 Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. Single-crystal SiC Fixed diamond wire Sawing Material remove mechanism Surface profile Zhang, Yuxing aut Xu, Xipeng aut Enthalten in The international journal of advanced manufacturing technology Springer London, 1985 81(2015), 5-8 vom: 15. Mai, Seite 955-965 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:81 year:2015 number:5-8 day:15 month:05 pages:955-965 https://doi.org/10.1007/s00170-015-7250-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_70 GBV_ILN_2018 GBV_ILN_2333 AR 81 2015 5-8 15 05 955-965 |
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10.1007/s00170-015-7250-8 doi (DE-627)OLC2026075697 (DE-He213)s00170-015-7250-8-p DE-627 ger DE-627 rakwb eng 670 VZ Huang, Hui verfasserin aut Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London 2015 Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. Single-crystal SiC Fixed diamond wire Sawing Material remove mechanism Surface profile Zhang, Yuxing aut Xu, Xipeng aut Enthalten in The international journal of advanced manufacturing technology Springer London, 1985 81(2015), 5-8 vom: 15. Mai, Seite 955-965 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:81 year:2015 number:5-8 day:15 month:05 pages:955-965 https://doi.org/10.1007/s00170-015-7250-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_70 GBV_ILN_2018 GBV_ILN_2333 AR 81 2015 5-8 15 05 955-965 |
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10.1007/s00170-015-7250-8 doi (DE-627)OLC2026075697 (DE-He213)s00170-015-7250-8-p DE-627 ger DE-627 rakwb eng 670 VZ Huang, Hui verfasserin aut Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag London 2015 Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. Single-crystal SiC Fixed diamond wire Sawing Material remove mechanism Surface profile Zhang, Yuxing aut Xu, Xipeng aut Enthalten in The international journal of advanced manufacturing technology Springer London, 1985 81(2015), 5-8 vom: 15. Mai, Seite 955-965 (DE-627)129185299 (DE-600)52651-4 (DE-576)014456192 0268-3768 nnns volume:81 year:2015 number:5-8 day:15 month:05 pages:955-965 https://doi.org/10.1007/s00170-015-7250-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_70 GBV_ILN_2018 GBV_ILN_2333 AR 81 2015 5-8 15 05 955-965 |
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Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire |
| abstract |
Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. © Springer-Verlag London 2015 |
| abstractGer |
Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. © Springer-Verlag London 2015 |
| abstract_unstemmed |
Abstract Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value. © Springer-Verlag London 2015 |
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Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire |
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Zhang, Yuxing Xu, Xipeng |
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