Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate

Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Komatsu, T. [verfasserIn] Sakemi, Y. Shimagami, K. Matusita, K. Miyazaki, M.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1996

Schlagwörter:	Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate

Anmerkung:	© Chapman & Hall 1996

Übergeordnetes Werk:	Enthalten in: Journal of materials science / Materials in electronics - Kluwer Academic Publishers, 1990, 7(1996), 2 vom: Apr., Seite 101-106
Übergeordnetes Werk:	volume:7 ; year:1996 ; number:2 ; month:04 ; pages:101-106

Links:	Volltext

DOI / URN:	10.1007/BF00225631

Katalog-ID:	OLC2026237255

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520			\|a Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed.
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allfields	10.1007/BF00225631 doi (DE-627)OLC2026237255 (DE-He213)BF00225631-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Komatsu, T. verfasserin aut Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate Sakemi, Y. aut Shimagami, K. aut Matusita, K. aut Miyazaki, M. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 2 vom: Apr., Seite 101-106 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:2 month:04 pages:101-106 https://doi.org/10.1007/BF00225631 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 2 04 101-106
spelling	10.1007/BF00225631 doi (DE-627)OLC2026237255 (DE-He213)BF00225631-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Komatsu, T. verfasserin aut Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate Sakemi, Y. aut Shimagami, K. aut Matusita, K. aut Miyazaki, M. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 2 vom: Apr., Seite 101-106 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:2 month:04 pages:101-106 https://doi.org/10.1007/BF00225631 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 2 04 101-106
allfields_unstemmed	10.1007/BF00225631 doi (DE-627)OLC2026237255 (DE-He213)BF00225631-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Komatsu, T. verfasserin aut Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate Sakemi, Y. aut Shimagami, K. aut Matusita, K. aut Miyazaki, M. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 2 vom: Apr., Seite 101-106 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:2 month:04 pages:101-106 https://doi.org/10.1007/BF00225631 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 2 04 101-106
allfieldsGer	10.1007/BF00225631 doi (DE-627)OLC2026237255 (DE-He213)BF00225631-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Komatsu, T. verfasserin aut Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate Sakemi, Y. aut Shimagami, K. aut Matusita, K. aut Miyazaki, M. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 2 vom: Apr., Seite 101-106 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:2 month:04 pages:101-106 https://doi.org/10.1007/BF00225631 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 2 04 101-106
allfieldsSound	10.1007/BF00225631 doi (DE-627)OLC2026237255 (DE-He213)BF00225631-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Komatsu, T. verfasserin aut Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate Sakemi, Y. aut Shimagami, K. aut Matusita, K. aut Miyazaki, M. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 2 vom: Apr., Seite 101-106 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:2 month:04 pages:101-106 https://doi.org/10.1007/BF00225631 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 2 04 101-106
language	English
source	Enthalten in Journal of materials science / Materials in electronics 7(1996), 2 vom: Apr., Seite 101-106 volume:7 year:1996 number:2 month:04 pages:101-106
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author	Komatsu, T.
spellingShingle	Komatsu, T. ddc 600 misc Spectroscopy misc Magnetic Field misc Thin Film misc Magnetic Property misc Glass Substrate Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate
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topic_title	600 670 620 VZ Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate Spectroscopy Magnetic Field Thin Film Magnetic Property Glass Substrate
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title	Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate
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title_full	Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate
author_sort	Komatsu, T.
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author_browse	Komatsu, T. Sakemi, Y. Shimagami, K. Matusita, K. Miyazaki, M.
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title_sort	mössbauer study of fe magnetic state at the interface between fe-al-si thin films and crystallized glass substrate
title_auth	Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate
abstract	Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. © Chapman & Hall 1996
abstractGer	Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. © Chapman & Hall 1996
abstract_unstemmed	Abstract The magnetic state of Fe atoms at or near the interface between $ Fe_{74.3} $$ Al_{9.8} $$ Si_{15.9} $ sendust magnetic thin films and $ SiO_{2} $-based crystallized glass substrate (Fotoceram, Corning Co.) has been examined using conversion electron Mössbauer spectroscopy. The thicknesses of sputtered films are 0.05–2.0 Μm, and annealing conditions are at 500 ‡C for 1 H. The excellent soft magnetic properties are not obtained for films with a thickness of less than 0.5 Μm. The presence of ferromagnetic Fe atoms with internal magnetic fields of 24.3–24.9 $ MAm^{−1} $ is confirmed at or near the interface, indicating the formation of an Fe-rich phase such as $ Fe_{90} $$ Si_{10} $. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20.... The formation of the Fe-rich phase is one of the main reasons for the degradation of the soft magnetic properties of sendust films deposited on $ SiO_{2} $-based crystallized glass substrate, even though the $ DO_{3} $-type ordered structure has also been formed. © Chapman & Hall 1996
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title_short	Mössbauer study of Fe magnetic state at the interface between Fe-Al-Si thin films and crystallized glass substrate
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author2	Sakemi, Y. Shimagami, K. Matusita, K. Miyazaki, M.
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