Growth and shrinkage of stacking faults by gold diffusion in silicon

Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in propo...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Morooka, M. [verfasserIn]

Format:	Artikel
Sprache:	Englisch

Erschienen:	1996

Schlagwörter:	Silicon Gold Shrinkage Material Processing Point Defect

Anmerkung:	© Chapman & Hall 1996

Übergeordnetes Werk:	Enthalten in: Journal of materials science / Materials in electronics - Kluwer Academic Publishers, 1990, 7(1996), 3 vom: Juni, Seite 221-225
Übergeordnetes Werk:	volume:7 ; year:1996 ; number:3 ; month:06 ; pages:221-225

Links:	Volltext

DOI / URN:	10.1007/BF00133119

Katalog-ID:	OLC2026237344

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650		4	\|a Silicon
650		4	\|a Gold
650		4	\|a Shrinkage
650		4	\|a Material Processing
650		4	\|a Point Defect
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spelling	10.1007/BF00133119 doi (DE-627)OLC2026237344 (DE-He213)BF00133119-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Morooka, M. verfasserin aut Growth and shrinkage of stacking faults by gold diffusion in silicon 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. Silicon Gold Shrinkage Material Processing Point Defect Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 3 vom: Juni, Seite 221-225 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:3 month:06 pages:221-225 https://doi.org/10.1007/BF00133119 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 3 06 221-225
allfields_unstemmed	10.1007/BF00133119 doi (DE-627)OLC2026237344 (DE-He213)BF00133119-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Morooka, M. verfasserin aut Growth and shrinkage of stacking faults by gold diffusion in silicon 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. Silicon Gold Shrinkage Material Processing Point Defect Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 3 vom: Juni, Seite 221-225 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:3 month:06 pages:221-225 https://doi.org/10.1007/BF00133119 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 3 06 221-225
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allfieldsSound	10.1007/BF00133119 doi (DE-627)OLC2026237344 (DE-He213)BF00133119-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Morooka, M. verfasserin aut Growth and shrinkage of stacking faults by gold diffusion in silicon 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1996 Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. Silicon Gold Shrinkage Material Processing Point Defect Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 7(1996), 3 vom: Juni, Seite 221-225 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:7 year:1996 number:3 month:06 pages:221-225 https://doi.org/10.1007/BF00133119 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 7 1996 3 06 221-225
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title_sort	growth and shrinkage of stacking faults by gold diffusion in silicon
title_auth	Growth and shrinkage of stacking faults by gold diffusion in silicon
abstract	Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. © Chapman & Hall 1996
abstractGer	Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. © Chapman & Hall 1996
abstract_unstemmed	Abstract Gold atoms were indiffused at 1150 ‡C into a silicon crystal containing nuclei for point defects, and then annealed at 1000 ‡C. Growth and shrinkage of the stacking faults induced by the gold diffusion has been investigated. In the indiffusion process, the faults grow homogeneously in proportion to the square root of substitutional gold concentration, but the volume density of the faults is limited at the very beginning of the gold diffusion and does not depend on the gold concentration. In the annealing, the faults shrink inhomogeneously and disappear in turn in proportion to the decrease of substitutional gold, keeping the same mean size as before annealing. The difference between behaviours in the growth and shrinkage is caused by the differences during absorption and discharge of silicon atoms by the faults, due to a distortion around the fault edge. © Chapman & Hall 1996
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title_short	Growth and shrinkage of stacking faults by gold diffusion in silicon
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