Long-wavelength quantum-dot lasers

Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different appr...
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Autor*in:	Grundmann, M. [verfasserIn] Ledentsov, N. N. Hopfer, F. Heinrichsdorff, F. Guffarth, F. Bimberg, D. Ustinov, V. M. Zhukov, A. E. Kovsh, A. R. Maximov, M. V. Musikhin, Yu. G. Alferov, Zh. I. Lott, J. A. Zhakharov, N. D. Werner, P.

Format:	Artikel
Sprache:	Englisch

Erschienen:	2002

Schlagwörter:	Recombination GaAs Excited State Electronic Material Emission Spectrum

Anmerkung:	© Kluwer Academic Publishers 2002

Übergeordnetes Werk:	Enthalten in: Journal of materials science / Materials in electronics - Kluwer Academic Publishers, 1990, 13(2002), 11 vom: Nov., Seite 643-647
Übergeordnetes Werk:	volume:13 ; year:2002 ; number:11 ; month:11 ; pages:643-647

Links:	Volltext

DOI / URN:	10.1023/A:1020610109933

Katalog-ID:	OLC2026243662

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allfields	10.1023/A:1020610109933 doi (DE-627)OLC2026243662 (DE-He213)A:1020610109933-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Grundmann, M. verfasserin aut Long-wavelength quantum-dot lasers 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2002 Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. Recombination GaAs Excited State Electronic Material Emission Spectrum Ledentsov, N. N. aut Hopfer, F. aut Heinrichsdorff, F. aut Guffarth, F. aut Bimberg, D. aut Ustinov, V. M. aut Zhukov, A. E. aut Kovsh, A. R. aut Maximov, M. V. aut Musikhin, Yu. G. aut Alferov, Zh. I. aut Lott, J. A. aut Zhakharov, N. D. aut Werner, P. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 13(2002), 11 vom: Nov., Seite 643-647 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:13 year:2002 number:11 month:11 pages:643-647 https://doi.org/10.1023/A:1020610109933 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 AR 13 2002 11 11 643-647
spelling	10.1023/A:1020610109933 doi (DE-627)OLC2026243662 (DE-He213)A:1020610109933-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Grundmann, M. verfasserin aut Long-wavelength quantum-dot lasers 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2002 Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. Recombination GaAs Excited State Electronic Material Emission Spectrum Ledentsov, N. N. aut Hopfer, F. aut Heinrichsdorff, F. aut Guffarth, F. aut Bimberg, D. aut Ustinov, V. M. aut Zhukov, A. E. aut Kovsh, A. R. aut Maximov, M. V. aut Musikhin, Yu. G. aut Alferov, Zh. I. aut Lott, J. A. aut Zhakharov, N. D. aut Werner, P. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 13(2002), 11 vom: Nov., Seite 643-647 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:13 year:2002 number:11 month:11 pages:643-647 https://doi.org/10.1023/A:1020610109933 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 AR 13 2002 11 11 643-647
allfields_unstemmed	10.1023/A:1020610109933 doi (DE-627)OLC2026243662 (DE-He213)A:1020610109933-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Grundmann, M. verfasserin aut Long-wavelength quantum-dot lasers 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2002 Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. Recombination GaAs Excited State Electronic Material Emission Spectrum Ledentsov, N. N. aut Hopfer, F. aut Heinrichsdorff, F. aut Guffarth, F. aut Bimberg, D. aut Ustinov, V. M. aut Zhukov, A. E. aut Kovsh, A. R. aut Maximov, M. V. aut Musikhin, Yu. G. aut Alferov, Zh. I. aut Lott, J. A. aut Zhakharov, N. D. aut Werner, P. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 13(2002), 11 vom: Nov., Seite 643-647 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:13 year:2002 number:11 month:11 pages:643-647 https://doi.org/10.1023/A:1020610109933 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 AR 13 2002 11 11 643-647
allfieldsGer	10.1023/A:1020610109933 doi (DE-627)OLC2026243662 (DE-He213)A:1020610109933-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Grundmann, M. verfasserin aut Long-wavelength quantum-dot lasers 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2002 Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. Recombination GaAs Excited State Electronic Material Emission Spectrum Ledentsov, N. N. aut Hopfer, F. aut Heinrichsdorff, F. aut Guffarth, F. aut Bimberg, D. aut Ustinov, V. M. aut Zhukov, A. E. aut Kovsh, A. R. aut Maximov, M. V. aut Musikhin, Yu. G. aut Alferov, Zh. I. aut Lott, J. A. aut Zhakharov, N. D. aut Werner, P. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 13(2002), 11 vom: Nov., Seite 643-647 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:13 year:2002 number:11 month:11 pages:643-647 https://doi.org/10.1023/A:1020610109933 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 AR 13 2002 11 11 643-647
allfieldsSound	10.1023/A:1020610109933 doi (DE-627)OLC2026243662 (DE-He213)A:1020610109933-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Grundmann, M. verfasserin aut Long-wavelength quantum-dot lasers 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2002 Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. Recombination GaAs Excited State Electronic Material Emission Spectrum Ledentsov, N. N. aut Hopfer, F. aut Heinrichsdorff, F. aut Guffarth, F. aut Bimberg, D. aut Ustinov, V. M. aut Zhukov, A. E. aut Kovsh, A. R. aut Maximov, M. V. aut Musikhin, Yu. G. aut Alferov, Zh. I. aut Lott, J. A. aut Zhakharov, N. D. aut Werner, P. aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 13(2002), 11 vom: Nov., Seite 643-647 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:13 year:2002 number:11 month:11 pages:643-647 https://doi.org/10.1023/A:1020610109933 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 AR 13 2002 11 11 643-647
language	English
source	Enthalten in Journal of materials science / Materials in electronics 13(2002), 11 vom: Nov., Seite 643-647 volume:13 year:2002 number:11 month:11 pages:643-647
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topic_facet	Recombination GaAs Excited State Electronic Material Emission Spectrum
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authorswithroles_txt_mv	Grundmann, M. @@aut@@ Ledentsov, N. N. @@aut@@ Hopfer, F. @@aut@@ Heinrichsdorff, F. @@aut@@ Guffarth, F. @@aut@@ Bimberg, D. @@aut@@ Ustinov, V. M. @@aut@@ Zhukov, A. E. @@aut@@ Kovsh, A. R. @@aut@@ Maximov, M. V. @@aut@@ Musikhin, Yu. G. @@aut@@ Alferov, Zh. I. @@aut@@ Lott, J. A. @@aut@@ Zhakharov, N. D. @@aut@@ Werner, P. @@aut@@
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author	Grundmann, M.
spellingShingle	Grundmann, M. ddc 600 misc Recombination misc GaAs misc Excited State misc Electronic Material misc Emission Spectrum Long-wavelength quantum-dot lasers
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title	Long-wavelength quantum-dot lasers
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title_full	Long-wavelength quantum-dot lasers
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author_browse	Grundmann, M. Ledentsov, N. N. Hopfer, F. Heinrichsdorff, F. Guffarth, F. Bimberg, D. Ustinov, V. M. Zhukov, A. E. Kovsh, A. R. Maximov, M. V. Musikhin, Yu. G. Alferov, Zh. I. Lott, J. A. Zhakharov, N. D. Werner, P.
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title_sort	long-wavelength quantum-dot lasers
title_auth	Long-wavelength quantum-dot lasers
abstract	Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. © Kluwer Academic Publishers 2002
abstractGer	Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. © Kluwer Academic Publishers 2002
abstract_unstemmed	Abstract Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (≥80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. © Kluwer Academic Publishers 2002
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title_short	Long-wavelength quantum-dot lasers
url	https://doi.org/10.1023/A:1020610109933
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author2	Ledentsov, N. N. Hopfer, F. Heinrichsdorff, F. Guffarth, F. Bimberg, D. Ustinov, V. M. Zhukov, A. E. Kovsh, A. R. Maximov, M. V. Musikhin, Yu. G. Alferov, Zh. I. Lott, J. A. Zhakharov, N. D. Werner, P.
author2Str	Ledentsov, N. N. Hopfer, F. Heinrichsdorff, F. Guffarth, F. Bimberg, D. Ustinov, V. M. Zhukov, A. E. Kovsh, A. R. Maximov, M. V. Musikhin, Yu. G. Alferov, Zh. I. Lott, J. A. Zhakharov, N. D. Werner, P.
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