The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films
Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/A...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhang, Wenjie [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2006 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Kluwer Academic Publishers, 1990, 17(2006), 11 vom: Nov., Seite 931-935 |
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| Übergeordnetes Werk: |
volume:17 ; year:2006 ; number:11 ; month:11 ; pages:931-935 |
| Links: |
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| DOI / URN: |
10.1007/s10854-006-0046-8 |
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| Katalog-ID: |
OLC2026249288 |
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| 520 | |a Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. | ||
| 650 | 4 | |a AlCu | |
| 650 | 4 | |a Physical Vapor Deposition | |
| 650 | 4 | |a Substrate Bias | |
| 650 | 4 | |a Bias Power | |
| 650 | 4 | |a Ionize Physical Vapor Deposition | |
| 700 | 1 | |a Yi, Leeward |4 aut | |
| 700 | 1 | |a Tao, Kai |4 aut | |
| 700 | 1 | |a Ma, Yue |4 aut | |
| 700 | 1 | |a Chang, Pingyi |4 aut | |
| 700 | 1 | |a Wu, Jin |4 aut | |
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10.1007/s10854-006-0046-8 doi (DE-627)OLC2026249288 (DE-He213)s10854-006-0046-8-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhang, Wenjie verfasserin aut The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2006 Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. AlCu Physical Vapor Deposition Substrate Bias Bias Power Ionize Physical Vapor Deposition Yi, Leeward aut Tao, Kai aut Ma, Yue aut Chang, Pingyi aut Wu, Jin aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 17(2006), 11 vom: Nov., Seite 931-935 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:17 year:2006 number:11 month:11 pages:931-935 https://doi.org/10.1007/s10854-006-0046-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 17 2006 11 11 931-935 |
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10.1007/s10854-006-0046-8 doi (DE-627)OLC2026249288 (DE-He213)s10854-006-0046-8-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhang, Wenjie verfasserin aut The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2006 Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. AlCu Physical Vapor Deposition Substrate Bias Bias Power Ionize Physical Vapor Deposition Yi, Leeward aut Tao, Kai aut Ma, Yue aut Chang, Pingyi aut Wu, Jin aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 17(2006), 11 vom: Nov., Seite 931-935 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:17 year:2006 number:11 month:11 pages:931-935 https://doi.org/10.1007/s10854-006-0046-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 17 2006 11 11 931-935 |
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10.1007/s10854-006-0046-8 doi (DE-627)OLC2026249288 (DE-He213)s10854-006-0046-8-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhang, Wenjie verfasserin aut The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2006 Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. AlCu Physical Vapor Deposition Substrate Bias Bias Power Ionize Physical Vapor Deposition Yi, Leeward aut Tao, Kai aut Ma, Yue aut Chang, Pingyi aut Wu, Jin aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 17(2006), 11 vom: Nov., Seite 931-935 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:17 year:2006 number:11 month:11 pages:931-935 https://doi.org/10.1007/s10854-006-0046-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 17 2006 11 11 931-935 |
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10.1007/s10854-006-0046-8 doi (DE-627)OLC2026249288 (DE-He213)s10854-006-0046-8-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhang, Wenjie verfasserin aut The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2006 Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. AlCu Physical Vapor Deposition Substrate Bias Bias Power Ionize Physical Vapor Deposition Yi, Leeward aut Tao, Kai aut Ma, Yue aut Chang, Pingyi aut Wu, Jin aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 17(2006), 11 vom: Nov., Seite 931-935 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:17 year:2006 number:11 month:11 pages:931-935 https://doi.org/10.1007/s10854-006-0046-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 17 2006 11 11 931-935 |
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10.1007/s10854-006-0046-8 doi (DE-627)OLC2026249288 (DE-He213)s10854-006-0046-8-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhang, Wenjie verfasserin aut The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2006 Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. AlCu Physical Vapor Deposition Substrate Bias Bias Power Ionize Physical Vapor Deposition Yi, Leeward aut Tao, Kai aut Ma, Yue aut Chang, Pingyi aut Wu, Jin aut Enthalten in Journal of materials science / Materials in electronics Kluwer Academic Publishers, 1990 17(2006), 11 vom: Nov., Seite 931-935 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:17 year:2006 number:11 month:11 pages:931-935 https://doi.org/10.1007/s10854-006-0046-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 17 2006 11 11 931-935 |
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the influence of substrate bias in i-pvd process on the properties of ti and al alloy films |
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The influence of substrate bias in I-PVD process on the properties of Ti and Al alloy films |
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Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. © Springer Science+Business Media, LLC 2006 |
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Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. © Springer Science+Business Media, LLC 2006 |
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Abstract The effects of substrate bias power on the microstructure, physical and electrical properties of thin Ti films prepared by ionized physical vapor deposition (I-PVD) process were studied. The influence of Ti underlayer with substrate bias power ranging from 0 to 400 W on the subsequent TiN/AlCu films deposited by conventional PVD process in a multilayer structure was further investigated. Decreasing substrate bias power led: (1) better Ti(002) texture, smoother surface, and lower resistivity in Ti films, and (2) better Al(111) texture, narrower grain size distribution, smoother final surface, better-defined TiN/AlCu interface, and lower residual stress in AlCu alloy films in the corresponding Ti/TiN/AlCu stacks. In both cases, lower substrate bias power resulted in films with desirable microstructures and properties, compared to higher bias powers, for use as Al-based interconnects in IC manufacturing. © Springer Science+Business Media, LLC 2006 |
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