Infrared light emission from porous silicon
Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements w...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jia, Guobin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2008 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 |
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| Übergeordnetes Werk: |
volume:19 ; year:2008 ; number:Suppl 1 ; day:20 ; month:01 ; pages:9-13 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10854-007-9560-6 |
|---|
| Katalog-ID: |
OLC2026252882 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2026252882 | ||
| 003 | DE-627 | ||
| 005 | 20230503125331.0 | ||
| 007 | tu | ||
| 008 | 200820s2008 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10854-007-9560-6 |2 doi | |
| 035 | |a (DE-627)OLC2026252882 | ||
| 035 | |a (DE-He213)s10854-007-9560-6-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
| 100 | 1 | |a Jia, Guobin |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Infrared light emission from porous silicon |
| 264 | 1 | |c 2008 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media, LLC 2008 | ||
| 520 | |a Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. | ||
| 650 | 4 | |a Porous Silicon | |
| 650 | 4 | |a Porous Layer | |
| 650 | 4 | |a Porous Silicon Layer | |
| 650 | 4 | |a Porous Silicon Sample | |
| 650 | 4 | |a Nonradiative Channel | |
| 700 | 1 | |a Seifert, Winfried |4 aut | |
| 700 | 1 | |a Arguirov, Tzanimir |4 aut | |
| 700 | 1 | |a Kittler, Martin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
| 773 | 1 | 8 | |g volume:19 |g year:2008 |g number:Suppl 1 |g day:20 |g month:01 |g pages:9-13 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s10854-007-9560-6 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4323 | ||
| 951 | |a AR | ||
| 952 | |d 19 |j 2008 |e Suppl 1 |b 20 |c 01 |h 9-13 | ||
| author_variant |
g j gj w s ws t a ta m k mk |
|---|---|
| matchkey_str |
article:09574522:2008----::nrrdiheisofop |
| hierarchy_sort_str |
2008 |
| publishDate |
2008 |
| allfields |
10.1007/s10854-007-9560-6 doi (DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jia, Guobin verfasserin aut Infrared light emission from porous silicon 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel Seifert, Winfried aut Arguirov, Tzanimir aut Kittler, Martin aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 https://doi.org/10.1007/s10854-007-9560-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 19 2008 Suppl 1 20 01 9-13 |
| spelling |
10.1007/s10854-007-9560-6 doi (DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jia, Guobin verfasserin aut Infrared light emission from porous silicon 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel Seifert, Winfried aut Arguirov, Tzanimir aut Kittler, Martin aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 https://doi.org/10.1007/s10854-007-9560-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 19 2008 Suppl 1 20 01 9-13 |
| allfields_unstemmed |
10.1007/s10854-007-9560-6 doi (DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jia, Guobin verfasserin aut Infrared light emission from porous silicon 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel Seifert, Winfried aut Arguirov, Tzanimir aut Kittler, Martin aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 https://doi.org/10.1007/s10854-007-9560-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 19 2008 Suppl 1 20 01 9-13 |
| allfieldsGer |
10.1007/s10854-007-9560-6 doi (DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jia, Guobin verfasserin aut Infrared light emission from porous silicon 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel Seifert, Winfried aut Arguirov, Tzanimir aut Kittler, Martin aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 https://doi.org/10.1007/s10854-007-9560-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 19 2008 Suppl 1 20 01 9-13 |
| allfieldsSound |
10.1007/s10854-007-9560-6 doi (DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jia, Guobin verfasserin aut Infrared light emission from porous silicon 2008 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2008 Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel Seifert, Winfried aut Arguirov, Tzanimir aut Kittler, Martin aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 https://doi.org/10.1007/s10854-007-9560-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 19 2008 Suppl 1 20 01 9-13 |
| language |
English |
| source |
Enthalten in Journal of materials science / Materials in electronics 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 |
| sourceStr |
Enthalten in Journal of materials science / Materials in electronics 19(2008), Suppl 1 vom: 20. Jan., Seite 9-13 volume:19 year:2008 number:Suppl 1 day:20 month:01 pages:9-13 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel |
| dewey-raw |
600 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science / Materials in electronics |
| authorswithroles_txt_mv |
Jia, Guobin @@aut@@ Seifert, Winfried @@aut@@ Arguirov, Tzanimir @@aut@@ Kittler, Martin @@aut@@ |
| publishDateDaySort_date |
2008-01-20T00:00:00Z |
| hierarchy_top_id |
130863289 |
| dewey-sort |
3600 |
| id |
OLC2026252882 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026252882</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125331.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2008 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-007-9560-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026252882</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-007-9560-6-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jia, Guobin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Infrared light emission from porous silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2008</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon Sample</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nonradiative Channel</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Seifert, Winfried</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arguirov, Tzanimir</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kittler, Martin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">19(2008), Suppl 1 vom: 20. Jan., Seite 9-13</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:19</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:Suppl 1</subfield><subfield code="g">day:20</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:9-13</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-007-9560-6</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">19</subfield><subfield code="j">2008</subfield><subfield code="e">Suppl 1</subfield><subfield code="b">20</subfield><subfield code="c">01</subfield><subfield code="h">9-13</subfield></datafield></record></collection>
|
| author |
Jia, Guobin |
| spellingShingle |
Jia, Guobin ddc 600 misc Porous Silicon misc Porous Layer misc Porous Silicon Layer misc Porous Silicon Sample misc Nonradiative Channel Infrared light emission from porous silicon |
| authorStr |
Jia, Guobin |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
| format |
Article |
| dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0957-4522 |
| topic_title |
600 670 620 VZ Infrared light emission from porous silicon Porous Silicon Porous Layer Porous Silicon Layer Porous Silicon Sample Nonradiative Channel |
| topic |
ddc 600 misc Porous Silicon misc Porous Layer misc Porous Silicon Layer misc Porous Silicon Sample misc Nonradiative Channel |
| topic_unstemmed |
ddc 600 misc Porous Silicon misc Porous Layer misc Porous Silicon Layer misc Porous Silicon Sample misc Nonradiative Channel |
| topic_browse |
ddc 600 misc Porous Silicon misc Porous Layer misc Porous Silicon Layer misc Porous Silicon Sample misc Nonradiative Channel |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science / Materials in electronics |
| hierarchy_parent_id |
130863289 |
| dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
| hierarchy_top_title |
Journal of materials science / Materials in electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
| title |
Infrared light emission from porous silicon |
| ctrlnum |
(DE-627)OLC2026252882 (DE-He213)s10854-007-9560-6-p |
| title_full |
Infrared light emission from porous silicon |
| author_sort |
Jia, Guobin |
| journal |
Journal of materials science / Materials in electronics |
| journalStr |
Journal of materials science / Materials in electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2008 |
| contenttype_str_mv |
txt |
| container_start_page |
9 |
| author_browse |
Jia, Guobin Seifert, Winfried Arguirov, Tzanimir Kittler, Martin |
| container_volume |
19 |
| class |
600 670 620 VZ |
| format_se |
Aufsätze |
| author-letter |
Jia, Guobin |
| doi_str_mv |
10.1007/s10854-007-9560-6 |
| dewey-full |
600 670 620 |
| title_sort |
infrared light emission from porous silicon |
| title_auth |
Infrared light emission from porous silicon |
| abstract |
Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. © Springer Science+Business Media, LLC 2008 |
| abstractGer |
Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. © Springer Science+Business Media, LLC 2008 |
| abstract_unstemmed |
Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature. © Springer Science+Business Media, LLC 2008 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 |
| container_issue |
Suppl 1 |
| title_short |
Infrared light emission from porous silicon |
| url |
https://doi.org/10.1007/s10854-007-9560-6 |
| remote_bool |
false |
| author2 |
Seifert, Winfried Arguirov, Tzanimir Kittler, Martin |
| author2Str |
Seifert, Winfried Arguirov, Tzanimir Kittler, Martin |
| ppnlink |
130863289 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10854-007-9560-6 |
| up_date |
2024-07-04T03:29:45.401Z |
| _version_ |
1803617603847979008 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026252882</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125331.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2008 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-007-9560-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026252882</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-007-9560-6-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jia, Guobin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Infrared light emission from porous silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2008</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and $ H_{2} $$ O_{2} $, confirmed that the broad IR band originates from the Si/$ SiO_{x} $ interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon Sample</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nonradiative Channel</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Seifert, Winfried</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arguirov, Tzanimir</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kittler, Martin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">19(2008), Suppl 1 vom: 20. Jan., Seite 9-13</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:19</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:Suppl 1</subfield><subfield code="g">day:20</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:9-13</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-007-9560-6</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">19</subfield><subfield code="j">2008</subfield><subfield code="e">Suppl 1</subfield><subfield code="b">20</subfield><subfield code="c">01</subfield><subfield code="h">9-13</subfield></datafield></record></collection>
|
| score |
7.401232 |