Optical properties of undoped and oxygen doped CuCl films on silicon substrates
Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and cons...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Danieluk, Dominik [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 |
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| Übergeordnetes Werk: |
volume:20 ; year:2007 ; number:Suppl 1 ; day:27 ; month:11 ; pages:76-80 |
| Links: |
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| DOI / URN: |
10.1007/s10854-007-9448-5 |
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| Katalog-ID: |
OLC202625589X |
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| 520 | |a Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. | ||
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| 700 | 1 | |a Bradley, Ann L. |4 aut | |
| 700 | 1 | |a Mitra, Anirban |4 aut | |
| 700 | 1 | |a O’Reilly, Lisa |4 aut | |
| 700 | 1 | |a Lucas, Olibanji F. |4 aut | |
| 700 | 1 | |a Cowley, Aidan |4 aut | |
| 700 | 1 | |a McNally, Patrick J. |4 aut | |
| 700 | 1 | |a Foy, Barry |4 aut | |
| 700 | 1 | |a McGlynn, Enda |4 aut | |
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10.1007/s10854-007-9448-5 doi (DE-627)OLC202625589X (DE-He213)s10854-007-9448-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Danieluk, Dominik verfasserin aut Optical properties of undoped and oxygen doped CuCl films on silicon substrates 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2007 Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. CuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth Bradley, Ann L. aut Mitra, Anirban aut O’Reilly, Lisa aut Lucas, Olibanji F. aut Cowley, Aidan aut McNally, Patrick J. aut Foy, Barry aut McGlynn, Enda aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 https://doi.org/10.1007/s10854-007-9448-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 20 2007 Suppl 1 27 11 76-80 |
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10.1007/s10854-007-9448-5 doi (DE-627)OLC202625589X (DE-He213)s10854-007-9448-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Danieluk, Dominik verfasserin aut Optical properties of undoped and oxygen doped CuCl films on silicon substrates 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2007 Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. CuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth Bradley, Ann L. aut Mitra, Anirban aut O’Reilly, Lisa aut Lucas, Olibanji F. aut Cowley, Aidan aut McNally, Patrick J. aut Foy, Barry aut McGlynn, Enda aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 https://doi.org/10.1007/s10854-007-9448-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 20 2007 Suppl 1 27 11 76-80 |
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10.1007/s10854-007-9448-5 doi (DE-627)OLC202625589X (DE-He213)s10854-007-9448-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Danieluk, Dominik verfasserin aut Optical properties of undoped and oxygen doped CuCl films on silicon substrates 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2007 Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. CuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth Bradley, Ann L. aut Mitra, Anirban aut O’Reilly, Lisa aut Lucas, Olibanji F. aut Cowley, Aidan aut McNally, Patrick J. aut Foy, Barry aut McGlynn, Enda aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 https://doi.org/10.1007/s10854-007-9448-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 20 2007 Suppl 1 27 11 76-80 |
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10.1007/s10854-007-9448-5 doi (DE-627)OLC202625589X (DE-He213)s10854-007-9448-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Danieluk, Dominik verfasserin aut Optical properties of undoped and oxygen doped CuCl films on silicon substrates 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2007 Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. CuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth Bradley, Ann L. aut Mitra, Anirban aut O’Reilly, Lisa aut Lucas, Olibanji F. aut Cowley, Aidan aut McNally, Patrick J. aut Foy, Barry aut McGlynn, Enda aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 https://doi.org/10.1007/s10854-007-9448-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 20 2007 Suppl 1 27 11 76-80 |
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10.1007/s10854-007-9448-5 doi (DE-627)OLC202625589X (DE-He213)s10854-007-9448-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Danieluk, Dominik verfasserin aut Optical properties of undoped and oxygen doped CuCl films on silicon substrates 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2007 Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. CuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth Bradley, Ann L. aut Mitra, Anirban aut O’Reilly, Lisa aut Lucas, Olibanji F. aut Cowley, Aidan aut McNally, Patrick J. aut Foy, Barry aut McGlynn, Enda aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 https://doi.org/10.1007/s10854-007-9448-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 20 2007 Suppl 1 27 11 76-80 |
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Enthalten in Journal of materials science / Materials in electronics 20(2007), Suppl 1 vom: 27. Nov., Seite 76-80 volume:20 year:2007 number:Suppl 1 day:27 month:11 pages:76-80 |
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Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. © Springer Science+Business Media, LLC 2007 |
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Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. © Springer Science+Business Media, LLC 2007 |
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Abstract Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour. © Springer Science+Business Media, LLC 2007 |
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