Investigation on deep level defects in rapid thermal annealed undoped n-type InP
Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, thre...
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Gespeichert in:
| Autor*in: |
Janardhanam, V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2009 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 21(2009), 3 vom: 07. Mai, Seite 285-290 |
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| Übergeordnetes Werk: |
volume:21 ; year:2009 ; number:3 ; day:07 ; month:05 ; pages:285-290 |
| Links: |
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| DOI / URN: |
10.1007/s10854-009-9906-3 |
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| Katalog-ID: |
OLC2026257884 |
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| 245 | 1 | 0 | |a Investigation on deep level defects in rapid thermal annealed undoped n-type InP |
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| 520 | |a Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. | ||
| 650 | 4 | |a Deep Level | |
| 650 | 4 | |a Deep Level Transient Spectroscopy | |
| 650 | 4 | |a Defect Level | |
| 650 | 4 | |a Antisite Defect | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Spectrum | |
| 700 | 1 | |a Ashok Kumar, A. |4 aut | |
| 700 | 1 | |a Rajagopal Reddy, V. |4 aut | |
| 700 | 1 | |a Narasimha Reddy, P. |4 aut | |
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10.1007/s10854-009-9906-3 doi (DE-627)OLC2026257884 (DE-He213)s10854-009-9906-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2009 Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level Deep Level Transient Spectroscopy Defect Level Antisite Defect Deep Level Transient Spectroscopy Spectrum Ashok Kumar, A. aut Rajagopal Reddy, V. aut Narasimha Reddy, P. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)OLC2026257884 (DE-He213)s10854-009-9906-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2009 Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level Deep Level Transient Spectroscopy Defect Level Antisite Defect Deep Level Transient Spectroscopy Spectrum Ashok Kumar, A. aut Rajagopal Reddy, V. aut Narasimha Reddy, P. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)OLC2026257884 (DE-He213)s10854-009-9906-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2009 Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level Deep Level Transient Spectroscopy Defect Level Antisite Defect Deep Level Transient Spectroscopy Spectrum Ashok Kumar, A. aut Rajagopal Reddy, V. aut Narasimha Reddy, P. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)OLC2026257884 (DE-He213)s10854-009-9906-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2009 Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level Deep Level Transient Spectroscopy Defect Level Antisite Defect Deep Level Transient Spectroscopy Spectrum Ashok Kumar, A. aut Rajagopal Reddy, V. aut Narasimha Reddy, P. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)OLC2026257884 (DE-He213)s10854-009-9906-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2009 Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level Deep Level Transient Spectroscopy Defect Level Antisite Defect Deep Level Transient Spectroscopy Spectrum Ashok Kumar, A. aut Rajagopal Reddy, V. aut Narasimha Reddy, P. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 21 2009 3 07 05 285-290 |
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Investigation on deep level defects in rapid thermal annealed undoped n-type InP |
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Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. © Springer Science+Business Media, LLC 2009 |
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Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. © Springer Science+Business Media, LLC 2009 |
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Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} $$ H_{4} $ existing in InP wafer. The results show that $ V_{In} $$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. © Springer Science+Business Media, LLC 2009 |
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