Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method
Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some...
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| Autor*in: |
Vinod, P. N. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 22(2011), 9 vom: 26. Jan., Seite 1248-1257 |
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| Übergeordnetes Werk: |
volume:22 ; year:2011 ; number:9 ; day:26 ; month:01 ; pages:1248-1257 |
| Links: |
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| DOI / URN: |
10.1007/s10854-011-0295-z |
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| Katalog-ID: |
OLC2026261989 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2026261989 | ||
| 003 | DE-627 | ||
| 005 | 20230503125425.0 | ||
| 007 | tu | ||
| 008 | 200820s2011 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10854-011-0295-z |2 doi | |
| 035 | |a (DE-627)OLC2026261989 | ||
| 035 | |a (DE-He213)s10854-011-0295-z-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
| 100 | 1 | |a Vinod, P. N. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| 264 | 1 | |c 2011 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media, LLC 2011 | ||
| 520 | |a Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. | ||
| 650 | 4 | |a Contact Resistance | |
| 650 | 4 | |a Porous Silicon | |
| 650 | 4 | |a Sheet Resistance | |
| 650 | 4 | |a Contact Structure | |
| 650 | 4 | |a Metal Contact | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 22(2011), 9 vom: 26. Jan., Seite 1248-1257 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
| 773 | 1 | 8 | |g volume:22 |g year:2011 |g number:9 |g day:26 |g month:01 |g pages:1248-1257 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s10854-011-0295-z |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4323 | ||
| 951 | |a AR | ||
| 952 | |d 22 |j 2011 |e 9 |b 26 |c 01 |h 1248-1257 | ||
| author_variant |
p n v pn pnv |
|---|---|
| matchkey_str |
article:09574522:2011----::pcfcotcrssacmaueetotecenrneatikimotcsnhslcnoaclsyhe |
| hierarchy_sort_str |
2011 |
| publishDate |
2011 |
| allfields |
10.1007/s10854-011-0295-z doi (DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vinod, P. N. verfasserin aut Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2011 Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 22(2011), 9 vom: 26. Jan., Seite 1248-1257 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 https://doi.org/10.1007/s10854-011-0295-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 22 2011 9 26 01 1248-1257 |
| spelling |
10.1007/s10854-011-0295-z doi (DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vinod, P. N. verfasserin aut Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2011 Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 22(2011), 9 vom: 26. Jan., Seite 1248-1257 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 https://doi.org/10.1007/s10854-011-0295-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 22 2011 9 26 01 1248-1257 |
| allfields_unstemmed |
10.1007/s10854-011-0295-z doi (DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vinod, P. N. verfasserin aut Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2011 Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 22(2011), 9 vom: 26. Jan., Seite 1248-1257 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 https://doi.org/10.1007/s10854-011-0295-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 22 2011 9 26 01 1248-1257 |
| allfieldsGer |
10.1007/s10854-011-0295-z doi (DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vinod, P. N. verfasserin aut Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2011 Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 22(2011), 9 vom: 26. Jan., Seite 1248-1257 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 https://doi.org/10.1007/s10854-011-0295-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 22 2011 9 26 01 1248-1257 |
| allfieldsSound |
10.1007/s10854-011-0295-z doi (DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Vinod, P. N. verfasserin aut Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2011 Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 22(2011), 9 vom: 26. Jan., Seite 1248-1257 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 https://doi.org/10.1007/s10854-011-0295-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 22 2011 9 26 01 1248-1257 |
| language |
English |
| source |
Enthalten in Journal of materials science / Materials in electronics 22(2011), 9 vom: 26. Jan., Seite 1248-1257 volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 |
| sourceStr |
Enthalten in Journal of materials science / Materials in electronics 22(2011), 9 vom: 26. Jan., Seite 1248-1257 volume:22 year:2011 number:9 day:26 month:01 pages:1248-1257 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact |
| dewey-raw |
600 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science / Materials in electronics |
| authorswithroles_txt_mv |
Vinod, P. N. @@aut@@ |
| publishDateDaySort_date |
2011-01-26T00:00:00Z |
| hierarchy_top_id |
130863289 |
| dewey-sort |
3600 |
| id |
OLC2026261989 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026261989</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125425.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2011 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-011-0295-z</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026261989</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-011-0295-z-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Vinod, P. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2011</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sheet Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact Structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal Contact</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">22(2011), 9 vom: 26. Jan., Seite 1248-1257</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:22</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:9</subfield><subfield code="g">day:26</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:1248-1257</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-011-0295-z</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">22</subfield><subfield code="j">2011</subfield><subfield code="e">9</subfield><subfield code="b">26</subfield><subfield code="c">01</subfield><subfield code="h">1248-1257</subfield></datafield></record></collection>
|
| author |
Vinod, P. N. |
| spellingShingle |
Vinod, P. N. ddc 600 misc Contact Resistance misc Porous Silicon misc Sheet Resistance misc Contact Structure misc Metal Contact Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| authorStr |
Vinod, P. N. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
| format |
Article |
| dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0957-4522 |
| topic_title |
600 670 620 VZ Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method Contact Resistance Porous Silicon Sheet Resistance Contact Structure Metal Contact |
| topic |
ddc 600 misc Contact Resistance misc Porous Silicon misc Sheet Resistance misc Contact Structure misc Metal Contact |
| topic_unstemmed |
ddc 600 misc Contact Resistance misc Porous Silicon misc Sheet Resistance misc Contact Structure misc Metal Contact |
| topic_browse |
ddc 600 misc Contact Resistance misc Porous Silicon misc Sheet Resistance misc Contact Structure misc Metal Contact |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science / Materials in electronics |
| hierarchy_parent_id |
130863289 |
| dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
| hierarchy_top_title |
Journal of materials science / Materials in electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
| title |
Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| ctrlnum |
(DE-627)OLC2026261989 (DE-He213)s10854-011-0295-z-p |
| title_full |
Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| author_sort |
Vinod, P. N. |
| journal |
Journal of materials science / Materials in electronics |
| journalStr |
Journal of materials science / Materials in electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2011 |
| contenttype_str_mv |
txt |
| container_start_page |
1248 |
| author_browse |
Vinod, P. N. |
| container_volume |
22 |
| class |
600 670 620 VZ |
| format_se |
Aufsätze |
| author-letter |
Vinod, P. N. |
| doi_str_mv |
10.1007/s10854-011-0295-z |
| dewey-full |
600 670 620 |
| title_sort |
specific contact resistance measurements of the screen-printed ag thick film contacts in the silicon solar cells by three-point probe methodology and tlm method |
| title_auth |
Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| abstract |
Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. © Springer Science+Business Media, LLC 2011 |
| abstractGer |
Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. © Springer Science+Business Media, LLC 2011 |
| abstract_unstemmed |
Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed. © Springer Science+Business Media, LLC 2011 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 |
| container_issue |
9 |
| title_short |
Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method |
| url |
https://doi.org/10.1007/s10854-011-0295-z |
| remote_bool |
false |
| ppnlink |
130863289 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10854-011-0295-z |
| up_date |
2024-07-04T03:31:09.787Z |
| _version_ |
1803617692334161920 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026261989</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125425.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2011 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-011-0295-z</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026261989</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-011-0295-z-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Vinod, P. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2011</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The specific contact resistance of the screen-printed Ag contacts in the silicon solar cells has been investigated by applying two independent test methodologies such as three-point probe (TPP) and well-known transfer length model (TLM) test structure respectively. This paper presents some comparative results obtained with these two measurement techniques for the screen-printed Ag contacts formed on the porous silicon antireflection coating (ARC) in the crystalline silicon solar cells. The contact structure consists of thick-film Ag metal contacts patterned on the top of the etched porous silicon surface. Five different contact formation temperatures ranging from 725 to 825 °C for few minutes in air ambient followed by a short time annealing step at about 450 °C in nitrogen ambient was applied to the test samples in order to study the specific contact resistance of the screen-printed Ag metal contact structure. The specific contact resistance of the Ag metal contacts extracted based on the TPP as well as TLM test methodologies has been compared and verified. It shows that the extraction procedure based on the TPP method results in specific contact resistance, $ ρ_{c} $ = 2.15 × $ 10^{−6} $ Ω-$ cm^{2} $ indicating that screen-printed Ag contacts has excellent ohmic properties whereas in the case of TLM method, the best value of the specific contact resistance was found to be about $ ρ_{c} $ = 8.34 × $ 10^{−5} $ Ω-$ cm^{2} $. These results indicate that the $ ρ_{c} $ value extracted for the screen-printed Ag contacts by TPP method is one order of magnitude lower than that of the corresponding value of the $ ρ_{c} $ extracted by TLM method. The advantages and limitations of each of these techniques for quantitatively evaluating the specific contact resistance of the screen-printed Ag contacts are also discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Porous Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sheet Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact Structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal Contact</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">22(2011), 9 vom: 26. Jan., Seite 1248-1257</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:22</subfield><subfield code="g">year:2011</subfield><subfield code="g">number:9</subfield><subfield code="g">day:26</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:1248-1257</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-011-0295-z</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">22</subfield><subfield code="j">2011</subfield><subfield code="e">9</subfield><subfield code="b">26</subfield><subfield code="c">01</subfield><subfield code="h">1248-1257</subfield></datafield></record></collection>
|
| score |
7.3981 |