Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $
Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ c...
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Gespeichert in:
| Autor*in: |
Hou, Mei-zhen [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 23(2012), 9 vom: 19. Feb., Seite 1722-1727 |
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| Übergeordnetes Werk: |
volume:23 ; year:2012 ; number:9 ; day:19 ; month:02 ; pages:1722-1727 |
| Links: |
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| DOI / URN: |
10.1007/s10854-012-0653-5 |
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| Katalog-ID: |
OLC2026264910 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2026264910 | ||
| 003 | DE-627 | ||
| 005 | 20230503125452.0 | ||
| 007 | tu | ||
| 008 | 200820s2012 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10854-012-0653-5 |2 doi | |
| 035 | |a (DE-627)OLC2026264910 | ||
| 035 | |a (DE-He213)s10854-012-0653-5-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
| 100 | 1 | |a Hou, Mei-zhen |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| 264 | 1 | |c 2012 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media, LLC 2012 | ||
| 520 | |a Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. | ||
| 650 | 4 | |a TiO2 | |
| 650 | 4 | |a Microwave Dielectric Property | |
| 650 | 4 | |a Glass Composite | |
| 650 | 4 | |a TiO2 Ceramic | |
| 650 | 4 | |a Glass Addition | |
| 700 | 1 | |a Chen, Guo-hua |4 aut | |
| 700 | 1 | |a Bao, Yan |4 aut | |
| 700 | 1 | |a Yang, Yun |4 aut | |
| 700 | 1 | |a Yuan, Chang-lai |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 23(2012), 9 vom: 19. Feb., Seite 1722-1727 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
| 773 | 1 | 8 | |g volume:23 |g year:2012 |g number:9 |g day:19 |g month:02 |g pages:1722-1727 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s10854-012-0653-5 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4323 | ||
| 951 | |a AR | ||
| 952 | |d 23 |j 2012 |e 9 |b 19 |c 02 |h 1722-1727 | ||
| author_variant |
m z h mzh g h c ghc y b yb y y yy c l y cly |
|---|---|
| matchkey_str |
article:09574522:2012----::otmeaueiignmcoaeilcrcrprisfbgasdel_z |
| hierarchy_sort_str |
2012 |
| publishDate |
2012 |
| allfields |
10.1007/s10854-012-0653-5 doi (DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Hou, Mei-zhen verfasserin aut Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2012 Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition Chen, Guo-hua aut Bao, Yan aut Yang, Yun aut Yuan, Chang-lai aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 23(2012), 9 vom: 19. Feb., Seite 1722-1727 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 https://doi.org/10.1007/s10854-012-0653-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 23 2012 9 19 02 1722-1727 |
| spelling |
10.1007/s10854-012-0653-5 doi (DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Hou, Mei-zhen verfasserin aut Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2012 Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition Chen, Guo-hua aut Bao, Yan aut Yang, Yun aut Yuan, Chang-lai aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 23(2012), 9 vom: 19. Feb., Seite 1722-1727 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 https://doi.org/10.1007/s10854-012-0653-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 23 2012 9 19 02 1722-1727 |
| allfields_unstemmed |
10.1007/s10854-012-0653-5 doi (DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Hou, Mei-zhen verfasserin aut Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2012 Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition Chen, Guo-hua aut Bao, Yan aut Yang, Yun aut Yuan, Chang-lai aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 23(2012), 9 vom: 19. Feb., Seite 1722-1727 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 https://doi.org/10.1007/s10854-012-0653-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 23 2012 9 19 02 1722-1727 |
| allfieldsGer |
10.1007/s10854-012-0653-5 doi (DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Hou, Mei-zhen verfasserin aut Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2012 Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition Chen, Guo-hua aut Bao, Yan aut Yang, Yun aut Yuan, Chang-lai aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 23(2012), 9 vom: 19. Feb., Seite 1722-1727 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 https://doi.org/10.1007/s10854-012-0653-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 23 2012 9 19 02 1722-1727 |
| allfieldsSound |
10.1007/s10854-012-0653-5 doi (DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Hou, Mei-zhen verfasserin aut Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC 2012 Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition Chen, Guo-hua aut Bao, Yan aut Yang, Yun aut Yuan, Chang-lai aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 23(2012), 9 vom: 19. Feb., Seite 1722-1727 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 https://doi.org/10.1007/s10854-012-0653-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 23 2012 9 19 02 1722-1727 |
| language |
English |
| source |
Enthalten in Journal of materials science / Materials in electronics 23(2012), 9 vom: 19. Feb., Seite 1722-1727 volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 |
| sourceStr |
Enthalten in Journal of materials science / Materials in electronics 23(2012), 9 vom: 19. Feb., Seite 1722-1727 volume:23 year:2012 number:9 day:19 month:02 pages:1722-1727 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition |
| dewey-raw |
600 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science / Materials in electronics |
| authorswithroles_txt_mv |
Hou, Mei-zhen @@aut@@ Chen, Guo-hua @@aut@@ Bao, Yan @@aut@@ Yang, Yun @@aut@@ Yuan, Chang-lai @@aut@@ |
| publishDateDaySort_date |
2012-02-19T00:00:00Z |
| hierarchy_top_id |
130863289 |
| dewey-sort |
3600 |
| id |
OLC2026264910 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026264910</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125452.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2012 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-012-0653-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026264910</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-012-0653-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hou, Mei-zhen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO2</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave Dielectric Property</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass Composite</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO2 Ceramic</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass Addition</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Guo-hua</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bao, Yan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Yun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yuan, Chang-lai</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">23(2012), 9 vom: 19. Feb., Seite 1722-1727</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2012</subfield><subfield code="g">number:9</subfield><subfield code="g">day:19</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:1722-1727</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-012-0653-5</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2012</subfield><subfield code="e">9</subfield><subfield code="b">19</subfield><subfield code="c">02</subfield><subfield code="h">1722-1727</subfield></datafield></record></collection>
|
| author |
Hou, Mei-zhen |
| spellingShingle |
Hou, Mei-zhen ddc 600 misc TiO2 misc Microwave Dielectric Property misc Glass Composite misc TiO2 Ceramic misc Glass Addition Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| authorStr |
Hou, Mei-zhen |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
| format |
Article |
| dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0957-4522 |
| topic_title |
600 670 620 VZ Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ TiO2 Microwave Dielectric Property Glass Composite TiO2 Ceramic Glass Addition |
| topic |
ddc 600 misc TiO2 misc Microwave Dielectric Property misc Glass Composite misc TiO2 Ceramic misc Glass Addition |
| topic_unstemmed |
ddc 600 misc TiO2 misc Microwave Dielectric Property misc Glass Composite misc TiO2 Ceramic misc Glass Addition |
| topic_browse |
ddc 600 misc TiO2 misc Microwave Dielectric Property misc Glass Composite misc TiO2 Ceramic misc Glass Addition |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science / Materials in electronics |
| hierarchy_parent_id |
130863289 |
| dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
| hierarchy_top_title |
Journal of materials science / Materials in electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
| title |
Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| ctrlnum |
(DE-627)OLC2026264910 (DE-He213)s10854-012-0653-5-p |
| title_full |
Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| author_sort |
Hou, Mei-zhen |
| journal |
Journal of materials science / Materials in electronics |
| journalStr |
Journal of materials science / Materials in electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2012 |
| contenttype_str_mv |
txt |
| container_start_page |
1722 |
| author_browse |
Hou, Mei-zhen Chen, Guo-hua Bao, Yan Yang, Yun Yuan, Chang-lai |
| container_volume |
23 |
| class |
600 670 620 VZ |
| format_se |
Aufsätze |
| author-letter |
Hou, Mei-zhen |
| doi_str_mv |
10.1007/s10854-012-0653-5 |
| dewey-full |
600 670 620 |
| title_sort |
low-temperature firing and microwave dielectric properties of lbs glass-added $ li_{2} $$ znti_{3} $$ o_{8} $ ceramics with $ tio_{2} $ |
| title_auth |
Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| abstract |
Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. © Springer Science+Business Media, LLC 2012 |
| abstractGer |
Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. © Springer Science+Business Media, LLC 2012 |
| abstract_unstemmed |
Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices. © Springer Science+Business Media, LLC 2012 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 |
| container_issue |
9 |
| title_short |
Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $ |
| url |
https://doi.org/10.1007/s10854-012-0653-5 |
| remote_bool |
false |
| author2 |
Chen, Guo-hua Bao, Yan Yang, Yun Yuan, Chang-lai |
| author2Str |
Chen, Guo-hua Bao, Yan Yang, Yun Yuan, Chang-lai |
| ppnlink |
130863289 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10854-012-0653-5 |
| up_date |
2024-07-04T03:31:37.800Z |
| _version_ |
1803617721706872832 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026264910</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125452.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2012 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-012-0653-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026264910</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-012-0653-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hou, Mei-zhen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Low-temperature firing and microwave dielectric properties of LBS glass-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics with $ TiO_{2} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Temperature stable $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ dielectric ceramics with $ Li_{2} $O–$ B_{2} $$ O_{3} $–$ SiO_{2} $ (LBS) glass additive and $ TiO_{2} $ dopant have been prepared by the conventional solid-state ceramic route. The sintering temperature of $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ ceramics can be reduced from 1,050 to 875 °C by doping LBS glass additive. The 1 wt% LBS-added $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ sintered at 875 °C/4 h has $ ε_{r} $ = 23.9, Q × f = 40,503 GHz, and $ τ_{f} $ = −13.4 ppm/°C. Adding appropriate amount of $ TiO_{2} $ can effectively adjust the temperature coefficient of resonant frequency ($ τ_{f} $) and improve the dielectric properties. Typically, the $ Li_{2} $$ ZnTi_{3} $$ O_{8} $ + 1 wt% LBS + 3.5 wt% $ TiO_{2} $ sintered at 875 °C shows excellent dielectric properties of $ ε_{r} $ = 26, Q × f = 44,023 GHz, $ τ_{f} $ = −4.4 ppm/°C. Compatibility with Ag electrode indicates this material may be applied to low temperature co-fired ceramic devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO2</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave Dielectric Property</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass Composite</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TiO2 Ceramic</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass Addition</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Guo-hua</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bao, Yan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Yun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yuan, Chang-lai</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">23(2012), 9 vom: 19. Feb., Seite 1722-1727</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:23</subfield><subfield code="g">year:2012</subfield><subfield code="g">number:9</subfield><subfield code="g">day:19</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:1722-1727</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-012-0653-5</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">23</subfield><subfield code="j">2012</subfield><subfield code="e">9</subfield><subfield code="b">19</subfield><subfield code="c">02</subfield><subfield code="h">1722-1727</subfield></datafield></record></collection>
|
| score |
7.4012194 |