Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment su...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chroneos, A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 24(2013), 8 vom: 09. März, Seite 2772-2776 |
|---|---|
| Übergeordnetes Werk: |
volume:24 ; year:2013 ; number:8 ; day:09 ; month:03 ; pages:2772-2776 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10854-013-1169-3 |
|---|
| Katalog-ID: |
OLC2026270228 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2026270228 | ||
| 003 | DE-627 | ||
| 005 | 20230503125537.0 | ||
| 007 | tu | ||
| 008 | 200820s2013 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s10854-013-1169-3 |2 doi | |
| 035 | |a (DE-627)OLC2026270228 | ||
| 035 | |a (DE-He213)s10854-013-1169-3-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
| 100 | 1 | |a Chroneos, A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| 264 | 1 | |c 2013 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Springer Science+Business Media New York 2013 | ||
| 520 | |a Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. | ||
| 650 | 4 | |a Near Neighbour | |
| 650 | 4 | |a Defect Pair | |
| 650 | 4 | |a Random Alloy | |
| 650 | 4 | |a Near Neighbour Atom | |
| 650 | 4 | |a Special Quasirandom Structure | |
| 700 | 1 | |a Sgourou, E. N. |4 aut | |
| 700 | 1 | |a Londos, C. A. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 24(2013), 8 vom: 09. März, Seite 2772-2776 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
| 773 | 1 | 8 | |g volume:24 |g year:2013 |g number:8 |g day:09 |g month:03 |g pages:2772-2776 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s10854-013-1169-3 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4323 | ||
| 951 | |a AR | ||
| 952 | |d 24 |j 2013 |e 8 |b 09 |c 03 |h 2772-2776 | ||
| author_variant |
a c ac e n s en ens c a l ca cal |
|---|---|
| matchkey_str |
article:09574522:2013----::matfhgraimocnrtoitetbltoeetr |
| hierarchy_sort_str |
2013 |
| publishDate |
2013 |
| allfields |
10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
| spelling |
10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
| allfields_unstemmed |
10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
| allfieldsGer |
10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
| allfieldsSound |
10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
| language |
English |
| source |
Enthalten in Journal of materials science / Materials in electronics 24(2013), 8 vom: 09. März, Seite 2772-2776 volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 |
| sourceStr |
Enthalten in Journal of materials science / Materials in electronics 24(2013), 8 vom: 09. März, Seite 2772-2776 volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure |
| dewey-raw |
600 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science / Materials in electronics |
| authorswithroles_txt_mv |
Chroneos, A. @@aut@@ Sgourou, E. N. @@aut@@ Londos, C. A. @@aut@@ |
| publishDateDaySort_date |
2013-03-09T00:00:00Z |
| hierarchy_top_id |
130863289 |
| dewey-sort |
3600 |
| id |
OLC2026270228 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026270228</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125537.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-013-1169-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026270228</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-013-1169-3-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chroneos, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near Neighbour</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Defect Pair</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Random Alloy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near Neighbour Atom</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Special Quasirandom Structure</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sgourou, E. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Londos, C. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">24(2013), 8 vom: 09. März, Seite 2772-2776</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:8</subfield><subfield code="g">day:09</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:2772-2776</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-013-1169-3</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">2013</subfield><subfield code="e">8</subfield><subfield code="b">09</subfield><subfield code="c">03</subfield><subfield code="h">2772-2776</subfield></datafield></record></collection>
|
| author |
Chroneos, A. |
| spellingShingle |
Chroneos, A. ddc 600 misc Near Neighbour misc Defect Pair misc Random Alloy misc Near Neighbour Atom misc Special Quasirandom Structure Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| authorStr |
Chroneos, A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
| format |
Article |
| dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0957-4522 |
| topic_title |
600 670 620 VZ Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure |
| topic |
ddc 600 misc Near Neighbour misc Defect Pair misc Random Alloy misc Near Neighbour Atom misc Special Quasirandom Structure |
| topic_unstemmed |
ddc 600 misc Near Neighbour misc Defect Pair misc Random Alloy misc Near Neighbour Atom misc Special Quasirandom Structure |
| topic_browse |
ddc 600 misc Near Neighbour misc Defect Pair misc Random Alloy misc Near Neighbour Atom misc Special Quasirandom Structure |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science / Materials in electronics |
| hierarchy_parent_id |
130863289 |
| dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
| hierarchy_top_title |
Journal of materials science / Materials in electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
| title |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| ctrlnum |
(DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p |
| title_full |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| author_sort |
Chroneos, A. |
| journal |
Journal of materials science / Materials in electronics |
| journalStr |
Journal of materials science / Materials in electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2013 |
| contenttype_str_mv |
txt |
| container_start_page |
2772 |
| author_browse |
Chroneos, A. Sgourou, E. N. Londos, C. A. |
| container_volume |
24 |
| class |
600 670 620 VZ |
| format_se |
Aufsätze |
| author-letter |
Chroneos, A. |
| doi_str_mv |
10.1007/s10854-013-1169-3 |
| dewey-full |
600 670 620 |
| title_sort |
impact of the germanium concentration in the stability of e-centers and a-centers in $ si_{1−x} $$ ge_{x} $ |
| title_auth |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| abstract |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
| abstractGer |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
| abstract_unstemmed |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 |
| container_issue |
8 |
| title_short |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
| url |
https://doi.org/10.1007/s10854-013-1169-3 |
| remote_bool |
false |
| author2 |
Sgourou, E. N. Londos, C. A. |
| author2Str |
Sgourou, E. N. Londos, C. A. |
| ppnlink |
130863289 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s10854-013-1169-3 |
| up_date |
2024-07-04T03:32:29.528Z |
| _version_ |
1803617775947612160 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026270228</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125537.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-013-1169-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026270228</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-013-1169-3-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chroneos, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near Neighbour</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Defect Pair</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Random Alloy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near Neighbour Atom</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Special Quasirandom Structure</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sgourou, E. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Londos, C. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">24(2013), 8 vom: 09. März, Seite 2772-2776</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:8</subfield><subfield code="g">day:09</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:2772-2776</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-013-1169-3</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">2013</subfield><subfield code="e">8</subfield><subfield code="b">09</subfield><subfield code="c">03</subfield><subfield code="h">2772-2776</subfield></datafield></record></collection>
|
| score |
7.3978424 |