Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment su...
Ausführliche Beschreibung
Autor*in: |
Chroneos, A. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2013 |
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Schlagwörter: |
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Anmerkung: |
© Springer Science+Business Media New York 2013 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 24(2013), 8 vom: 09. März, Seite 2772-2776 |
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Übergeordnetes Werk: |
volume:24 ; year:2013 ; number:8 ; day:09 ; month:03 ; pages:2772-2776 |
Links: |
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DOI / URN: |
10.1007/s10854-013-1169-3 |
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Katalog-ID: |
OLC2026270228 |
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10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
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10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
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10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
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10.1007/s10854-013-1169-3 doi (DE-627)OLC2026270228 (DE-He213)s10854-013-1169-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Chroneos, A. verfasserin aut Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. Near Neighbour Defect Pair Random Alloy Near Neighbour Atom Special Quasirandom Structure Sgourou, E. N. aut Londos, C. A. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 8 vom: 09. März, Seite 2772-2776 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:8 day:09 month:03 pages:2772-2776 https://doi.org/10.1007/s10854-013-1169-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 8 09 03 2772-2776 |
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Journal of materials science / Materials in electronics |
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2013 |
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2772 |
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Chroneos, A. Sgourou, E. N. Londos, C. A. |
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24 |
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600 670 620 VZ |
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Chroneos, A. |
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10.1007/s10854-013-1169-3 |
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600 670 620 |
title_sort |
impact of the germanium concentration in the stability of e-centers and a-centers in $ si_{1−x} $$ ge_{x} $ |
title_auth |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
abstract |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
abstractGer |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
abstract_unstemmed |
Abstract Electronic structure calculations are used to investigate the association of lattice vacancies and oxygen interstitials (known as A-centers) and compare them to vacancy-phosphorous atom pairs (known as E-centers) in silicon germanium ($ Si_{1−x} $$ Ge_{x} $) alloys. The local environment surrounding the A-centers and E-centers is described by the application of the special quasirandom structures approach. It is calculated that the stability of the A-centers and the E-centers is not linearly dependent upon the germanium concentration. The nearest neighbor environment will exert a strong influence upon the stability of these defects. These defect pairs will behave differently with respect to the Ge concentration as the oxygen interstitial (in the A-center) and the phosphorous atom (in the E-center) interact with the host lattice in a different manner. The results are discussed in view of recent theoretical and experimental investigations. © Springer Science+Business Media New York 2013 |
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container_issue |
8 |
title_short |
Impact of the germanium concentration in the stability of E-centers and A-centers in $ Si_{1−x} $$ Ge_{x} $ |
url |
https://doi.org/10.1007/s10854-013-1169-3 |
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Sgourou, E. N. Londos, C. A. |
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up_date |
2024-07-04T03:32:29.528Z |
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