Thermal stress driven Sn whisker growth: in air and in vacuum
Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm pla...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jo, Jung-Lae [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 24(2013), 10 vom: 16. Juni, Seite 3897-3904 |
|---|---|
| Übergeordnetes Werk: |
volume:24 ; year:2013 ; number:10 ; day:16 ; month:06 ; pages:3897-3904 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10854-013-1336-6 |
|---|
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OLC2026271453 |
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| 520 | |a Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. | ||
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10.1007/s10854-013-1336-6 doi (DE-627)OLC2026271453 (DE-He213)s10854-013-1336-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jo, Jung-Lae verfasserin aut Thermal stress driven Sn whisker growth: in air and in vacuum 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. Thermal Cycle Whisker Growth Thermal Cycling Test Root Crack Whisker Density Nagao, Shijo aut Sugahara, Tohru aut Tsujimoto, Masanobu aut Suganuma, Katsuaki aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 10 vom: 16. Juni, Seite 3897-3904 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:10 day:16 month:06 pages:3897-3904 https://doi.org/10.1007/s10854-013-1336-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 10 16 06 3897-3904 |
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10.1007/s10854-013-1336-6 doi (DE-627)OLC2026271453 (DE-He213)s10854-013-1336-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jo, Jung-Lae verfasserin aut Thermal stress driven Sn whisker growth: in air and in vacuum 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. Thermal Cycle Whisker Growth Thermal Cycling Test Root Crack Whisker Density Nagao, Shijo aut Sugahara, Tohru aut Tsujimoto, Masanobu aut Suganuma, Katsuaki aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 10 vom: 16. Juni, Seite 3897-3904 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:10 day:16 month:06 pages:3897-3904 https://doi.org/10.1007/s10854-013-1336-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 10 16 06 3897-3904 |
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10.1007/s10854-013-1336-6 doi (DE-627)OLC2026271453 (DE-He213)s10854-013-1336-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jo, Jung-Lae verfasserin aut Thermal stress driven Sn whisker growth: in air and in vacuum 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. Thermal Cycle Whisker Growth Thermal Cycling Test Root Crack Whisker Density Nagao, Shijo aut Sugahara, Tohru aut Tsujimoto, Masanobu aut Suganuma, Katsuaki aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 10 vom: 16. Juni, Seite 3897-3904 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:10 day:16 month:06 pages:3897-3904 https://doi.org/10.1007/s10854-013-1336-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 10 16 06 3897-3904 |
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10.1007/s10854-013-1336-6 doi (DE-627)OLC2026271453 (DE-He213)s10854-013-1336-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Jo, Jung-Lae verfasserin aut Thermal stress driven Sn whisker growth: in air and in vacuum 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. Thermal Cycle Whisker Growth Thermal Cycling Test Root Crack Whisker Density Nagao, Shijo aut Sugahara, Tohru aut Tsujimoto, Masanobu aut Suganuma, Katsuaki aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 10 vom: 16. Juni, Seite 3897-3904 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:10 day:16 month:06 pages:3897-3904 https://doi.org/10.1007/s10854-013-1336-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 10 16 06 3897-3904 |
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Thermal stress driven Sn whisker growth: in air and in vacuum |
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Thermal stress driven Sn whisker growth: in air and in vacuum |
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Jo, Jung-Lae |
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Journal of materials science / Materials in electronics |
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Jo, Jung-Lae Nagao, Shijo Sugahara, Tohru Tsujimoto, Masanobu Suganuma, Katsuaki |
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10.1007/s10854-013-1336-6 |
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thermal stress driven sn whisker growth: in air and in vacuum |
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Thermal stress driven Sn whisker growth: in air and in vacuum |
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Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. © Springer Science+Business Media New York 2013 |
| abstractGer |
Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. © Springer Science+Business Media New York 2013 |
| abstract_unstemmed |
Abstract Whisker growths from matte tin electroplating have been observed during thermal cycling up to 1,000 cycles either in air or in vacuum. The density, length, and width of thermal stress whiskers depend on the plating thickness of 2 and 5 μm in the present study. Whiskers grown on the 2 μm plating are longer and thinner than those on 5 μm plating. In both cases, whiskers grow thinner and faster in vacuum than in air. These apparent variations come from the grain sizes and the thermal stress distributions in the electroplating, intrinsically different in 2 and 5 μm thick films. The grain structure of whisker root, particularly grain boundary cracks oxidized in air, determines the stress concentration to drive the whisker growth. Cracking caused by oxidation was rarely observed in vacuum hence causes thin and straight whiskers even from thick plating. Our results indicate that the stress concentration at whisker root grain is essential for controlling whisker growth morphology, and has a critical impact on various electronic applications. © Springer Science+Business Media New York 2013 |
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Thermal stress driven Sn whisker growth: in air and in vacuum |
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Nagao, Shijo Sugahara, Tohru Tsujimoto, Masanobu Suganuma, Katsuaki |
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