Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics
Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_...
Ausführliche Beschreibung
Autor*in: |
Nahm, Choon-W. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2013 |
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Schlagwörter: |
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Anmerkung: |
© Springer Science+Business Media New York 2013 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 24(2013), 12 vom: 13. Sept., Seite 4839-4846 |
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Übergeordnetes Werk: |
volume:24 ; year:2013 ; number:12 ; day:13 ; month:09 ; pages:4839-4846 |
Links: |
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DOI / URN: |
10.1007/s10854-013-1485-7 |
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Katalog-ID: |
OLC2026273189 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2026273189 | ||
003 | DE-627 | ||
005 | 20230503125509.0 | ||
007 | tu | ||
008 | 200820s2013 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/s10854-013-1485-7 |2 doi | |
035 | |a (DE-627)OLC2026273189 | ||
035 | |a (DE-He213)s10854-013-1485-7-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
100 | 1 | |a Nahm, Choon-W. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
264 | 1 | |c 2013 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Springer Science+Business Media New York 2013 | ||
520 | |a Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. | ||
650 | 4 | |a V2O5 | |
650 | 4 | |a Gd2O3 | |
650 | 4 | |a Vanadium Oxide | |
650 | 4 | |a Breakdown Field | |
650 | 4 | |a GdVO4 | |
773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 24(2013), 12 vom: 13. Sept., Seite 4839-4846 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
773 | 1 | 8 | |g volume:24 |g year:2013 |g number:12 |g day:13 |g month:09 |g pages:4839-4846 |
856 | 4 | 1 | |u https://doi.org/10.1007/s10854-013-1485-7 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_30 | ||
912 | |a GBV_ILN_32 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2015 | ||
912 | |a GBV_ILN_4046 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4323 | ||
951 | |a AR | ||
952 | |d 24 |j 2013 |e 12 |b 13 |c 09 |h 4839-4846 |
author_variant |
c w n cwn |
---|---|
matchkey_str |
article:09574522:2013----::fetfaoiiadtoovrsocaatrsisfaaimx |
hierarchy_sort_str |
2013 |
publishDate |
2013 |
allfields |
10.1007/s10854-013-1485-7 doi (DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nahm, Choon-W. verfasserin aut Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 12 vom: 13. Sept., Seite 4839-4846 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 https://doi.org/10.1007/s10854-013-1485-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 12 13 09 4839-4846 |
spelling |
10.1007/s10854-013-1485-7 doi (DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nahm, Choon-W. verfasserin aut Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 12 vom: 13. Sept., Seite 4839-4846 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 https://doi.org/10.1007/s10854-013-1485-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 12 13 09 4839-4846 |
allfields_unstemmed |
10.1007/s10854-013-1485-7 doi (DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nahm, Choon-W. verfasserin aut Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 12 vom: 13. Sept., Seite 4839-4846 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 https://doi.org/10.1007/s10854-013-1485-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 12 13 09 4839-4846 |
allfieldsGer |
10.1007/s10854-013-1485-7 doi (DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nahm, Choon-W. verfasserin aut Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 12 vom: 13. Sept., Seite 4839-4846 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 https://doi.org/10.1007/s10854-013-1485-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 12 13 09 4839-4846 |
allfieldsSound |
10.1007/s10854-013-1485-7 doi (DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nahm, Choon-W. verfasserin aut Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2013 Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 24(2013), 12 vom: 13. Sept., Seite 4839-4846 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 https://doi.org/10.1007/s10854-013-1485-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 24 2013 12 13 09 4839-4846 |
language |
English |
source |
Enthalten in Journal of materials science / Materials in electronics 24(2013), 12 vom: 13. Sept., Seite 4839-4846 volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 |
sourceStr |
Enthalten in Journal of materials science / Materials in electronics 24(2013), 12 vom: 13. Sept., Seite 4839-4846 volume:24 year:2013 number:12 day:13 month:09 pages:4839-4846 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 |
dewey-raw |
600 |
isfreeaccess_bool |
false |
container_title |
Journal of materials science / Materials in electronics |
authorswithroles_txt_mv |
Nahm, Choon-W. @@aut@@ |
publishDateDaySort_date |
2013-09-13T00:00:00Z |
hierarchy_top_id |
130863289 |
dewey-sort |
3600 |
id |
OLC2026273189 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026273189</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125509.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-013-1485-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026273189</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-013-1485-7-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nahm, Choon-W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">V2O5</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gd2O3</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Vanadium Oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Breakdown Field</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GdVO4</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">24(2013), 12 vom: 13. Sept., Seite 4839-4846</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:12</subfield><subfield code="g">day:13</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:4839-4846</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-013-1485-7</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">2013</subfield><subfield code="e">12</subfield><subfield code="b">13</subfield><subfield code="c">09</subfield><subfield code="h">4839-4846</subfield></datafield></record></collection>
|
author |
Nahm, Choon-W. |
spellingShingle |
Nahm, Choon-W. ddc 600 misc V2O5 misc Gd2O3 misc Vanadium Oxide misc Breakdown Field misc GdVO4 Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
authorStr |
Nahm, Choon-W. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
format |
Article |
dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
delete_txt_mv |
keep |
author_role |
aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0957-4522 |
topic_title |
600 670 620 VZ Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics V2O5 Gd2O3 Vanadium Oxide Breakdown Field GdVO4 |
topic |
ddc 600 misc V2O5 misc Gd2O3 misc Vanadium Oxide misc Breakdown Field misc GdVO4 |
topic_unstemmed |
ddc 600 misc V2O5 misc Gd2O3 misc Vanadium Oxide misc Breakdown Field misc GdVO4 |
topic_browse |
ddc 600 misc V2O5 misc Gd2O3 misc Vanadium Oxide misc Breakdown Field misc GdVO4 |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Journal of materials science / Materials in electronics |
hierarchy_parent_id |
130863289 |
dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
hierarchy_top_title |
Journal of materials science / Materials in electronics |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
title |
Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
ctrlnum |
(DE-627)OLC2026273189 (DE-He213)s10854-013-1485-7-p |
title_full |
Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
author_sort |
Nahm, Choon-W. |
journal |
Journal of materials science / Materials in electronics |
journalStr |
Journal of materials science / Materials in electronics |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology |
recordtype |
marc |
publishDateSort |
2013 |
contenttype_str_mv |
txt |
container_start_page |
4839 |
author_browse |
Nahm, Choon-W. |
container_volume |
24 |
class |
600 670 620 VZ |
format_se |
Aufsätze |
author-letter |
Nahm, Choon-W. |
doi_str_mv |
10.1007/s10854-013-1485-7 |
dewey-full |
600 670 620 |
title_sort |
effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
title_auth |
Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
abstract |
Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. © Springer Science+Business Media New York 2013 |
abstractGer |
Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. © Springer Science+Business Media New York 2013 |
abstract_unstemmed |
Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. © Springer Science+Business Media New York 2013 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 |
container_issue |
12 |
title_short |
Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics |
url |
https://doi.org/10.1007/s10854-013-1485-7 |
remote_bool |
false |
ppnlink |
130863289 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1007/s10854-013-1485-7 |
up_date |
2024-07-04T03:32:58.089Z |
_version_ |
1803617805895991296 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026273189</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503125509.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2013 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-013-1485-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026273189</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-013-1485-7-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nahm, Choon-W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of gadolinia addition on varistor characteristics of vanadium oxide–doped zinc oxide ceramics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2013</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The effect of gadolinia addition on microstructure, electrical and dielectric characteristics, and aging behavior of vanadium oxide–doped zinc oxide varistor ceramics was systematically investigated. The average grain size decreased from 5.6 to 5.2 μm with an increase in the amount of $ Gd_{2} $$ O_{3} $ up to 0.1 mol%, whereas a further increase caused it to increase to 5.7 μm at 0.25 mol%. The sintered densities decreased from 5.51 to 5.44 g/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $. With increasing the amount of $ Gd_{2} $$ O_{3} $, the breakdown field increased from 4,800 to 5,365 V/cm up to 0.05 mol%, whereas a further increase decreased it to 4,781 V/cm at 0.25 mol%. The varistor ceramics modified with 0.05 mol% $ Gd_{2} $$ O_{3} $ exhibited excellent nonlinear properties, with 66.1 in the nonlinear coefficient, whereas a further increase caused it to decrease to 17.6 at 0.25 mol%. The gadolinium acted like a donor, based on the electron concentration increasing from 4.20 × $ 10^{17} $/$ cm^{3} $ to 7.38 × $ 10^{17} $/$ cm^{3} $ with an increase in the amount of $ Gd_{2} $$ O_{3} $.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">V2O5</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gd2O3</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Vanadium Oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Breakdown Field</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GdVO4</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">24(2013), 12 vom: 13. Sept., Seite 4839-4846</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:2013</subfield><subfield code="g">number:12</subfield><subfield code="g">day:13</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:4839-4846</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-013-1485-7</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">2013</subfield><subfield code="e">12</subfield><subfield code="b">13</subfield><subfield code="c">09</subfield><subfield code="h">4839-4846</subfield></datafield></record></collection>
|
score |
7.399703 |