Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electroly...
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| Autor*in: |
Londhe, Priyanka U. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 25(2014), 10 vom: 02. Aug., Seite 4643-4649 |
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| Übergeordnetes Werk: |
volume:25 ; year:2014 ; number:10 ; day:02 ; month:08 ; pages:4643-4649 |
| Links: |
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| DOI / URN: |
10.1007/s10854-014-2217-3 |
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| Katalog-ID: |
OLC2026279772 |
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| 520 | |a Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. | ||
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10.1007/s10854-014-2217-3 doi (DE-627)OLC2026279772 (DE-He213)s10854-014-2217-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film Rohom, Ashwini B. aut Chaure, Nandu B. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 10 02 08 4643-4649 |
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10.1007/s10854-014-2217-3 doi (DE-627)OLC2026279772 (DE-He213)s10854-014-2217-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film Rohom, Ashwini B. aut Chaure, Nandu B. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 10 02 08 4643-4649 |
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10.1007/s10854-014-2217-3 doi (DE-627)OLC2026279772 (DE-He213)s10854-014-2217-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film Rohom, Ashwini B. aut Chaure, Nandu B. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 10 02 08 4643-4649 |
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10.1007/s10854-014-2217-3 doi (DE-627)OLC2026279772 (DE-He213)s10854-014-2217-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film Rohom, Ashwini B. aut Chaure, Nandu B. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 10 02 08 4643-4649 |
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10.1007/s10854-014-2217-3 doi (DE-627)OLC2026279772 (DE-He213)s10854-014-2217-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film Rohom, Ashwini B. aut Chaure, Nandu B. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 10 02 08 4643-4649 |
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selenization of electrodeposited copper–indium alloy thin films for solar cell applications |
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Selenization of electrodeposited copper–indium alloy thin films for solar cell applications |
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Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. © Springer Science+Business Media New York 2014 |
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Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. © Springer Science+Business Media New York 2014 |
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Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} $$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. © Springer Science+Business Media New York 2014 |
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