Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy

Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substi...
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Autor*in:	Wang, Shuchang [verfasserIn] Zhang, Xiong Liu, Muchi Wang, Bowei Feng, Zhe Chuan Cui, Yiping

Format:	Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System

Anmerkung:	© Springer Science+Business Media New York 2014

Übergeordnetes Werk:	Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 25(2014), 11 vom: 13. Aug., Seite 4800-4805
Übergeordnetes Werk:	volume:25 ; year:2014 ; number:11 ; day:13 ; month:08 ; pages:4800-4805

Links:	Volltext

DOI / URN:	10.1007/s10854-014-2236-0

Katalog-ID:	OLC202628069X

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520			\|a Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition.
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allfields	10.1007/s10854-014-2236-0 doi (DE-627)OLC202628069X (DE-He213)s10854-014-2236-0-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Wang, Shuchang verfasserin aut Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System Zhang, Xiong aut Liu, Muchi aut Wang, Bowei aut Feng, Zhe Chuan aut Cui, Yiping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 11 vom: 13. Aug., Seite 4800-4805 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:11 day:13 month:08 pages:4800-4805 https://doi.org/10.1007/s10854-014-2236-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 11 13 08 4800-4805
spelling	10.1007/s10854-014-2236-0 doi (DE-627)OLC202628069X (DE-He213)s10854-014-2236-0-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Wang, Shuchang verfasserin aut Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System Zhang, Xiong aut Liu, Muchi aut Wang, Bowei aut Feng, Zhe Chuan aut Cui, Yiping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 11 vom: 13. Aug., Seite 4800-4805 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:11 day:13 month:08 pages:4800-4805 https://doi.org/10.1007/s10854-014-2236-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 11 13 08 4800-4805
allfields_unstemmed	10.1007/s10854-014-2236-0 doi (DE-627)OLC202628069X (DE-He213)s10854-014-2236-0-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Wang, Shuchang verfasserin aut Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System Zhang, Xiong aut Liu, Muchi aut Wang, Bowei aut Feng, Zhe Chuan aut Cui, Yiping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 11 vom: 13. Aug., Seite 4800-4805 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:11 day:13 month:08 pages:4800-4805 https://doi.org/10.1007/s10854-014-2236-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 11 13 08 4800-4805
allfieldsGer	10.1007/s10854-014-2236-0 doi (DE-627)OLC202628069X (DE-He213)s10854-014-2236-0-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Wang, Shuchang verfasserin aut Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System Zhang, Xiong aut Liu, Muchi aut Wang, Bowei aut Feng, Zhe Chuan aut Cui, Yiping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 11 vom: 13. Aug., Seite 4800-4805 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:11 day:13 month:08 pages:4800-4805 https://doi.org/10.1007/s10854-014-2236-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 11 13 08 4800-4805
allfieldsSound	10.1007/s10854-014-2236-0 doi (DE-627)OLC202628069X (DE-He213)s10854-014-2236-0-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Wang, Shuchang verfasserin aut Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System Zhang, Xiong aut Liu, Muchi aut Wang, Bowei aut Feng, Zhe Chuan aut Cui, Yiping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 25(2014), 11 vom: 13. Aug., Seite 4800-4805 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:25 year:2014 number:11 day:13 month:08 pages:4800-4805 https://doi.org/10.1007/s10854-014-2236-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 25 2014 11 13 08 4800-4805
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author	Wang, Shuchang
spellingShingle	Wang, Shuchang ddc 600 misc Metal Organic Chemical Vapor Deposition misc Local Electronic Structure misc Atomic Bond Length misc National Synchrotron Radiation Research Center misc Metal Organic Chemical Vapor Deposition System Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy
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topic_title	600 670 620 VZ Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy Metal Organic Chemical Vapor Deposition Local Electronic Structure Atomic Bond Length National Synchrotron Radiation Research Center Metal Organic Chemical Vapor Deposition System
topic	ddc 600 misc Metal Organic Chemical Vapor Deposition misc Local Electronic Structure misc Atomic Bond Length misc National Synchrotron Radiation Research Center misc Metal Organic Chemical Vapor Deposition System
topic_unstemmed	ddc 600 misc Metal Organic Chemical Vapor Deposition misc Local Electronic Structure misc Atomic Bond Length misc National Synchrotron Radiation Research Center misc Metal Organic Chemical Vapor Deposition System
topic_browse	ddc 600 misc Metal Organic Chemical Vapor Deposition misc Local Electronic Structure misc Atomic Bond Length misc National Synchrotron Radiation Research Center misc Metal Organic Chemical Vapor Deposition System
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title	Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy
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title_full	Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy
author_sort	Wang, Shuchang
journal	Journal of materials science / Materials in electronics
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author_browse	Wang, Shuchang Zhang, Xiong Liu, Muchi Wang, Bowei Feng, Zhe Chuan Cui, Yiping
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class	600 670 620 VZ
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author-letter	Wang, Shuchang
doi_str_mv	10.1007/s10854-014-2236-0
dewey-full	600 670 620
title_sort	study of lattice deformation and atomic bond length for $ al_{x} $$ ga_{1−x} $n epi-layers with synchrotron radiation x-ray absorption spectroscopy
title_auth	Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy
abstract	Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. © Springer Science+Business Media New York 2014
abstractGer	Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. © Springer Science+Business Media New York 2014
abstract_unstemmed	Abstract The lattice deformation in wurtzite $ Al_{x} $$ Ga_{1−x} $N epi-layers (0.19 ≤ x ≤ 0.58) grown on sapphire substrates by metal organic chemical vapor deposition has been studied with synchrotron radiation X-ray absorption spectroscopy and X-ray diffraction. The result reveals that Al substitution for Ga in AlGaN epi-layers induces a significant contraction in crystal lattice and c/a ratio (c and a are the lattice constants for AlGaN epi-layer, respectively), while the substitution only results in a slight expansion in internal parameter u, which is used to describe the lattice deformation of wurtzite structure. This fact suggests that u is not sensitive to Al substitution for Ga. A detailed analysis of extended X-ray absorption fine structure of Ga K-edge spectra show that the Ga–N bond length has only a weak composition dependence, while the Ga–Ga (Al) bond lengths are strongly dependent on the Al composition. © Springer Science+Business Media New York 2014
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container_issue	11
title_short	Study of lattice deformation and atomic bond length for $ Al_{x} $$ Ga_{1−x} $N epi-layers with synchrotron radiation X-ray absorption spectroscopy
url	https://doi.org/10.1007/s10854-014-2236-0
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author2	Zhang, Xiong Liu, Muchi Wang, Bowei Feng, Zhe Chuan Cui, Yiping
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doi_str	10.1007/s10854-014-2236-0
up_date	2024-07-04T03:34:11.971Z
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