Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM,...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ganaie, Mohsin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 26(2015), 7 vom: 07. Mai, Seite 4816-4822 |
|---|---|
| Übergeordnetes Werk: |
volume:26 ; year:2015 ; number:7 ; day:07 ; month:05 ; pages:4816-4822 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10854-015-3148-3 |
|---|
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OLC202628797X |
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| 520 | |a Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. | ||
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10.1007/s10854-015-3148-3 doi (DE-627)OLC202628797X (DE-He213)s10854-015-3148-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique Zulfequar, M. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 26 2015 7 07 05 4816-4822 |
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10.1007/s10854-015-3148-3 doi (DE-627)OLC202628797X (DE-He213)s10854-015-3148-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique Zulfequar, M. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 26 2015 7 07 05 4816-4822 |
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10.1007/s10854-015-3148-3 doi (DE-627)OLC202628797X (DE-He213)s10854-015-3148-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique Zulfequar, M. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 26 2015 7 07 05 4816-4822 |
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10.1007/s10854-015-3148-3 doi (DE-627)OLC202628797X (DE-He213)s10854-015-3148-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique Zulfequar, M. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 26 2015 7 07 05 4816-4822 |
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Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films |
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(DE-627)OLC202628797X (DE-He213)s10854-015-3148-3-p |
| title_full |
Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films |
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Ganaie, Mohsin |
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Journal of materials science / Materials in electronics |
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Journal of materials science / Materials in electronics |
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eng |
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600 - Technology |
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2015 |
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txt |
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4816 |
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Ganaie, Mohsin Zulfequar, M. |
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26 |
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600 670 620 VZ |
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Aufsätze |
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Ganaie, Mohsin |
| doi_str_mv |
10.1007/s10854-015-3148-3 |
| dewey-full |
600 670 620 |
| title_sort |
structural and optical investigation of $ cd_{4} $$ se_{96−x} $$ s_{x} $ (x = 4, 8, 12) chalcogenide thin films |
| title_auth |
Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films |
| abstract |
Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. © Springer Science+Business Media New York 2015 |
| abstractGer |
Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. © Springer Science+Business Media New York 2015 |
| abstract_unstemmed |
Abstract $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. © Springer Science+Business Media New York 2015 |
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| container_issue |
7 |
| title_short |
Structural and optical investigation of $ Cd_{4} $$ Se_{96−x} $$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films |
| url |
https://doi.org/10.1007/s10854-015-3148-3 |
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