Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics
Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ni, Lei [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 27(2015), 1 vom: 07. Sept., Seite 111-117 |
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| Übergeordnetes Werk: |
volume:27 ; year:2015 ; number:1 ; day:07 ; month:09 ; pages:111-117 |
| Links: |
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| DOI / URN: |
10.1007/s10854-015-3725-5 |
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| Katalog-ID: |
OLC2026296383 |
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| 520 | |a Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. | ||
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| 700 | 1 | |a Zhao, Shigong |4 aut | |
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10.1007/s10854-015-3725-5 doi (DE-627)OLC2026296383 (DE-He213)s10854-015-3725-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Lei verfasserin (orcid)0000-0003-3669-6831 aut Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. Dielectric Constant Dielectric Loss Dielectric Relaxation High Temperature Range Debye Relaxation Fu, Maosen aut Liu, Ying aut Tang, Tianyi aut Wang, Shuo aut Zou, Bin aut Zhao, Shigong aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 1 vom: 07. Sept., Seite 111-117 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:1 day:07 month:09 pages:111-117 https://doi.org/10.1007/s10854-015-3725-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 1 07 09 111-117 |
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10.1007/s10854-015-3725-5 doi (DE-627)OLC2026296383 (DE-He213)s10854-015-3725-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Lei verfasserin (orcid)0000-0003-3669-6831 aut Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. Dielectric Constant Dielectric Loss Dielectric Relaxation High Temperature Range Debye Relaxation Fu, Maosen aut Liu, Ying aut Tang, Tianyi aut Wang, Shuo aut Zou, Bin aut Zhao, Shigong aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 1 vom: 07. Sept., Seite 111-117 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:1 day:07 month:09 pages:111-117 https://doi.org/10.1007/s10854-015-3725-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 1 07 09 111-117 |
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10.1007/s10854-015-3725-5 doi (DE-627)OLC2026296383 (DE-He213)s10854-015-3725-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Lei verfasserin (orcid)0000-0003-3669-6831 aut Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. Dielectric Constant Dielectric Loss Dielectric Relaxation High Temperature Range Debye Relaxation Fu, Maosen aut Liu, Ying aut Tang, Tianyi aut Wang, Shuo aut Zou, Bin aut Zhao, Shigong aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 1 vom: 07. Sept., Seite 111-117 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:1 day:07 month:09 pages:111-117 https://doi.org/10.1007/s10854-015-3725-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 1 07 09 111-117 |
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10.1007/s10854-015-3725-5 doi (DE-627)OLC2026296383 (DE-He213)s10854-015-3725-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Lei verfasserin (orcid)0000-0003-3669-6831 aut Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. Dielectric Constant Dielectric Loss Dielectric Relaxation High Temperature Range Debye Relaxation Fu, Maosen aut Liu, Ying aut Tang, Tianyi aut Wang, Shuo aut Zou, Bin aut Zhao, Shigong aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 1 vom: 07. Sept., Seite 111-117 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:1 day:07 month:09 pages:111-117 https://doi.org/10.1007/s10854-015-3725-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 1 07 09 111-117 |
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10.1007/s10854-015-3725-5 doi (DE-627)OLC2026296383 (DE-He213)s10854-015-3725-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Lei verfasserin (orcid)0000-0003-3669-6831 aut Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. Dielectric Constant Dielectric Loss Dielectric Relaxation High Temperature Range Debye Relaxation Fu, Maosen aut Liu, Ying aut Tang, Tianyi aut Wang, Shuo aut Zou, Bin aut Zhao, Shigong aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 1 vom: 07. Sept., Seite 111-117 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:1 day:07 month:09 pages:111-117 https://doi.org/10.1007/s10854-015-3725-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 1 07 09 111-117 |
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Enthalten in Journal of materials science / Materials in electronics 27(2015), 1 vom: 07. Sept., Seite 111-117 volume:27 year:2015 number:1 day:07 month:09 pages:111-117 |
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giant dielectric response in $ dy_{2/3} $$ cu_{3} $$ ti_{4} $$ o_{12} $ ceramics |
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Giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics |
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Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. © Springer Science+Business Media New York 2015 |
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Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. © Springer Science+Business Media New York 2015 |
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Abstract $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics were successfully synthesized by solid-state reaction process, and the crystal structure, microstructure and dielectric properties were systematically investigated. It has been found that $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics exhibit giant dielectric constants (ε′ ~ $ 10^{4} $ at 1 kHz and room temperature) and have two thermal-activated dielectric relaxations at low and high temperatures, which are quite similar to those reported in $ CaCu_{3} $$ Ti_{4} $$ O_{12} $ ceramics. The low-temperature dielectric relaxation with the activation energy of 0.092 eV is supposed to be the intrinsic response originated from the defect structures of oxygen vacancy and aliovalences of Ti and Cu ions, which might make the grains semiconductive. Moreover, the heterogeneous structures especially the grain boundaries should be responsible for the high-temperature dielectric relaxation with the activation energy of 0.585 eV. The semiconducting grains and insulating grain boundaries thus play the key role as extrinsic origin for the giant dielectric response in $ Dy_{2/3} $$ Cu_{3} $$ Ti_{4} $$ O_{12} $ ceramics according to the internal barrier layer capacitor (IBLC) mechanism. © Springer Science+Business Media New York 2015 |
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