$ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells
Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized fo...
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Gespeichert in:
| Autor*in: |
Nikam, S. S. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 27(2015), 2 vom: 11. Nov., Seite 1897-1900 |
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| Übergeordnetes Werk: |
volume:27 ; year:2015 ; number:2 ; day:11 ; month:11 ; pages:1897-1900 |
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| DOI / URN: |
10.1007/s10854-015-3970-7 |
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OLC2026296715 |
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| 520 | |a Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. | ||
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| 700 | 1 | |a Shinde, P. A. |4 aut | |
| 700 | 1 | |a Moholkar, A. V. |4 aut | |
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10.1007/s10854-015-3970-7 doi (DE-627)OLC2026296715 (DE-He213)s10854-015-3970-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nikam, S. S. verfasserin aut $ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. Cu2O Na2S2O3 Cuprous Oxide Cu2O Film SILAR Method Suryawanshi, M. P. aut Bhosale, S. M. aut Gaikwad, M. A. aut Shinde, P. A. aut Moholkar, A. V. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 2 vom: 11. Nov., Seite 1897-1900 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:2 day:11 month:11 pages:1897-1900 https://doi.org/10.1007/s10854-015-3970-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 2 11 11 1897-1900 |
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10.1007/s10854-015-3970-7 doi (DE-627)OLC2026296715 (DE-He213)s10854-015-3970-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nikam, S. S. verfasserin aut $ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. Cu2O Na2S2O3 Cuprous Oxide Cu2O Film SILAR Method Suryawanshi, M. P. aut Bhosale, S. M. aut Gaikwad, M. A. aut Shinde, P. A. aut Moholkar, A. V. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 2 vom: 11. Nov., Seite 1897-1900 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:2 day:11 month:11 pages:1897-1900 https://doi.org/10.1007/s10854-015-3970-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 2 11 11 1897-1900 |
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10.1007/s10854-015-3970-7 doi (DE-627)OLC2026296715 (DE-He213)s10854-015-3970-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nikam, S. S. verfasserin aut $ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. Cu2O Na2S2O3 Cuprous Oxide Cu2O Film SILAR Method Suryawanshi, M. P. aut Bhosale, S. M. aut Gaikwad, M. A. aut Shinde, P. A. aut Moholkar, A. V. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 2 vom: 11. Nov., Seite 1897-1900 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:2 day:11 month:11 pages:1897-1900 https://doi.org/10.1007/s10854-015-3970-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 2 11 11 1897-1900 |
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10.1007/s10854-015-3970-7 doi (DE-627)OLC2026296715 (DE-He213)s10854-015-3970-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nikam, S. S. verfasserin aut $ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. Cu2O Na2S2O3 Cuprous Oxide Cu2O Film SILAR Method Suryawanshi, M. P. aut Bhosale, S. M. aut Gaikwad, M. A. aut Shinde, P. A. aut Moholkar, A. V. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 2 vom: 11. Nov., Seite 1897-1900 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:2 day:11 month:11 pages:1897-1900 https://doi.org/10.1007/s10854-015-3970-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 2 11 11 1897-1900 |
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10.1007/s10854-015-3970-7 doi (DE-627)OLC2026296715 (DE-He213)s10854-015-3970-7-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Nikam, S. S. verfasserin aut $ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. Cu2O Na2S2O3 Cuprous Oxide Cu2O Film SILAR Method Suryawanshi, M. P. aut Bhosale, S. M. aut Gaikwad, M. A. aut Shinde, P. A. aut Moholkar, A. V. aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 2 vom: 11. Nov., Seite 1897-1900 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:2 day:11 month:11 pages:1897-1900 https://doi.org/10.1007/s10854-015-3970-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 2 11 11 1897-1900 |
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Nikam, S. S. Suryawanshi, M. P. Bhosale, S. M. Gaikwad, M. A. Shinde, P. A. Moholkar, A. V. |
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Nikam, S. S. |
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10.1007/s10854-015-3970-7 |
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600 670 620 |
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$ cu_{2} $o thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells |
| title_auth |
$ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells |
| abstract |
Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. © Springer Science+Business Media New York 2015 |
| abstractGer |
Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. © Springer Science+Business Media New York 2015 |
| abstract_unstemmed |
Abstract Nanocrystalline cubic $ Cu_{2} $O thin films are developed by simple and cost-effective modified successive ionic layer adsorption and reaction method. This method increases the growth rate and reduces the overall deposition time. The synthesized $ Cu_{2} $O thin films were characterized for their different physico-chemical properties. The film deposited for 25 cycles exhibits optical band gap energy of 2.16 eV, phase pure cubic $ Cu_{2} $O structure, foggy like surface morphology and hydrophobic in nature. The photoelectrochemical device fabricated using $ Cu_{2} $O thin film showed an efficiency of 0.35 %. © Springer Science+Business Media New York 2015 |
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$ Cu_{2} $O thin films prepared using modified successive ionic layer adsorption and reaction method and their use in photoelectrochemical solar cells |
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