Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk
Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sun, Bai [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 27(2015), 4 vom: 28. Dez., Seite 3957-3962 |
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| Übergeordnetes Werk: |
volume:27 ; year:2015 ; number:4 ; day:28 ; month:12 ; pages:3957-3962 |
| Links: |
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| DOI / URN: |
10.1007/s10854-015-4248-9 |
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| Katalog-ID: |
OLC2026299390 |
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| 520 | |a Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. | ||
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10.1007/s10854-015-4248-9 doi (DE-627)OLC2026299390 (DE-He213)s10854-015-4248-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Sun, Bai verfasserin aut Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. Resistive Switching High Resistance State Spider Silk Memory Window Resistive Switching Behavior Liang, Dandan aut Li, Xiaoping aut Chen, Peng aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 4 vom: 28. Dez., Seite 3957-3962 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:4 day:28 month:12 pages:3957-3962 https://doi.org/10.1007/s10854-015-4248-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 4 28 12 3957-3962 |
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10.1007/s10854-015-4248-9 doi (DE-627)OLC2026299390 (DE-He213)s10854-015-4248-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Sun, Bai verfasserin aut Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. Resistive Switching High Resistance State Spider Silk Memory Window Resistive Switching Behavior Liang, Dandan aut Li, Xiaoping aut Chen, Peng aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 4 vom: 28. Dez., Seite 3957-3962 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:4 day:28 month:12 pages:3957-3962 https://doi.org/10.1007/s10854-015-4248-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 4 28 12 3957-3962 |
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10.1007/s10854-015-4248-9 doi (DE-627)OLC2026299390 (DE-He213)s10854-015-4248-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Sun, Bai verfasserin aut Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. Resistive Switching High Resistance State Spider Silk Memory Window Resistive Switching Behavior Liang, Dandan aut Li, Xiaoping aut Chen, Peng aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 4 vom: 28. Dez., Seite 3957-3962 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:4 day:28 month:12 pages:3957-3962 https://doi.org/10.1007/s10854-015-4248-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 4 28 12 3957-3962 |
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10.1007/s10854-015-4248-9 doi (DE-627)OLC2026299390 (DE-He213)s10854-015-4248-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Sun, Bai verfasserin aut Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. Resistive Switching High Resistance State Spider Silk Memory Window Resistive Switching Behavior Liang, Dandan aut Li, Xiaoping aut Chen, Peng aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 4 vom: 28. Dez., Seite 3957-3962 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:4 day:28 month:12 pages:3957-3962 https://doi.org/10.1007/s10854-015-4248-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 4 28 12 3957-3962 |
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10.1007/s10854-015-4248-9 doi (DE-627)OLC2026299390 (DE-He213)s10854-015-4248-9-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Sun, Bai verfasserin aut Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. Resistive Switching High Resistance State Spider Silk Memory Window Resistive Switching Behavior Liang, Dandan aut Li, Xiaoping aut Chen, Peng aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2015), 4 vom: 28. Dez., Seite 3957-3962 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2015 number:4 day:28 month:12 pages:3957-3962 https://doi.org/10.1007/s10854-015-4248-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2015 4 28 12 3957-3962 |
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Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. © Springer Science+Business Media New York 2015 |
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Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. © Springer Science+Business Media New York 2015 |
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Abstract The employ of nontoxic biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and environmentally friendly electronics. Herein the fabrication and characterization of natural biomaterials-based bio-memristors with Ag/Fibroin/Au/Si structure is demonstrated. We observed a significant bipolar resistive switching behavior in Ag/Fibroin/Au/Si structure at room temperature. The results suggested that the memory behavior originates from the formation and rupture of conductive filaments. This work reveals that fibroin from spider silk is a useful natural biomaterial for nonvolatile memory applications, suggesting that spider silk possesses the potential for sustainable electronics and data storage. © Springer Science+Business Media New York 2015 |
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Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk |
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https://doi.org/10.1007/s10854-015-4248-9 |
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Liang, Dandan Li, Xiaoping Chen, Peng |
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10.1007/s10854-015-4248-9 |
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2024-07-04T03:37:15.176Z |
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