Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer
Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ni, Yiqiang [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 27(2016), 5 vom: 13. Feb., Seite 5158-5163 |
|---|---|
| Übergeordnetes Werk: |
volume:27 ; year:2016 ; number:5 ; day:13 ; month:02 ; pages:5158-5163 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10854-016-4408-6 |
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| Katalog-ID: |
OLC2026302243 |
|---|
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| 520 | |a Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. | ||
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| 700 | 1 | |a Zhang, Baijun |4 aut | |
| 700 | 1 | |a Liu, Yang |4 aut | |
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10.1007/s10854-016-4408-6 doi (DE-627)OLC2026302243 (DE-He213)s10854-016-4408-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Yiqiang verfasserin aut Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer He, Liang aut Zhou, Deqiu aut He, Zhiyuan aut Chen, Zijun aut Zheng, Yue aut Yang, Fan aut Shen, Zhen aut Zhang, Xiaorong aut He, Lei aut Wu, Zhisheng aut Zhang, Baijun aut Liu, Yang aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2016), 5 vom: 13. Feb., Seite 5158-5163 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 https://doi.org/10.1007/s10854-016-4408-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2016 5 13 02 5158-5163 |
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10.1007/s10854-016-4408-6 doi (DE-627)OLC2026302243 (DE-He213)s10854-016-4408-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Yiqiang verfasserin aut Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer He, Liang aut Zhou, Deqiu aut He, Zhiyuan aut Chen, Zijun aut Zheng, Yue aut Yang, Fan aut Shen, Zhen aut Zhang, Xiaorong aut He, Lei aut Wu, Zhisheng aut Zhang, Baijun aut Liu, Yang aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2016), 5 vom: 13. Feb., Seite 5158-5163 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 https://doi.org/10.1007/s10854-016-4408-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2016 5 13 02 5158-5163 |
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10.1007/s10854-016-4408-6 doi (DE-627)OLC2026302243 (DE-He213)s10854-016-4408-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Yiqiang verfasserin aut Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer He, Liang aut Zhou, Deqiu aut He, Zhiyuan aut Chen, Zijun aut Zheng, Yue aut Yang, Fan aut Shen, Zhen aut Zhang, Xiaorong aut He, Lei aut Wu, Zhisheng aut Zhang, Baijun aut Liu, Yang aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2016), 5 vom: 13. Feb., Seite 5158-5163 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 https://doi.org/10.1007/s10854-016-4408-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2016 5 13 02 5158-5163 |
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10.1007/s10854-016-4408-6 doi (DE-627)OLC2026302243 (DE-He213)s10854-016-4408-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Yiqiang verfasserin aut Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer He, Liang aut Zhou, Deqiu aut He, Zhiyuan aut Chen, Zijun aut Zheng, Yue aut Yang, Fan aut Shen, Zhen aut Zhang, Xiaorong aut He, Lei aut Wu, Zhisheng aut Zhang, Baijun aut Liu, Yang aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2016), 5 vom: 13. Feb., Seite 5158-5163 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 https://doi.org/10.1007/s10854-016-4408-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2016 5 13 02 5158-5163 |
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10.1007/s10854-016-4408-6 doi (DE-627)OLC2026302243 (DE-He213)s10854-016-4408-6-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Ni, Yiqiang verfasserin aut Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer He, Liang aut Zhou, Deqiu aut He, Zhiyuan aut Chen, Zijun aut Zheng, Yue aut Yang, Fan aut Shen, Zhen aut Zhang, Xiaorong aut He, Lei aut Wu, Zhisheng aut Zhang, Baijun aut Liu, Yang aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 27(2016), 5 vom: 13. Feb., Seite 5158-5163 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 https://doi.org/10.1007/s10854-016-4408-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 27 2016 5 13 02 5158-5163 |
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Enthalten in Journal of materials science / Materials in electronics 27(2016), 5 vom: 13. Feb., Seite 5158-5163 volume:27 year:2016 number:5 day:13 month:02 pages:5158-5163 |
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Ni, Yiqiang |
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Ni, Yiqiang ddc 600 misc Buffer Layer misc Leakage Current misc Breakdown Voltage misc Thick Buffer Layer misc AlGaN Buffer Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer |
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600 670 620 VZ Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer Buffer Layer Leakage Current Breakdown Voltage Thick Buffer Layer AlGaN Buffer |
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Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer |
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Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer |
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Ni, Yiqiang |
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Ni, Yiqiang He, Liang Zhou, Deqiu He, Zhiyuan Chen, Zijun Zheng, Yue Yang, Fan Shen, Zhen Zhang, Xiaorong He, Lei Wu, Zhisheng Zhang, Baijun Liu, Yang |
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low-leakage current and high-breakdown voltage gan-on-si (111) system with an algan impurity blocking layer |
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Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer |
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Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. © Springer Science+Business Media New York 2016 |
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Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. © Springer Science+Business Media New York 2016 |
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Abstract The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased. © Springer Science+Business Media New York 2016 |
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Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer |
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He, Liang Zhou, Deqiu He, Zhiyuan Chen, Zijun Zheng, Yue Yang, Fan Shen, Zhen Zhang, Xiaorong He, Lei Wu, Zhisheng Zhang, Baijun Liu, Yang |
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