Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates
Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and...
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| Autor*in: |
Gong, Li [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2017 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 28(2017), 8 vom: 06. Jan., Seite 6093-6098 |
|---|---|
| Übergeordnetes Werk: |
volume:28 ; year:2017 ; number:8 ; day:06 ; month:01 ; pages:6093-6098 |
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| DOI / URN: |
10.1007/s10854-016-6286-3 |
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OLC2026320705 |
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| 520 | |a Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. | ||
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10.1007/s10854-016-6286-3 doi (DE-627)OLC2026320705 (DE-He213)s10854-016-6286-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Gong, Li verfasserin aut Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. Residual Stress Transparent Conductive Film Chemical Spray Pyrolysis Transparent Conductive Oxide Material Transparent Conductive Oxide Thin Film Liu, Yun-Zhen aut Liu, Fang-Yang aut Jiang, Liang-Xing aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 8 vom: 06. Jan., Seite 6093-6098 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:8 day:06 month:01 pages:6093-6098 https://doi.org/10.1007/s10854-016-6286-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 8 06 01 6093-6098 |
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10.1007/s10854-016-6286-3 doi (DE-627)OLC2026320705 (DE-He213)s10854-016-6286-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Gong, Li verfasserin aut Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. Residual Stress Transparent Conductive Film Chemical Spray Pyrolysis Transparent Conductive Oxide Material Transparent Conductive Oxide Thin Film Liu, Yun-Zhen aut Liu, Fang-Yang aut Jiang, Liang-Xing aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 8 vom: 06. Jan., Seite 6093-6098 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:8 day:06 month:01 pages:6093-6098 https://doi.org/10.1007/s10854-016-6286-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 8 06 01 6093-6098 |
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10.1007/s10854-016-6286-3 doi (DE-627)OLC2026320705 (DE-He213)s10854-016-6286-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Gong, Li verfasserin aut Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. Residual Stress Transparent Conductive Film Chemical Spray Pyrolysis Transparent Conductive Oxide Material Transparent Conductive Oxide Thin Film Liu, Yun-Zhen aut Liu, Fang-Yang aut Jiang, Liang-Xing aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 8 vom: 06. Jan., Seite 6093-6098 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:8 day:06 month:01 pages:6093-6098 https://doi.org/10.1007/s10854-016-6286-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 8 06 01 6093-6098 |
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10.1007/s10854-016-6286-3 doi (DE-627)OLC2026320705 (DE-He213)s10854-016-6286-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Gong, Li verfasserin aut Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. Residual Stress Transparent Conductive Film Chemical Spray Pyrolysis Transparent Conductive Oxide Material Transparent Conductive Oxide Thin Film Liu, Yun-Zhen aut Liu, Fang-Yang aut Jiang, Liang-Xing aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 8 vom: 06. Jan., Seite 6093-6098 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:8 day:06 month:01 pages:6093-6098 https://doi.org/10.1007/s10854-016-6286-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 8 06 01 6093-6098 |
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10.1007/s10854-016-6286-3 doi (DE-627)OLC2026320705 (DE-He213)s10854-016-6286-3-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Gong, Li verfasserin aut Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. Residual Stress Transparent Conductive Film Chemical Spray Pyrolysis Transparent Conductive Oxide Material Transparent Conductive Oxide Thin Film Liu, Yun-Zhen aut Liu, Fang-Yang aut Jiang, Liang-Xing aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 8 vom: 06. Jan., Seite 6093-6098 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:8 day:06 month:01 pages:6093-6098 https://doi.org/10.1007/s10854-016-6286-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 8 06 01 6093-6098 |
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Gong, Li Liu, Yun-Zhen Liu, Fang-Yang Jiang, Liang-Xing |
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room-temperature deposition of flexible transparent conductive ga-doped zno thin films by magnetron sputtering on polymer substrates |
| title_auth |
Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates |
| abstract |
Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. © Springer Science+Business Media New York 2017 |
| abstractGer |
Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. © Springer Science+Business Media New York 2017 |
| abstract_unstemmed |
Abstract Flexible Ga doped ZnO transparent conductive films were prepared on polymer substrates at room temperature by RF magnetron sputtering. The effect of the Ar flow rate is more important than that of r.f. power and sputtering pressure. The dependence of the structural, electrical, optical and adhesive properties of flexible Ga doped ZnO transparent conductive thin films on the Ar flow rate was investigated for the first time. When the Ar flow rate is 40 sccm, the residual stress is changed from compressive stress to tensile stress, indicating the crystallinity of the film is best. And the lowest square resistance of 7.9 Ω/sq. is obtained at the Ar flow rate of 40 sccm. Regardless of the Ar flow rate, the optical transmittance in the visible light of all the films is about 90%. The best adhesive behavior is obtained at the Ar flow rate of 40 sccm. © Springer Science+Business Media New York 2017 |
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| title_short |
Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates |
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