Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation
Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yang, Weimin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2017 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 28(2017), 17 vom: 15. Mai, Seite 12803-12815 |
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| Übergeordnetes Werk: |
volume:28 ; year:2017 ; number:17 ; day:15 ; month:05 ; pages:12803-12815 |
| Links: |
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| DOI / URN: |
10.1007/s10854-017-7108-y |
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| Katalog-ID: |
OLC2026328579 |
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| 245 | 1 | 0 | |a Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
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| 520 | |a Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. | ||
| 650 | 4 | |a Reaction Temperature | |
| 650 | 4 | |a Quantum Yield | |
| 650 | 4 | |a Emission Peak | |
| 650 | 4 | |a Ultrasonic Irradiation | |
| 650 | 4 | |a Photoluminescence Property | |
| 700 | 1 | |a Wang, Jue |4 aut | |
| 700 | 1 | |a Wang, Lixi |4 aut | |
| 700 | 1 | |a Zhang, Qitu |4 aut | |
| 700 | 1 | |a Wong, Chingping |4 aut | |
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10.1007/s10854-017-7108-y doi (DE-627)OLC2026328579 (DE-He213)s10854-017-7108-y-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yang, Weimin verfasserin aut Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property Wang, Jue aut Wang, Lixi aut Zhang, Qitu aut Wong, Chingping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 17 vom: 15. Mai, Seite 12803-12815 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:17 day:15 month:05 pages:12803-12815 https://doi.org/10.1007/s10854-017-7108-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 17 15 05 12803-12815 |
| spelling |
10.1007/s10854-017-7108-y doi (DE-627)OLC2026328579 (DE-He213)s10854-017-7108-y-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yang, Weimin verfasserin aut Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property Wang, Jue aut Wang, Lixi aut Zhang, Qitu aut Wong, Chingping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 17 vom: 15. Mai, Seite 12803-12815 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:17 day:15 month:05 pages:12803-12815 https://doi.org/10.1007/s10854-017-7108-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 17 15 05 12803-12815 |
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10.1007/s10854-017-7108-y doi (DE-627)OLC2026328579 (DE-He213)s10854-017-7108-y-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yang, Weimin verfasserin aut Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property Wang, Jue aut Wang, Lixi aut Zhang, Qitu aut Wong, Chingping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 17 vom: 15. Mai, Seite 12803-12815 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:17 day:15 month:05 pages:12803-12815 https://doi.org/10.1007/s10854-017-7108-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 17 15 05 12803-12815 |
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10.1007/s10854-017-7108-y doi (DE-627)OLC2026328579 (DE-He213)s10854-017-7108-y-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yang, Weimin verfasserin aut Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property Wang, Jue aut Wang, Lixi aut Zhang, Qitu aut Wong, Chingping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 17 vom: 15. Mai, Seite 12803-12815 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:17 day:15 month:05 pages:12803-12815 https://doi.org/10.1007/s10854-017-7108-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 17 15 05 12803-12815 |
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10.1007/s10854-017-7108-y doi (DE-627)OLC2026328579 (DE-He213)s10854-017-7108-y-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yang, Weimin verfasserin aut Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2017 Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property Wang, Jue aut Wang, Lixi aut Zhang, Qitu aut Wong, Chingping aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 28(2017), 17 vom: 15. Mai, Seite 12803-12815 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:28 year:2017 number:17 day:15 month:05 pages:12803-12815 https://doi.org/10.1007/s10854-017-7108-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 GBV_ILN_4046 GBV_ILN_4323 AR 28 2017 17 15 05 12803-12815 |
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Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. 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Yang, Weimin |
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Yang, Weimin ddc 600 misc Reaction Temperature misc Quantum Yield misc Emission Peak misc Ultrasonic Irradiation misc Photoluminescence Property Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
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600 670 620 VZ Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation Reaction Temperature Quantum Yield Emission Peak Ultrasonic Irradiation Photoluminescence Property |
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Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
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Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
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Yang, Weimin |
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Journal of materials science / Materials in electronics |
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Yang, Weimin Wang, Jue Wang, Lixi Zhang, Qitu Wong, Chingping |
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10.1007/s10854-017-7108-y |
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600 670 620 |
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effect of reaction temperature and reaction time on the sizes and defects of sn doped zno quantum dots synthesized under ultrasonic irradiation |
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Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
| abstract |
Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. © Springer Science+Business Media New York 2017 |
| abstractGer |
Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. © Springer Science+Business Media New York 2017 |
| abstract_unstemmed |
Abstract Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were synthesized via an ultrasonic method under different reaction time and reaction temperature. Optical defects of these $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots were controlled by tuning the valence states of the dopants ($ Sn^{2+} $ or $ Sn^{4+} $). For $ Sn^{2+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${V}_{{O}}^{ \cdot }$$ defects. While for $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, main optical defects were $${{O}_{Zn}}$$ and $${{O}_i}$$ defects. UV–Vis spectra were employed to investigate the energy gap of these quantum dots. Photoluminescence properties were measured to discuss the optical defect types and concentrations in these quantum dots. It was found that the reaction condition played an important role in controlling the particle sizes and optical defects of $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots. Moreover, with reaction temperature or reaction time increasing, for both $ Sn^{2+} $ and $ Sn^{4+} $ doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots, changing trends of their particle sizes were almost same. While changing trends of their optical defect types and concentrations were different. The results indicate that, oxygen in Sn doped $ Zn_{0.95} $$ Sn_{0.05} $O quantum dots died out much more completely under the ultrasonic reaction with higher reaction temperature and longer reaction time. © Springer Science+Business Media New York 2017 |
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Effect of reaction temperature and reaction time on the sizes and defects of Sn doped ZnO quantum dots synthesized under ultrasonic irradiation |
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