Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process
Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries,...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhao, Xuewei [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 30(2019), 6 vom: 19. Feb., Seite 5845-5853 |
|---|---|
| Übergeordnetes Werk: |
volume:30 ; year:2019 ; number:6 ; day:19 ; month:02 ; pages:5845-5853 |
| Links: |
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| DOI / URN: |
10.1007/s10854-019-00882-4 |
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OLC202636589X |
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| 520 | |a Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. | ||
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10.1007/s10854-019-00882-4 doi (DE-627)OLC202636589X (DE-He213)s10854-019-00882-4-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhao, Xuewei verfasserin aut Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 6 vom: 19. Feb., Seite 5845-5853 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:6 day:19 month:02 pages:5845-5853 https://doi.org/10.1007/s10854-019-00882-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 6 19 02 5845-5853 |
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10.1007/s10854-019-00882-4 doi (DE-627)OLC202636589X (DE-He213)s10854-019-00882-4-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhao, Xuewei verfasserin aut Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 6 vom: 19. Feb., Seite 5845-5853 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:6 day:19 month:02 pages:5845-5853 https://doi.org/10.1007/s10854-019-00882-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 6 19 02 5845-5853 |
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10.1007/s10854-019-00882-4 doi (DE-627)OLC202636589X (DE-He213)s10854-019-00882-4-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhao, Xuewei verfasserin aut Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 6 vom: 19. Feb., Seite 5845-5853 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:6 day:19 month:02 pages:5845-5853 https://doi.org/10.1007/s10854-019-00882-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 6 19 02 5845-5853 |
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10.1007/s10854-019-00882-4 doi (DE-627)OLC202636589X (DE-He213)s10854-019-00882-4-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Zhao, Xuewei verfasserin aut Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 6 vom: 19. Feb., Seite 5845-5853 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:6 day:19 month:02 pages:5845-5853 https://doi.org/10.1007/s10854-019-00882-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 6 19 02 5845-5853 |
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Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). Stress induced voids were considered to be generated at twin boundaries because of the stress concentration induced by three possible factors: crystallographic orientation differences of Cu grains near the twin boundary, interface decohesion of twin boundary and morphology of twin boundary. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC202636589X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503131043.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-019-00882-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC202636589X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-019-00882-4-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhao, Xuewei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of twin boundaries on the void formation in Cu-filled through silicon vias under thermal process</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We reported on the study of the thermal mechanical reliability of Cu-filled through silicon via (TSV) under 450 °C thermal loading. It was found that the voids could be generated at twin boundaries in TSV-Cu after thermal process. To study the mechanism of void formation at twin boundaries, the voided regions were characterized by focused ion beam—scanning electron microscope (FIB-SEM), the crystallographic orientation of Cu grains and the microstructure of twin boundaries was analyzed by means of electron backscattered diffraction (EBSD) and transmission electron microscope (TEM). 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