Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal
Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in...
Ausführliche Beschreibung
Autor*in: |
Yao, Lu [verfasserIn] |
---|
Format: |
Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2019 |
---|
Anmerkung: |
© Springer Science+Business Media, LLC, part of Springer Nature 2019 |
---|
Übergeordnetes Werk: |
Enthalten in: Journal of materials science / Materials in electronics - Springer US, 1990, 30(2019), 8 vom: 18. März, Seite 7928-7939 |
---|---|
Übergeordnetes Werk: |
volume:30 ; year:2019 ; number:8 ; day:18 ; month:03 ; pages:7928-7939 |
Links: |
---|
DOI / URN: |
10.1007/s10854-019-01114-5 |
---|
Katalog-ID: |
OLC2026367752 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2026367752 | ||
003 | DE-627 | ||
005 | 20230503131059.0 | ||
007 | tu | ||
008 | 200820s2019 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/s10854-019-01114-5 |2 doi | |
035 | |a (DE-627)OLC2026367752 | ||
035 | |a (DE-He213)s10854-019-01114-5-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 600 |a 670 |a 620 |q VZ |
100 | 1 | |a Yao, Lu |e verfasserin |4 aut | |
245 | 1 | 0 | |a Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
264 | 1 | |c 2019 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Springer Science+Business Media, LLC, part of Springer Nature 2019 | ||
520 | |a Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. | ||
700 | 1 | |a Geng, Hongchao |4 aut | |
700 | 1 | |a Cheng, Runrun |4 aut | |
700 | 1 | |a Cao, Kesheng |4 aut | |
700 | 1 | |a Sheng, Pengtao |4 aut | |
700 | 1 | |a Li, Weili |0 (orcid)0000-0002-8387-6539 |4 aut | |
700 | 1 | |a Li, Songtian |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Journal of materials science / Materials in electronics |d Springer US, 1990 |g 30(2019), 8 vom: 18. März, Seite 7928-7939 |w (DE-627)130863289 |w (DE-600)1030929-9 |w (DE-576)023106719 |x 0957-4522 |7 nnns |
773 | 1 | 8 | |g volume:30 |g year:2019 |g number:8 |g day:18 |g month:03 |g pages:7928-7939 |
856 | 4 | 1 | |u https://doi.org/10.1007/s10854-019-01114-5 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-TEC | ||
912 | |a SSG-OLC-PHY | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2015 | ||
951 | |a AR | ||
952 | |d 30 |j 2019 |e 8 |b 18 |c 03 |h 7928-7939 |
author_variant |
l y ly h g hg r c rc k c kc p s ps w l wl s l sl |
---|---|
matchkey_str |
article:09574522:2019----::rprtoohbipoolcrdbsdneetornune2dsniiennpruzoaohes |
hierarchy_sort_str |
2019 |
publishDate |
2019 |
allfields |
10.1007/s10854-019-01114-5 doi (DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yao, Lu verfasserin aut Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. Geng, Hongchao aut Cheng, Runrun aut Cao, Kesheng aut Sheng, Pengtao aut Li, Weili (orcid)0000-0002-8387-6539 aut Li, Songtian aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 8 vom: 18. März, Seite 7928-7939 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 https://doi.org/10.1007/s10854-019-01114-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 8 18 03 7928-7939 |
spelling |
10.1007/s10854-019-01114-5 doi (DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yao, Lu verfasserin aut Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. Geng, Hongchao aut Cheng, Runrun aut Cao, Kesheng aut Sheng, Pengtao aut Li, Weili (orcid)0000-0002-8387-6539 aut Li, Songtian aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 8 vom: 18. März, Seite 7928-7939 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 https://doi.org/10.1007/s10854-019-01114-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 8 18 03 7928-7939 |
allfields_unstemmed |
10.1007/s10854-019-01114-5 doi (DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yao, Lu verfasserin aut Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. Geng, Hongchao aut Cheng, Runrun aut Cao, Kesheng aut Sheng, Pengtao aut Li, Weili (orcid)0000-0002-8387-6539 aut Li, Songtian aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 8 vom: 18. März, Seite 7928-7939 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 https://doi.org/10.1007/s10854-019-01114-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 8 18 03 7928-7939 |
allfieldsGer |
10.1007/s10854-019-01114-5 doi (DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yao, Lu verfasserin aut Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. Geng, Hongchao aut Cheng, Runrun aut Cao, Kesheng aut Sheng, Pengtao aut Li, Weili (orcid)0000-0002-8387-6539 aut Li, Songtian aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 8 vom: 18. März, Seite 7928-7939 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 https://doi.org/10.1007/s10854-019-01114-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 8 18 03 7928-7939 |
allfieldsSound |
10.1007/s10854-019-01114-5 doi (DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p DE-627 ger DE-627 rakwb eng 600 670 620 VZ Yao, Lu verfasserin aut Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, LLC, part of Springer Nature 2019 Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. Geng, Hongchao aut Cheng, Runrun aut Cao, Kesheng aut Sheng, Pengtao aut Li, Weili (orcid)0000-0002-8387-6539 aut Li, Songtian aut Enthalten in Journal of materials science / Materials in electronics Springer US, 1990 30(2019), 8 vom: 18. März, Seite 7928-7939 (DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 0957-4522 nnns volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 https://doi.org/10.1007/s10854-019-01114-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 AR 30 2019 8 18 03 7928-7939 |
language |
English |
source |
Enthalten in Journal of materials science / Materials in electronics 30(2019), 8 vom: 18. März, Seite 7928-7939 volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 |
sourceStr |
Enthalten in Journal of materials science / Materials in electronics 30(2019), 8 vom: 18. März, Seite 7928-7939 volume:30 year:2019 number:8 day:18 month:03 pages:7928-7939 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
dewey-raw |
600 |
isfreeaccess_bool |
false |
container_title |
Journal of materials science / Materials in electronics |
authorswithroles_txt_mv |
Yao, Lu @@aut@@ Geng, Hongchao @@aut@@ Cheng, Runrun @@aut@@ Cao, Kesheng @@aut@@ Sheng, Pengtao @@aut@@ Li, Weili @@aut@@ Li, Songtian @@aut@@ |
publishDateDaySort_date |
2019-03-18T00:00:00Z |
hierarchy_top_id |
130863289 |
dewey-sort |
3600 |
id |
OLC2026367752 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026367752</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503131059.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-019-01114-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026367752</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-019-01114-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yao, Lu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Geng, Hongchao</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cheng, Runrun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cao, Kesheng</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sheng, Pengtao</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Weili</subfield><subfield code="0">(orcid)0000-0002-8387-6539</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Songtian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">30(2019), 8 vom: 18. März, Seite 7928-7939</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:30</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:8</subfield><subfield code="g">day:18</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:7928-7939</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-019-01114-5</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">30</subfield><subfield code="j">2019</subfield><subfield code="e">8</subfield><subfield code="b">18</subfield><subfield code="c">03</subfield><subfield code="h">7928-7939</subfield></datafield></record></collection>
|
author |
Yao, Lu |
spellingShingle |
Yao, Lu ddc 600 Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
authorStr |
Yao, Lu |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)130863289 |
format |
Article |
dewey-ones |
600 - Technology 670 - Manufacturing 620 - Engineering & allied operations |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut |
collection |
OLC |
remote_str |
false |
illustrated |
Not Illustrated |
issn |
0957-4522 |
topic_title |
600 670 620 VZ Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
topic |
ddc 600 |
topic_unstemmed |
ddc 600 |
topic_browse |
ddc 600 |
format_facet |
Aufsätze Gedruckte Aufsätze |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
nc |
hierarchy_parent_title |
Journal of materials science / Materials in electronics |
hierarchy_parent_id |
130863289 |
dewey-tens |
600 - Technology 670 - Manufacturing 620 - Engineering |
hierarchy_top_title |
Journal of materials science / Materials in electronics |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)130863289 (DE-600)1030929-9 (DE-576)023106719 |
title |
Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
ctrlnum |
(DE-627)OLC2026367752 (DE-He213)s10854-019-01114-5-p |
title_full |
Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
author_sort |
Yao, Lu |
journal |
Journal of materials science / Materials in electronics |
journalStr |
Journal of materials science / Materials in electronics |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology |
recordtype |
marc |
publishDateSort |
2019 |
contenttype_str_mv |
txt |
container_start_page |
7928 |
author_browse |
Yao, Lu Geng, Hongchao Cheng, Runrun Cao, Kesheng Sheng, Pengtao Li, Weili Li, Songtian |
container_volume |
30 |
class |
600 670 620 VZ |
format_se |
Aufsätze |
author-letter |
Yao, Lu |
doi_str_mv |
10.1007/s10854-019-01114-5 |
normlink |
(ORCID)0000-0002-8387-6539 |
normlink_prefix_str_mv |
(orcid)0000-0002-8387-6539 |
dewey-full |
600 670 620 |
title_sort |
preparation of hybrid photoelectrode based on defect-poor zn-$ cuinse_{2} $ qds sensitized nanoporous zno nanosheets with an application in azo dye removal |
title_auth |
Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
abstract |
Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
abstractGer |
Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
abstract_unstemmed |
Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS. © Springer Science+Business Media, LLC, part of Springer Nature 2019 |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2015 |
container_issue |
8 |
title_short |
Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal |
url |
https://doi.org/10.1007/s10854-019-01114-5 |
remote_bool |
false |
author2 |
Geng, Hongchao Cheng, Runrun Cao, Kesheng Sheng, Pengtao Li, Weili Li, Songtian |
author2Str |
Geng, Hongchao Cheng, Runrun Cao, Kesheng Sheng, Pengtao Li, Weili Li, Songtian |
ppnlink |
130863289 |
mediatype_str_mv |
n |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1007/s10854-019-01114-5 |
up_date |
2024-07-04T03:48:24.132Z |
_version_ |
1803618776925601792 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2026367752</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503131059.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-019-01114-5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2026367752</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s10854-019-01114-5-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yao, Lu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Preparation of hybrid photoelectrode based on defect-poor Zn-$ CuInSe_{2} $ QDs sensitized nanoporous ZnO nanosheets with an application in azo dye removal</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC, part of Springer Nature 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The glutathione (GSH) and mercaptopropionic acid (MPA) modified internal defect-rich, surface defects-poor near infrared (NIR) Zn–$ CuInSe_{2} $ (ZCISe) QDs were synthesized. Nanoporous ZnO nanosheets (NS) were firstly loaded with those ZCISe QDs to improve photoelectrochemical response in the NIR light region. Then loading Mn doping CdS thin film onto the ZCISe/ZnO NS was further used to reduce the interfacial recombination between different components of hybrid photoelectrode, in addition to enhance the light absorption and resist the photo-oxidation decomposition of the photocatalysts. Successively introducing ZCISe and Mn–CdS onto ZnO NS can increase the photocurrent intensities from 1 mA/$ cm^{2} $ for naked ZnO NS, 2.2 mA/$ cm^{2} $ for ZCISe/ZnO NS, to 9 mA/$ cm^{2} $ for Mn–CdS/ZCISe/ZnO NS. Here, excellent performance of ZCISe based ZnO NS photoelectrode is mainly attributed to an intrinsic defect state-related donor–acceptor pair (DAP) in ZCISe QDs with long-lived photogenerated carriers. Photocatalytic properties of Mn–CdS/ZCISe/ZnO NS were evaluated by removing azo dyes with an efficiency of 83%, an enhancement of 97% compared to that of ZnO NS.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Geng, Hongchao</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cheng, Runrun</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cao, Kesheng</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sheng, Pengtao</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Weili</subfield><subfield code="0">(orcid)0000-0002-8387-6539</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Songtian</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science / Materials in electronics</subfield><subfield code="d">Springer US, 1990</subfield><subfield code="g">30(2019), 8 vom: 18. März, Seite 7928-7939</subfield><subfield code="w">(DE-627)130863289</subfield><subfield code="w">(DE-600)1030929-9</subfield><subfield code="w">(DE-576)023106719</subfield><subfield code="x">0957-4522</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:30</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:8</subfield><subfield code="g">day:18</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:7928-7939</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s10854-019-01114-5</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">30</subfield><subfield code="j">2019</subfield><subfield code="e">8</subfield><subfield code="b">18</subfield><subfield code="c">03</subfield><subfield code="h">7928-7939</subfield></datafield></record></collection>
|
score |
7.4018345 |