I, V characteristics of a metal-dielectric-semiconductor system
Gespeichert in:
| Autor*in: |
Gaman, V. I. [verfasserIn] Bazarov, V. D. [verfasserIn] Reznikov, V. A. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1969 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - New York, NY [u.a.] : Consultants Bureau, 1992, 12(1969), 2 vom: Feb., Seite 145-148 |
|---|---|
| Übergeordnetes Werk: |
volume:12 ; year:1969 ; number:2 ; month:02 ; pages:145-148 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF00819304 |
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OLC2032960192 |
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10.1007/BF00819304 doi (DE-627)OLC2032960192 (DE-He213)BF00819304-p DE-627 ger DE-627 rakwb eng 530 AVZ Gaman, V. I. verfasserin aut I, V characteristics of a metal-dielectric-semiconductor system 1969 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Germanium (dpeaa)DE-He213 Versus Characteristic (dpeaa)DE-He213 Chalcogenide Glass (dpeaa)DE-He213 Switching Process (dpeaa)DE-He213 Germanium System (dpeaa)DE-He213 Bazarov, V. D. verfasserin aut Reznikov, V. A. verfasserin aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1992 12(1969), 2 vom: Feb., Seite 145-148 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:12 year:1969 number:2 month:02 pages:145-148 https://doi.org/10.1007/BF00819304 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 12 1969 2 02 145-148 |
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10.1007/BF00819304 doi (DE-627)OLC2032960192 (DE-He213)BF00819304-p DE-627 ger DE-627 rakwb eng 530 AVZ Gaman, V. I. verfasserin aut I, V characteristics of a metal-dielectric-semiconductor system 1969 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Germanium (dpeaa)DE-He213 Versus Characteristic (dpeaa)DE-He213 Chalcogenide Glass (dpeaa)DE-He213 Switching Process (dpeaa)DE-He213 Germanium System (dpeaa)DE-He213 Bazarov, V. D. verfasserin aut Reznikov, V. A. verfasserin aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1992 12(1969), 2 vom: Feb., Seite 145-148 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:12 year:1969 number:2 month:02 pages:145-148 https://doi.org/10.1007/BF00819304 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 12 1969 2 02 145-148 |
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10.1007/BF00819304 doi (DE-627)OLC2032960192 (DE-He213)BF00819304-p DE-627 ger DE-627 rakwb eng 530 AVZ Gaman, V. I. verfasserin aut I, V characteristics of a metal-dielectric-semiconductor system 1969 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Germanium (dpeaa)DE-He213 Versus Characteristic (dpeaa)DE-He213 Chalcogenide Glass (dpeaa)DE-He213 Switching Process (dpeaa)DE-He213 Germanium System (dpeaa)DE-He213 Bazarov, V. D. verfasserin aut Reznikov, V. A. verfasserin aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1992 12(1969), 2 vom: Feb., Seite 145-148 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:12 year:1969 number:2 month:02 pages:145-148 https://doi.org/10.1007/BF00819304 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 12 1969 2 02 145-148 |
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10.1007/BF00819304 doi (DE-627)OLC2032960192 (DE-He213)BF00819304-p DE-627 ger DE-627 rakwb eng 530 AVZ Gaman, V. I. verfasserin aut I, V characteristics of a metal-dielectric-semiconductor system 1969 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Germanium (dpeaa)DE-He213 Versus Characteristic (dpeaa)DE-He213 Chalcogenide Glass (dpeaa)DE-He213 Switching Process (dpeaa)DE-He213 Germanium System (dpeaa)DE-He213 Bazarov, V. D. verfasserin aut Reznikov, V. A. verfasserin aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1992 12(1969), 2 vom: Feb., Seite 145-148 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:12 year:1969 number:2 month:02 pages:145-148 https://doi.org/10.1007/BF00819304 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 12 1969 2 02 145-148 |
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10.1007/BF00819304 doi (DE-627)OLC2032960192 (DE-He213)BF00819304-p DE-627 ger DE-627 rakwb eng 530 AVZ Gaman, V. I. verfasserin aut I, V characteristics of a metal-dielectric-semiconductor system 1969 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Germanium (dpeaa)DE-He213 Versus Characteristic (dpeaa)DE-He213 Chalcogenide Glass (dpeaa)DE-He213 Switching Process (dpeaa)DE-He213 Germanium System (dpeaa)DE-He213 Bazarov, V. D. verfasserin aut Reznikov, V. A. verfasserin aut Enthalten in Russian physics journal New York, NY [u.a.] : Consultants Bureau, 1992 12(1969), 2 vom: Feb., Seite 145-148 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:12 year:1969 number:2 month:02 pages:145-148 https://doi.org/10.1007/BF00819304 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY AR 12 1969 2 02 145-148 |
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