Kink instability of the semiconductor plasma in silicon parallelepipeds
Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gaman, V. I. [verfasserIn] |
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| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 1992 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Kluwer Academic Publishers-Plenum Publishers, 1992, 35(1992), 5 vom: Mai, Seite 481-486 |
|---|---|
| Übergeordnetes Werk: |
volume:35 ; year:1992 ; number:5 ; month:05 ; pages:481-486 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF00558864 |
|---|
| Katalog-ID: |
OLC2033038610 |
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| 520 | |a Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. | ||
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| 700 | 1 | |a Karlova, G. F. |4 aut | |
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10.1007/BF00558864 doi (DE-627)OLC2033038610 (DE-He213)BF00558864-p DE-627 ger DE-627 rakwb eng 530 370 VZ Gaman, V. I. verfasserin aut Kink instability of the semiconductor plasma in silicon parallelepipeds 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1992 Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. Silicon Test Sample Magnetic Induction Excitation Threshold Threshold Curve Drobot, P. N. aut Karlova, G. F. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 5 vom: Mai, Seite 481-486 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:5 month:05 pages:481-486 https://doi.org/10.1007/BF00558864 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 5 05 481-486 |
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10.1007/BF00558864 doi (DE-627)OLC2033038610 (DE-He213)BF00558864-p DE-627 ger DE-627 rakwb eng 530 370 VZ Gaman, V. I. verfasserin aut Kink instability of the semiconductor plasma in silicon parallelepipeds 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1992 Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. Silicon Test Sample Magnetic Induction Excitation Threshold Threshold Curve Drobot, P. N. aut Karlova, G. F. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 5 vom: Mai, Seite 481-486 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:5 month:05 pages:481-486 https://doi.org/10.1007/BF00558864 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 5 05 481-486 |
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10.1007/BF00558864 doi (DE-627)OLC2033038610 (DE-He213)BF00558864-p DE-627 ger DE-627 rakwb eng 530 370 VZ Gaman, V. I. verfasserin aut Kink instability of the semiconductor plasma in silicon parallelepipeds 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1992 Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. Silicon Test Sample Magnetic Induction Excitation Threshold Threshold Curve Drobot, P. N. aut Karlova, G. F. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 5 vom: Mai, Seite 481-486 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:5 month:05 pages:481-486 https://doi.org/10.1007/BF00558864 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 5 05 481-486 |
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10.1007/BF00558864 doi (DE-627)OLC2033038610 (DE-He213)BF00558864-p DE-627 ger DE-627 rakwb eng 530 370 VZ Gaman, V. I. verfasserin aut Kink instability of the semiconductor plasma in silicon parallelepipeds 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1992 Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. Silicon Test Sample Magnetic Induction Excitation Threshold Threshold Curve Drobot, P. N. aut Karlova, G. F. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 5 vom: Mai, Seite 481-486 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:5 month:05 pages:481-486 https://doi.org/10.1007/BF00558864 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 5 05 481-486 |
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10.1007/BF00558864 doi (DE-627)OLC2033038610 (DE-He213)BF00558864-p DE-627 ger DE-627 rakwb eng 530 370 VZ Gaman, V. I. verfasserin aut Kink instability of the semiconductor plasma in silicon parallelepipeds 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1992 Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. Silicon Test Sample Magnetic Induction Excitation Threshold Threshold Curve Drobot, P. N. aut Karlova, G. F. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 5 vom: Mai, Seite 481-486 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:5 month:05 pages:481-486 https://doi.org/10.1007/BF00558864 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 5 05 481-486 |
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Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. © Plenum Publishing Corporation 1992 |
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Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. © Plenum Publishing Corporation 1992 |
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Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold. © Plenum Publishing Corporation 1992 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2033038610</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504035614.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1992 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF00558864</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2033038610</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF00558864-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="a">370</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gaman, V. I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Kink instability of the semiconductor plasma in silicon parallelepipeds</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Plenum Publishing Corporation 1992</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Experimental results on the onset of the kink instability of the semiconductor plasma in silicon $ p^{+} $-p-$ n^{+} $ structures are analyzed. The structures were parallelepipeds. The experiments were carried out over the temperature range from 77 to 300 K. The shape of the current-voltage characteristics and that of the threshold curves of the test samples are discussed. The frequency and amplitude of the alternating current which arises as a result of the kink instability are described as a function of the electric field and the magnetic induction at levels substantially above the excitation threshold.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Test Sample</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetic Induction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Excitation Threshold</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Threshold Curve</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Drobot, P. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Karlova, G. F.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian physics journal</subfield><subfield code="d">Kluwer Academic Publishers-Plenum Publishers, 1992</subfield><subfield code="g">35(1992), 5 vom: Mai, Seite 481-486</subfield><subfield code="w">(DE-627)131169718</subfield><subfield code="w">(DE-600)1138228-4</subfield><subfield code="w">(DE-576)033029253</subfield><subfield code="x">1064-8887</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:35</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:5</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:481-486</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF00558864</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">35</subfield><subfield code="j">1992</subfield><subfield code="e">5</subfield><subfield code="c">05</subfield><subfield code="h">481-486</subfield></datafield></record></collection>
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