Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions
Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the Ga...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Brudnyi, V. N. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1992 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 1993 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Kluwer Academic Publishers-Plenum Publishers, 1992, 35(1992), 10 vom: Okt., Seite 943-946 |
|---|---|
| Übergeordnetes Werk: |
volume:35 ; year:1992 ; number:10 ; month:10 ; pages:943-946 |
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| DOI / URN: |
10.1007/BF00559890 |
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| 520 | |a Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. | ||
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10.1007/BF00559890 doi (DE-627)OLC2033039536 (DE-He213)BF00559890-p DE-627 ger DE-627 rakwb eng 530 370 VZ Brudnyi, V. N. verfasserin aut Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. GaAs Electrophysical Property Electrophysical Characteristic Kolin, N. G. aut Potapov, A. I. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 10 vom: Okt., Seite 943-946 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:10 month:10 pages:943-946 https://doi.org/10.1007/BF00559890 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 10 10 943-946 |
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10.1007/BF00559890 doi (DE-627)OLC2033039536 (DE-He213)BF00559890-p DE-627 ger DE-627 rakwb eng 530 370 VZ Brudnyi, V. N. verfasserin aut Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. GaAs Electrophysical Property Electrophysical Characteristic Kolin, N. G. aut Potapov, A. I. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 10 vom: Okt., Seite 943-946 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:10 month:10 pages:943-946 https://doi.org/10.1007/BF00559890 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 10 10 943-946 |
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10.1007/BF00559890 doi (DE-627)OLC2033039536 (DE-He213)BF00559890-p DE-627 ger DE-627 rakwb eng 530 370 VZ Brudnyi, V. N. verfasserin aut Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. GaAs Electrophysical Property Electrophysical Characteristic Kolin, N. G. aut Potapov, A. I. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 10 vom: Okt., Seite 943-946 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:10 month:10 pages:943-946 https://doi.org/10.1007/BF00559890 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 10 10 943-946 |
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10.1007/BF00559890 doi (DE-627)OLC2033039536 (DE-He213)BF00559890-p DE-627 ger DE-627 rakwb eng 530 370 VZ Brudnyi, V. N. verfasserin aut Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. GaAs Electrophysical Property Electrophysical Characteristic Kolin, N. G. aut Potapov, A. I. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 10 vom: Okt., Seite 943-946 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:10 month:10 pages:943-946 https://doi.org/10.1007/BF00559890 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 10 10 943-946 |
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10.1007/BF00559890 doi (DE-627)OLC2033039536 (DE-He213)BF00559890-p DE-627 ger DE-627 rakwb eng 530 370 VZ Brudnyi, V. N. verfasserin aut Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 1993 Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. GaAs Electrophysical Property Electrophysical Characteristic Kolin, N. G. aut Potapov, A. I. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 35(1992), 10 vom: Okt., Seite 943-946 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:35 year:1992 number:10 month:10 pages:943-946 https://doi.org/10.1007/BF00559890 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4027 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4700 AR 35 1992 10 10 943-946 |
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Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions |
| abstract |
Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. © Plenum Publishing Corporation 1993 |
| abstractGer |
Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. © Plenum Publishing Corporation 1993 |
| abstract_unstemmed |
Abstract A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by $ H^{+} $ ions at fluxes of up to 1.5·$ 10^{16} $ $ cm^{−2} $. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton “insulation” GaAs. © Plenum Publishing Corporation 1993 |
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Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by $ H^{+} $ ions |
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Kolin, N. G. Potapov, A. I. |
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