Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer
Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method.
Gespeichert in:
| Autor*in: |
Voitsekhovskii, A. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2001 |
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| Schlagwörter: |
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| Anmerkung: |
© Plenum Publishing Corporation 2001 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Kluwer Academic Publishers-Plenum Publishers, 1992, 44(2001), 11 vom: Nov., Seite 1139-1151 |
|---|---|
| Übergeordnetes Werk: |
volume:44 ; year:2001 ; number:11 ; month:11 ; pages:1139-1151 |
| Links: |
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| DOI / URN: |
10.1023/A:1015393305423 |
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OLC2033057518 |
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| 520 | |a Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. | ||
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| 700 | 1 | |a Lyapunov, S. I. |4 aut | |
| 700 | 1 | |a Komarov, N. V. |4 aut | |
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10.1023/A:1015393305423 doi (DE-627)OLC2033057518 (DE-He213)A:1015393305423-p DE-627 ger DE-627 rakwb eng 530 370 VZ Voitsekhovskii, A. V. verfasserin aut Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. Silicon Platinum Surface Layer Noise Characteristic Photoelectric Property Kokhanenko, A. P. aut Nesmelov, S. N. aut Lyapunov, S. I. aut Komarov, N. V. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 44(2001), 11 vom: Nov., Seite 1139-1151 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:44 year:2001 number:11 month:11 pages:1139-1151 https://doi.org/10.1023/A:1015393305423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4700 AR 44 2001 11 11 1139-1151 |
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10.1023/A:1015393305423 doi (DE-627)OLC2033057518 (DE-He213)A:1015393305423-p DE-627 ger DE-627 rakwb eng 530 370 VZ Voitsekhovskii, A. V. verfasserin aut Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. Silicon Platinum Surface Layer Noise Characteristic Photoelectric Property Kokhanenko, A. P. aut Nesmelov, S. N. aut Lyapunov, S. I. aut Komarov, N. V. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 44(2001), 11 vom: Nov., Seite 1139-1151 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:44 year:2001 number:11 month:11 pages:1139-1151 https://doi.org/10.1023/A:1015393305423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4700 AR 44 2001 11 11 1139-1151 |
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10.1023/A:1015393305423 doi (DE-627)OLC2033057518 (DE-He213)A:1015393305423-p DE-627 ger DE-627 rakwb eng 530 370 VZ Voitsekhovskii, A. V. verfasserin aut Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. Silicon Platinum Surface Layer Noise Characteristic Photoelectric Property Kokhanenko, A. P. aut Nesmelov, S. N. aut Lyapunov, S. I. aut Komarov, N. V. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 44(2001), 11 vom: Nov., Seite 1139-1151 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:44 year:2001 number:11 month:11 pages:1139-1151 https://doi.org/10.1023/A:1015393305423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4700 AR 44 2001 11 11 1139-1151 |
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10.1023/A:1015393305423 doi (DE-627)OLC2033057518 (DE-He213)A:1015393305423-p DE-627 ger DE-627 rakwb eng 530 370 VZ Voitsekhovskii, A. V. verfasserin aut Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Plenum Publishing Corporation 2001 Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. Silicon Platinum Surface Layer Noise Characteristic Photoelectric Property Kokhanenko, A. P. aut Nesmelov, S. N. aut Lyapunov, S. I. aut Komarov, N. V. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Plenum Publishers, 1992 44(2001), 11 vom: Nov., Seite 1139-1151 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:44 year:2001 number:11 month:11 pages:1139-1151 https://doi.org/10.1023/A:1015393305423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2021 GBV_ILN_4700 AR 44 2001 11 11 1139-1151 |
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Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer |
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Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. © Plenum Publishing Corporation 2001 |
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Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. © Plenum Publishing Corporation 2001 |
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Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method. © Plenum Publishing Corporation 2001 |
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V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Photoelectric Properties of Photodetectors Based on Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2001</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Plenum Publishing Corporation 2001</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have calculated the spectral, threshold, and noise characteristics of p-Si–PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse ion implantation by a recoil method.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Platinum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface Layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise Characteristic</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoelectric Property</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kokhanenko, A. 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