Effect of electron irradiation on InSb microcrystals
Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed.
Gespeichert in:
| Autor*in: |
Bolshakova, A. [verfasserIn] |
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Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, Inc. 2006 |
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| Übergeordnetes Werk: |
Enthalten in: Russian physics journal - Kluwer Academic Publishers-Consultants Bureau, 1992, 49(2006), 2 vom: Feb., Seite 166-169 |
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| Übergeordnetes Werk: |
volume:49 ; year:2006 ; number:2 ; month:02 ; pages:166-169 |
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| DOI / URN: |
10.1007/s11182-006-0082-0 |
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OLC2033065820 |
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| 520 | |a Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. | ||
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| 700 | 1 | |a Megela, I. G. |4 aut | |
| 700 | 1 | |a Moskovets, T. A. |4 aut | |
| 700 | 1 | |a Shurygin, F. M. |4 aut | |
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10.1007/s11182-006-0082-0 doi (DE-627)OLC2033065820 (DE-He213)s11182-006-0082-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Bolshakova, A. verfasserin aut Effect of electron irradiation on InSb microcrystals 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, Inc. 2006 Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. InSb Electron Irradiation Electrophysical Property Compensation Factor Electrophysical Parameter Makido, E. Yu. aut Maslyuk, V. T. aut Megela, I. G. aut Moskovets, T. A. aut Shurygin, F. M. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Consultants Bureau, 1992 49(2006), 2 vom: Feb., Seite 166-169 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:49 year:2006 number:2 month:02 pages:166-169 https://doi.org/10.1007/s11182-006-0082-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 AR 49 2006 2 02 166-169 |
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10.1007/s11182-006-0082-0 doi (DE-627)OLC2033065820 (DE-He213)s11182-006-0082-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Bolshakova, A. verfasserin aut Effect of electron irradiation on InSb microcrystals 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, Inc. 2006 Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. InSb Electron Irradiation Electrophysical Property Compensation Factor Electrophysical Parameter Makido, E. Yu. aut Maslyuk, V. T. aut Megela, I. G. aut Moskovets, T. A. aut Shurygin, F. M. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Consultants Bureau, 1992 49(2006), 2 vom: Feb., Seite 166-169 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:49 year:2006 number:2 month:02 pages:166-169 https://doi.org/10.1007/s11182-006-0082-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 AR 49 2006 2 02 166-169 |
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10.1007/s11182-006-0082-0 doi (DE-627)OLC2033065820 (DE-He213)s11182-006-0082-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Bolshakova, A. verfasserin aut Effect of electron irradiation on InSb microcrystals 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, Inc. 2006 Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. InSb Electron Irradiation Electrophysical Property Compensation Factor Electrophysical Parameter Makido, E. Yu. aut Maslyuk, V. T. aut Megela, I. G. aut Moskovets, T. A. aut Shurygin, F. M. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Consultants Bureau, 1992 49(2006), 2 vom: Feb., Seite 166-169 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:49 year:2006 number:2 month:02 pages:166-169 https://doi.org/10.1007/s11182-006-0082-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 AR 49 2006 2 02 166-169 |
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10.1007/s11182-006-0082-0 doi (DE-627)OLC2033065820 (DE-He213)s11182-006-0082-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Bolshakova, A. verfasserin aut Effect of electron irradiation on InSb microcrystals 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, Inc. 2006 Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. InSb Electron Irradiation Electrophysical Property Compensation Factor Electrophysical Parameter Makido, E. Yu. aut Maslyuk, V. T. aut Megela, I. G. aut Moskovets, T. A. aut Shurygin, F. M. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Consultants Bureau, 1992 49(2006), 2 vom: Feb., Seite 166-169 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:49 year:2006 number:2 month:02 pages:166-169 https://doi.org/10.1007/s11182-006-0082-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 AR 49 2006 2 02 166-169 |
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10.1007/s11182-006-0082-0 doi (DE-627)OLC2033065820 (DE-He213)s11182-006-0082-0-p DE-627 ger DE-627 rakwb eng 530 370 VZ Bolshakova, A. verfasserin aut Effect of electron irradiation on InSb microcrystals 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media, Inc. 2006 Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. InSb Electron Irradiation Electrophysical Property Compensation Factor Electrophysical Parameter Makido, E. Yu. aut Maslyuk, V. T. aut Megela, I. G. aut Moskovets, T. A. aut Shurygin, F. M. aut Enthalten in Russian physics journal Kluwer Academic Publishers-Consultants Bureau, 1992 49(2006), 2 vom: Feb., Seite 166-169 (DE-627)131169718 (DE-600)1138228-4 (DE-576)033029253 1064-8887 nnns volume:49 year:2006 number:2 month:02 pages:166-169 https://doi.org/10.1007/s11182-006-0082-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 AR 49 2006 2 02 166-169 |
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Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. © Springer Science+Business Media, Inc. 2006 |
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Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. © Springer Science+Business Media, Inc. 2006 |
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Abstract The results of experimental studies of electrophysical properties of heavily doped n-InSb whiskers exposed to electron irradiation (13 MeV, 300 K) are reported. The limiting electrophysical parameters and the problem of the Fermi-level pinning in irradiated InSb are discussed. © Springer Science+Business Media, Inc. 2006 |
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